arXiv subjects

P. Orgiani

Publications and source records attributed to P. Orgiani.

13 recordsLinked to original sources

arXiv2026

Dimensionality-Driven Electronic and Orbital Transitions Mediating Interfacial Magnetism in LaNiO3/CaMnO3 Observed In Situ

Emergent magnetic states at oxide interfaces arise from the interplay of charge transfer, orbital reconstruction, and dimensional confinement, offering a route to engineered correlated-electron behavior in nanoscale spintronic materials. Here, we combine in situ synthesis, polarization-dependent angle-resolved photoelectron spectroscopy, X-ray magnetic circular dichroism, and first-principles electronic-structure calculations to investigate LaNiO3/CaMnO3 superlattices. We show that reducing the LaNiO3 thickness drives a metal-insulator transition accompanied by loss of electronic coherence and an orbital-polarization crossover in the ultrathin limit. These changes weaken charge transfer across the interface and suppress the interfacial Mn magnetic moment in CaMnO3, revealing that the emergent ferromagnetic state is directly governed by electronic confinement in LaNiO3. The insulating state and orbital reconstruction are reproduced by density functional theory combined with dynamical mean-field theory. Together, these results establish a direct and tunable coupling among electronic, orbital, and magnetic degrees of freedom in oxide heterostructures.

cond-mat.str-el↗

arXiv2023

Unveiling the electronic structure of pseudo-tetragonal WO$_3$ thin films

WO$_3$ is a binary 5d compound which has attracted remarkable attention due to the vast array of structural transitions that it undergoes in its bulk form. In the bulk, a wide range of electronic properties has been demonstrated, including metal-insulator transitions and superconductivity upon doping. In this context, the synthesis of WO$_3$ thin films holds considerable promise for stabilizing targeted electronic phase diagrams and embedding them in technological applications. However, to date, the electronic structure of WO$_3$ thin films is experimentally unexplored, and only characterized by numerical calculations. Underpinning such properties experimentally would be important to understand not only the collective behavior of electrons in this transition metal oxide, but also to explain and engineer both the observed optical responses to carriers' concentration and its prized catalytic activity. Here, by means of tensile strain, we stabilize WO$_3$ thin films into a stable phase, which we call pseudo-tetragonal, and we unveil its electronic structure by combining photoelectron spectroscopy and density functional theory calculations. This study constitutes the experimental demonstration of the electronic structure of WO$_3$ thin-films and allows us to pin down the first experimental benchmarks of the fermiology of this system.

cond-mat.mtrl-sci↗

arXiv2022

Gapped collective charge excitations and interlayer hopping in cuprate superconductors

We use resonant inelastic x-ray scattering (RIXS) to probe the propagation of plasmons in the electron-doped cuprate superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ (SLCO). We detect a plasmon gap of $\sim$~120 meV at the two-dimensional Brillouin zone center, indicating that low-energy plasmons in SLCO are not strictly acoustic. The plasmon dispersion, including the gap, is accurately captured by layered $t$-$J$-$V$ model calculations. A similar analysis performed on recent RIXS data from other cuprates suggests that the plasmon gap is generic and its size is related to the magnitude of the interlayer hopping $t_z$. Our work signifies the three-dimensionality of the charge dynamics in layered cuprates and provides a new method to determine $t_z$.

cond-mat.str-el↗

arXiv2018

Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect the observable properties in the ultrathin films. Here we report results obtained for near-ideal LaNiO3 films with different thicknesses and terminations grown by atomic layer-by-layer laser molecular beam epitaxy on LaAlO3 substrates. We find that the room-temperature metallic behavior persists until the film thickness is reduced to an unprecedentedly small 1.5 unit cells (NiO2 termination). Electronic structure measurements using x-ray absorption spectroscopy and first-principles calculation suggest that oxygen vacancies existing in the films also contribute to the metal insulator transition.

cond-mat.mtrl-sci↗

arXiv2010

Optical Properties of (SrMnO3)n/(LaMnO3)2n superlattices: an insulator-to-metal transition observed in the absence of disorder

