arXiv subjects

P. Nemec

Publications and source records attributed to P. Nemec.

At least 19 recordsLinked to original sources

arXiv2026

Disentangling magnetic and optical contributions in ultrafast dynamics of antiperovskite non-collinear antiferromagnets

Non-collinear antiferromagnets are a class of spin-polarized antiferromagnets in which chiral spin textures give rise to Berry-curvature-driven phenomena, such as the anomalous Hall effect (AHE), without net magnetization. We investigate the properties of thin films of antiperovskite non-collinear antiferromagnetic metals Mn3NiN and Mn3GaN using pump-probe experiments. In both materials, we observe a strong dependence of pump-polarization-independent dynamics, induced by femtosecond laser pulses, on the angle between the sample normal and the direction of probe propagation. In Mn3NiN, where the presence of a sizable AHE indicates the {\Gamma}4g phase, the measured magnetooptical (MO) signals acquire an additional, strong dependence on the external magnetic field when the probe pulses are incident at nonzero angles. In contrast, in Mn3GaN, where the absence of AHE indicates the {\Gamma}5g phase, the measured signals do not depend on the magnetic field. Using probe-polarization-resolved measurements combined with full optical modeling based on Yeh's formalism, we quantitatively separate magnetic and non-magnetic contributions to the measured signals. We show that in Mn3NiN, the observed magnetic field dependence results from field-controlled redistribution of magnetic domain populations, enabled by their piezomagnetic moments and detected by a Kerr-like MO effect, while this effect is absent in Mn3GaN. Temperature-dependent measurements reveal a change from single-step to two-step quenching dynamics with increasing temperature in Mn3NiN. This behavior contrasts with the nearly temperature-independent quenching dynamics reported for the non-collinear antiferromagnetic Heusler compound Mn3Sn, but resembles the crossover from type-I to type-II demagnetization dynamics in metallic ferromagnets.

cond-mat.mtrl-sci↗

arXiv2026

Ultrafast control of spin order by linearly polarized light in noncollinear antiferromagnetic metals

The non-thermal optical control of magnetic order offers a promising route to ultrafast, energy-efficient information technologies. Although optical manipulation of magnetism in metals has been extensively studied, experimentally demonstrated effects have so far been limited to heat-driven dynamics or helicity-dependent mechanisms. Here, we report ultrafast non-thermal control of spin order in noncollinear antiferromagnetic Mn-based antiperovskite nitrides Mn3NiN and Mn3GaN, driven solely by the polarization orientation of linearly polarized femtosecond laser pulses. Using time-resolved magneto-optical pump-probe experiments based on the Voigt effect, we observe sub-picosecond changes in magnetic order followed by picosecond relaxation. The magneto-optical response depends on the relative orientation of the pump and probe polarization planes, with linear-polarization dependence reaching up to 95%, a value unprecedented in metallic magnets. This phenomenon is observed in two different materials and persists over a wide range of excitation wavelengths, fluences, and temperatures, demonstrating its robustness. Symmetry analysis and microscopic modeling indicate that optically induced torques alone cannot fully explain the observed dynamics. We therefore propose laser-induced formation of transient spin-spiral states as a possible excitation mechanism.

cond-mat.mtrl-sci↗

arXiv2025

Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory

Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses generated by the absorption of femtosecond laser pulses at room ambient temperature. When a threshold temperature in the heat-based short-term memory of the device is exceeded, the output of the in-memory logic operations is transferred within the same device to a long-term memory, where it can be retrieved at macroscopic times. The long-term memory is based on magnetoresistive switching from a reference low-resistive uniform magnetic state to high-resistive metastable nanofragmented magnetic states. The in-memory heat-based logic operations and the conversion of the outputs into the electrically-readable long-term magnetoresistive memory were performed at sub-nanosecond time scales, making them compatible with the GHz frequencies of standard electronics. Finally, we demonstrate the possibility of rapidly resetting the long-term memory to the reference low-resistive state by heat pulses.

cond-mat.mtrl-sci↗

arXiv2024

Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device

Previous experiments in compensated magnets have demonstrated a potential for approaching the limit of fastest and least-dissipative operation of digital memory bits. However, the analog route has been virtually unexplored at (sub)ps time scales. In this paper, we report on experimental separation of heat-related and quench-switching-related resistance signal dynamics induced at room temperature by a single femtosecond-laser-pulse in memory devices made from a metallic antiferromagnetic CuMnAs. We show that the heat-related dynamics, on picosecond to hundreds of nanoseconds time scales, can be used as a short-term memory where information about input stimuli, represented by laser-pulses, is stored temporarily. When the quench-switching threshold is reached, information is transferred to the device's variable resistance, serving as a long-term memory, with time components of 10 ms and 10 s. The potentially appealing features of the heat-based memory for several distinct research fields, including bio-inspired analogue devices and heat-based logic, are also discussed.

