arXiv subjects

P. Olivero

Publications and source records attributed to P. Olivero.

63 records · Page 4Linked to original sources

arXiv2014

Beating Abbe diffraction limit in confocal microscopy via non-classical photon statistics

We experimentally demonstrate quantum enhanced resolution in confocal fluorescence microscopy exploiting the non-classical photon statistics of single nitrogen-vacancy colour centres in diamond. By developing a general model of super-resolution based on the direct sampling of the kth-order autocorrelation function of the photoluminescence signal, we show the possibility, in some cases, to resolve in principle arbitrarily close emitting centers.

quant-ph↗

arXiv2014

Native NIR-emitting single colour centres in CVD diamond

Single-photon sources are a fundamental element for developing quantum technologies, and sources based on colour centres in diamonds are among the most promising candidates. The well-known NV centres are characterized by several limitations, thus few other defects have recently been considered. In the present work, we characterize in detail native efficient single colour centres emitting in the near infra-red in both standard IIa single-crystal and electronic-grade polycrystalline commercial CVD diamond samples. In the former case, a high-temperature annealing process in vacuum is necessary to induce the formation/activation of luminescent centres with good emission properties, while in the latter case the annealing process has marginal beneficial effects on the number and performances of native centres in commercially available samples. Although displaying significant variability in several photo physical properties (emission wavelength, emission rate instabilities, saturation behaviours), these centres generally display appealing photophysical properties for applications as single photon sources: short lifetimes, high emission rates and strongly polarized light. The native centres are tentatively attributed to impurities incorporated in the diamond crystal during the CVD growth of high-quality type IIa samples, and offer promising perspectives in diamond-based photonics.

cond-mat.mtrl-sci↗

arXiv2013

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of the device to ionizing radiation. This latter effect has recently attracted attention in commonly used detector materials, but different interpretations have been suggested, depending on the material, the geometry of the device and the nature of the ionizing radiation. In this letter, we report on the investigation in the formation of anomalous polarity pulses in a multi-electrode diamond detector with buried graphitic electrodes. In particular, we propose a purely electrostatic model based on the Shockley-Ramo-Gunn theory, providing a satisfactory description of anomalous pulses observed in charge collection efficiency maps measured by means of Ion Beam Induced Charge (IBIC) microscopy, and suitable for a general application in multi-electrode devices and detectors.

cond-mat.mtrl-sci↗

arXiv2013

Systematic study of defect-related quenching of NV luminescence in diamond with time correlated single photon counting spectroscopy

We report on the systematic characterization of photoluminescence (PL) lifetimes in NV- and NV0 centers in 2 MeV H+ implanted type Ib diamond samples by means of a time correlated single photon counting (TCSPC) microscopy technique. A dipole-dipole resonant energy transfer model was applied to interpret the experimental results, allowing a quantitative correlation of the concentration of both native (single substitutional nitrogen atoms) and ion-induced (isolated vacancies) PL-quenching defects with the measured PL lifetimes. The TCSPC measurements were carried out in both frontal (i.e. laser beam probing the main sample surface along the same normal direction of the previously implanted ions) and lateral (i.e. laser beam probing the lateral sample surface orthogonally with respect to the same ion implantation direction) geometries. In particular, the latter geometry allowed a direct probing of the centers lifetime along the strongly nonuniform damage profiles of MeV ions in the crystal. The extrapolation of empirical quasi-exponential decay parameters allowed the systematic estimation of the mean quantum efficiency of the centers as a function of intrinsic and ion-induced defect concentration, which is of direct relevance for the current studies on the use of diamond color centers for photonic applications.

cond-mat.mtrl-sci↗

arXiv2013

Splitting of photo-luminescent emission from nitrogen-vacancy centers in diamond induced by ion-damage-induced stress

We report a systematic investigation on the spectral splitting of negatively charged, nitrogen-vacancy (NV-) photo-luminescent emission in single crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a HPHT diamond, clearly distinguishable spectral components in the NV- emission develop over a range of 4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV- centers for ensemble quantum information protocols.

cond-mat.mtrl-sci↗

arXiv2012

Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy (~MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickness mask allows the accurate modulation of the depth at which the microchannels are formed, from several μm deep up to the very surface of the sample. By means of cross-sectional transmission electron microscopy (TEM) we demonstrate that the technique allows the direct writing of amorphous (and graphitic, upon suitable thermal annealing) microstructures extending within the insulating diamond matrix in the three spatial directions, and in particular that buried channels embedded in a highly insulating matrix emerge and electrically connect to the sample surface at specific locations. Moreover, by means of electrical characterization both at room temperature and variable temperature, we investigate the conductivity and the charge-transport mechanisms of microchannels obtained by implantation at different ion fluences and after subsequent thermal processes, demonstrating that upon high-temperature annealing, the channels implanted above a critical damage density convert to a stable graphitic phase. These structures have significant impact for different applications, such as compact ionizing radiation detectors, dosimeters, bio-sensors and more generally diamond-based devices with buried three-dimensional all-carbon electrodes.

cond-mat.mtrl-sci↗

arXiv2008

Decoherence measurement of single phonons using spectral interference

A technique to measure the decoherence time of optical phonons in a solid is presented. Phonons are excited with a pair of time delayed 80 fs, near infrared pulses via spontaneous, transient Raman scattering. The fringe visibility of the resulting Stokes pulse pair, as a function of time delay, is used to measure the phonon dephasing time. The method avoids the need to use either narrow band or few femtosecond pulses and is useful for low phonon excitations. The dephasing time of phonons created in bulk diamond is measured to be tau = 6.8ps (1.56cm-1).

quant-ph↗

arXiv2007

Creating diamond color centers for quantum optical applications

Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized, and decoherence due to the residual damage caused by the implantation process itself must be mitigated. To that end we have studied photoluminescence (PL) from NV$^-$, NV$^0$ and GR1 centers formed by ion implantation of 2MeV He ions over a wide range of fluences. The sample was annealed at $600^{\circ}$C to minimize residual vacancy diffusion, allowing for the concurrent analysis of PL from NV centers and irradiation induced vacancies (GR1). We find non-monotic PL intensities with increasing ion fluence, monotonic increasing PL in NV$^0$/NV$^-$ and GR1/(NV$^0$ + NV$^1$) ratios, and increasing inhomogeneous broadening of the zero-phonon lines with increasing ion fluence. All these results shed important light on the optimal formation conditions for NV qubits. We apply our findings to an off-resonant photonic quantum memory scheme using vibronic sidebands.

quant-ph↗

arXiv2005

Evidence of a dominant Maki-Thompson process in the fluctuation conductivity of the Bi-2212 superconducting whiskers

We report the measurement of the a-axis fluctuation conductivity in zero field for Bi2Sr2CaCu2O8+x microcrystals. A good geometrical characterization and an original method for data analysis allow to determine its temperature behaviour to a high accuracy. The correct application of the complete fluctuation theory [A. A. Varlamov et al., Adv. Phys. 48, 655 (1999)], with a minor correction for the k_tilde factor, leads to the conclusion that the anomalous MT term is the most important contribution throughout the whole temperature range of interest. More traditional alternative interpretations of the experimental data are also investigated and their inconsistency is demonstrated. This implies an s-wave symmetry for the order parameter and could provide a physical mechanism for the preformed pair scenario.

cond-mat.supr-con↗