We measure the optical conductivity of (SrMnO3)n/(LaMnO3)2n superlattices (SL) for n=1,3,5, and 8 and 10 < T < 400 K. Data show a T-dependent insulator to metal transition (IMT) for n \leq 3, driven by the softening of a polaronic mid-infrared band. At n = 5 that softening is incomplete, while at the largest-period n=8 compound the MIR band is independent of T and the SL remains insulating. One can thus first observe the IMT in a manganite system in the absence of the disorder due to chemical doping. Unsuccessful reconstruction of the SL optical properties from those of the original bulk materials suggests that (SrMnO3)n/(LaMnO3)2n heterostructures give rise to a novel electronic state.

cond-mat.mtrl-sci↗

arXiv2010

Multiple double-exchange mechanism by Mn$^{2+}$-doping in manganite compounds

Double-exchange mechanisms in RE$_{1-x}$AE$_{x}$MnO$_{3}$ manganites (where RE is a trivalent rare-earth ion and AE is a divalent alkali-earth ion) relies on the strong exchange interaction between two Mn$^{3+}$ and Mn$^{4+}$ ions through interfiling oxygen 2p states. Nevertheless, the role of RE and AE ions has ever been considered "silent" with respect to the DE conducting mechanisms. Here we show that a new path for DE-mechanism is indeed possible by partially replacing the RE-AE elements by Mn$^{2+}$-ions, in La-deficient La$_{x}$MnO$_{3-δ}$ thin films. X-ray absorption spectroscopy demonstrated the relevant presence of Mn$^{2+}$ ions, which is unambiguously proved to be substituted at La-site by Resonant Inelastic X-ray Scattering. Mn$^{2+}$ is proved to be directly correlated to the enhanced magneto-transport properties because of an additional hopping mechanism trough interfiling Mn$^{2+}$-ions, theoretically confirmed by calculations within the effective single band model. The very idea to use Mn$^{2+}$ both as a doping element and an ions electronically involved in the conduction mechanism, has never been foreseen, revealing a new phenomena in transport properties of manganites. More important, such a strategy might be also pursed in other strongly correlated materials.

cond-mat.str-el↗

arXiv2009

Evolution of magnetic phases and orbital occupation in (SrMnO3)n/(LaMnO3)2n superlattices

The magnetic and electronic modifications induced at the interfaces in (SrMnO$_{3}$)$_{n}$/(LaMnO$_{3}$)$_{2n}$ superlattices have been investigated by linear and circular magnetic dichroism in the Mn L$_{2,3}$ x-ray absorption spectra. Together with theoretical calculations, our data demonstrate that the charge redistribution across interfaces favors in-plane ferromagnetic (FM) order and $e_{g}(x^{2}-y^{2})$ orbital occupation, in agreement with the average strain. Far from interfaces, inside LaMnO$_3$, electron localization and local strain favor antiferromagnetism (AFM) and $e_{g}(3z^{2}-r^{2})$ orbital occupation. For $n=1$ the high density of interfacial planes ultimately leads to dominant FM order forcing the residual AFM phase to be in-plane too, while for $n \geq 5$ the FM layers are separated by AFM regions having out-of-plane spin orientation.

cond-mat.str-el↗

arXiv2007

Effect of Mn substitution by Ga on the optical properties of a metallic manganite

In a metallic manganite like La(2/3)Sr(1/3)MnO(3), the substitution of Mn(+3) by Ga(+3) dilutes the ferromagnetic order and locally cancels the Jahn-Teller distortion, without heavily affecting the crystal structure. One can thus follow the changes in the charge dynamics induced by Ga, until the ferro-metallic manganite is turned into an insulator. Here this phenomenon is studied in detail through the infrared reflectivity of five samples of La(2/3)Sr(1/3)Mn(1-x)Ga(x)O(3), with x increasing from 0 to 0.30 and for 50 < T < 320 K. A simple model which links the measured optical parameters to the magnetization M(x, T) well describes the behavior of the plasma frequency, the scattering rate, and the mid-infrared absorption along the metal-to-insulator transition.