cond-mat.mtrl-sci↗

arXiv2022

Ultrashort spin-orbit torque generated by femtosecond laser pulses

To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed is limited by the Larmor precession frequency. Understanding the magnetization precession dynamics induced by spin-orbit torques (SOTs) is therefore of great importance. Here we demonstrate generation of ultrashort SOT pulses that excite Larmor precession at an epitaxial Fe/GaAs interface by converting femtosecond laser pulses into high-amplitude current pulses in an electrically biased p-i-n photodiode. We control the polarity, amplitude, and duration of the current pulses and, most importantly, also their propagation direction with respect to the crystal orientation. The SOT origin of the excited Larmor precession was revealed by a detailed analysis of the precession phase and amplitude at different experimental conditions.

cond-mat.mtrl-sci↗

arXiv2020

Investigation of Magnetic Anisotropy and Heat Dissipation in Thin Films of Compensated Antiferromagnet CuMnAs by Pump-probe Experiment

We recently reported on a method to determine the easy axis position in a 10 nm thick film of the fully compensated antiferromagnet CuMnAs. The film had a uniaxial magnetic anisotropy and the technique utilized a magneto-optical pump and probe experiment [Nature Photonics 11, 91 (2017)]. In this contribution we discuss the applicability of this method for the investigation of a broader set of epitaxial CuMnAs films having different thicknesses. This work reveals that the equilibrium magnetic anisotropy can be studied only in samples where this anisotropy is rather strong. However, in the majority of CuMnAs films, the impact of a strong pump pulse induces nano-fragmentation of the magnetic domains and, therefore, the magnetic anisotropy measured by the pump-probe technique differs substantially from that in the equilibrium conditions. We also demonstrate that optical pump-probe experiment can be used very efficiently to study the local heating and heat dissipation in CuMnAs epitaxial layers. In particular, we determined the electron-phonon relaxation time in CuMnAs. We also observed that for a local film heating by a focused laser the thinner films are heated more, but the heat is dissipated considerably faster than in the case of thicker films. This illustrates that the optical pump-probe experiment is a valuable characterization tool for the heat management optimization in the CuMnAs memory devices and can be applied in a similar way to those used during heat-assisted magnetic recording (HAMR) technology development for the latest generation of hard drive disks.

cond-mat.mtrl-sci↗

arXiv2020

Quasi-nondegenerate pump-probe magnetooptical experiment in GaAs/AlGaAs heterostructure based on spectral filtration

We report on a quasi-nondegenerate pump-probe technique that is based on spectral-filtration of femtosecond laser pulses by a pair of mutually-spectrally-disjunctive interference filters. This cost- and space-efficient approach can be used even in pump-probe microscopy where collinear propagation of pump and probe pulses is dictated by utilization of a microscopic objective. This technique solves the contradictory requirements on an efficient removal of pump photons from the probe beam, to achieve a good signal-to-noise ratio, simultaneously with a needed spectral proximity of the excitation and probing, which is essential for magnetooptical study of many material systems. Importantly, this spectral-filtration of 100 fs long laser pulses does not affect considerably the resulting time-resolution, which remains well below 500 fs. We demonstrate the practical applicability of this technique with close but distinct wavelengths of pump and probe pulses in spatially- and time-resolved spin-sensitive magnetooptical Kerr effect (MOKE) experiment in GaAs/AlGaAs heterostructure, where a high-mobility spin system is formed after optical injection of electrons at wavelengths close to MOKE resonance. In particular, we studied the time- and spatial-evolutions of charge-related (reflectivity) and spin-related (MOKE) signals. We revealed that they evolve in a similar but not exactly the same way which we attributed to interplay of several electron many-body effects in GaAs.

cond-mat.mtrl-sci↗

arXiv2018

Voigt effect-based wide-field magneto-optical microscope integrated in a pump-probe experimental setup

In this work we describe an experimental setup for spatially-resolved pump-probe experiment with integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using an in-plane magnetized ferromagnetic semiconductor (Ga,Mn)As. It was revealed that the presence of mechanical defects in the (Ga,Mn)As epilayer alters significantly the magnetic anisotropy in their proximity. The importance of MO experiments with simultaneous temporal and spatial resolutions was demonstrated using (Ga,Mn)As sample attached to a piezoelectric actuator, which produces a voltage-controlled strain. We observed a considerably different behavior in different parts of the sample that enabled us to identify sample parts where the epilayer magnetic anisotropy was significantly modified by a presence of the piezostressor and where it was not. Finally, we discuss the possible applicability of our experimental setup for the research of compensated antiferromagnets, where only MO effects even in magnetic moments are present.

cond-mat.mtrl-sci↗

arXiv2017

THz electrical writing speed in an antiferromagnetic memory

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band.

physics.app-ph↗

arXiv2017

Antiferromagnetic opto-spintronics: Part of a collection of reviews on antiferromagnetic spintronics

Control and detection of spin order in ferromagnets is the main principle allowing storing and reading of magnetic information in nowadays technology. The large class of antiferromagnets, on the other hand, is less utilized, despite its very appealing features for spintronics applications. For instance, the absence of net magnetization and stray fields eliminates crosstalk between neighbouring devices and the absence of a primary macroscopic magnetization makes spin manipulation in antiferromagnets inherently faster than in ferromagnets. However, control of spins in antiferromagnets requires exceedingly high magnetic fields, and antiferromagnetic order cannot be detected with conventional magnetometry. Here we provide an overview and illustrative examples of how electromagnetic radiation can be used for probing and modification of the magnetic order in antiferromagnets. Spin pumping from antiferromagnets, propagation of terahertz spin excitations, and tracing the reversal of the antiferromagnetic and ferroelectric order parameter in multiferroics are anticipated to be among the main topics defining the future of this field.

cond-mat.mtrl-sci↗

arXiv2017

Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films

Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which is antiparallel to the Fe magnetization. The staggered magnetization of the 5nm thick CuMnAs layer is rotatable under small magnetic fields, due to the interlayer exchange coupling. This allows us to obtain the x-ray magnetic linear dichroism spectra for different crystalline orientations of CuMnAs in the (001) plane.

cond-mat.mes-hall↗

arXiv2016

Optical determination of the Neel vector in a CuMnAs thin-film antiferromagnet

Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets notoriously difficult to study by common magnetometers or magnetic resonance techniques. In this paper we demonstrate the experimental determination of the Neel vector in a thin film of antiferromagnetic CuMnAs which is the prominent material used in the first realization of antiferromagnetic memory chips. We employ a femtosecond pump-probe magneto-optical experiment based on magnetic linear dichroism. This table-top optical method is considerably more accessible than the traditionally employed large scale facility techniques like neutron diffraction and X-ray magnetic dichroism measurements. This optical technique allows an unambiguous direct determination of the Neel vector orientation in thin antiferromagnetic films utilized in devices directly from measured data without fitting to a theoretical model.

cond-mat.mtrl-sci↗

arXiv2016

Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses

Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optical spin transfer torque acts over a picosecond recombination time of the spin polarized photo-carriers which only leads to a deformation of the internal domain wall structure. We show that subsequent depinning and micro-meter distance displacement without an applied magnetic field or any other external stimuli can only occur due to the inertia of the domain wall.

cond-mat.mes-hall↗

arXiv2015

Optical investigation of magneto-structural phase transition in FeRh

Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in FeRh films with thicknesses from 6 to 100 nm and it was observed that the hysteretic transition region broadens significantly in the thinner films.

cond-mat.mtrl-sci↗

arXiv2015

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states which we set by heat-assisted magneto-recording and by changing the angle of the writing field. We explore the dependence of the magnitude of the zero-field read-out signal on the strength of the writing field and demonstrate the robustness of the antiferromagnetic memory states against strong magnetic field perturbations. We ascribe the multiple-stability in our antiferromagnetic memory to different distributions of domains with the Néel vector aligned along one of the three $c$-plane magnetic easy axes in the hexagonal MnTe film. The domain redistribution is controlled during the heat-assisted recording by the strength and angle of the writing field and freezes when sufficiently below the Néel temperature.

cond-mat.mtrl-sci↗

arXiv2014

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat.

cond-mat.mtrl-sci↗

arXiv2014

Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession damping is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode.

cond-mat.mtrl-sci↗

arXiv2013

Critical role of the sample preparation in experiments using piezoelectric actuators inducing uniaxial or biaxial strains

We report on a systematic study of the stress transferred from an electromechanical piezo-stack into GaAs wafers under a wide variety of experimental conditions. We show that the strains in the semiconductor lattice, which were monitored in situ by means of X-ray diffraction, are strongly dependent on both the wafer thickness and on the selection of the glue which is used to bond the wafer to the piezoelectric actuator. We have identified an optimal set of parameters that reproducibly transfers the largest distortions at room temperature. We have studied strains produced not only by the frequently used uniaxial piezostressors but also by the biaxial ones which replicate the routinely performed experiments using substrate-induced strains but with the advantage of a continuously tunable lattice distortion. The time evolution of the strain response and the sample tilting and/or bending are also analyzed and discussed.

cond-mat.mtrl-sci↗