cond-mat.str-el↗

arXiv2006

Systematic study of disorder induced by neutron irradiation in MgB2 thin films

The effects of neutron irradiation on normal state and superconducting properties of epitaxial magnesium diboride thin films are studied up to fluences of 1020 cm-2. All the properties of the films change systematically upon irradiation. Critical temperature is suppressed and, at the highest fluence, no superconducting transition is observed down to 1.8 K. Residual resistivity progressively increases from 1 to 190 microohmcm; c axis expands and then saturates at the highest damage level. We discuss the mechanism of damage through the comparison with other damage procedures. The normal state magnetoresistivity of selected samples measured up to high fields (28 and 45T) allows to determine unambiguously the scattering rates in each band; the crossover between the clean and dirty limit in each sample can be monitored. This set of samples, with controlled amount of disorder, is suitable to study the puzzling problem of critical field in magnesium diboride thin films. The measured critical field values are extremely high (of the order of 50T in the parallel direction at low fluences) and turns out to be rather independent on the experimental resistivity, at least at low fluences. A simple model to explain this phenomenology is presented.

cond-mat.supr-con↗

arXiv2006

Role of interband scattering in neutron irradiated MgB$_2$ thin films by Scanning Tunneling Spectroscopy measurements

A series of MgB$_2$ thin films systematically disordered by neutron irradiation have been studied by Scanning Tunneling Spectroscopy. The c-axis orientation of the films allowed a reliable determination of local density of state of the $\pi$ band. With increasing disorder, the conductance peak moves towards higher voltages and becomes lower and broader, indicating a monotonic increase of the $\pi$ gap and of the broadening parameter. These results are discussed in the frame of two-band superconductivity.

cond-mat.supr-con↗

arXiv2006

Intrinsic nonlinearity probed by intermodulation distortion microwave measurements on high quality MgB2 thin films

The two tone intermodulation distortion arising in MgB2 thin films synthesized by hybrid physical-chemical vapour deposition is studied in order to probe the influence of the two bands on the nonlinear response of this superconductor. The measurements are carried out by using a dielectrically loaded copper cavity operating at 7 GHz. Microwave data on samples having critical temperatures above 41 K, very low resistivity values, and residual resistivity ratio larger than 10, are shown. The dependence of the nonlinear surface losses and of the third order intermodulation products on the power feeding the cavity and on the temperature is analyzed. At low power, the signal arising from distortion versus temperature shows the intrinsic s-wave behavior expected for this compound. Data are compared with measurements performed on Nb and YBCO thin films using the same technique.

cond-mat.supr-con↗

arXiv2005

Dissipation in ultra-thin current-carrying superconducting bridges; evidence for quantum tunneling of Pearl vortices

We have made current-voltage (IV) measurements of artificially layered high-$T_c$ thin-film bridges. Scanning SQUID microscopy of these films provides values for the Pearl lengths $Λ$ that exceed the bridge width, and shows that the current distributions are uniform across the bridges. At high temperatures and high currents the voltages follow the power law $V \propto I^n$, with $n=Φ_0^2/8π^2Λk_B T+1$, and at high temperatures and low-currents the resistance is exponential in temperature, in good agreement with the predictions for thermally activated vortex motion. At low temperatures, the IV's are better fit by $\ln V$ linear in $I^{-2}$. This is expected if the low temperature dissipation is dominated by quantum tunneling of Pearl vortices.

cond-mat.supr-con↗

arXiv2004

Magnetic imaging of Pearl vortices

We have used scanning SQUID magnetometry to image vortices in ultra-thin [Ba$_{0.9}$Nd$_{0.1}$CuO$_{2+x}$]$_m$/[CaCuO$_2$]$_n$ (CBCO) high temperature superconductor samples, with as few as three superconducting CuO$_2$ planes. The Pearl lengths ($Λ= 2λ_{L}^2/d$, $λ_{L}$ the London penetration depth, $d$ the superconducting film thickness) in these samples, as determined by fits to the vortex images, agree with those by local susceptibility measurements, and can be as long as 1mm. The in-plane penetration depths $λ_{ab}$ inferred from the Pearl lengths are longer than many bulk cuprates with comparable critical temperatures. We speculate on the causes of the long penetration depths, and on the possibility of exploiting the unique properties of these superconductors for basic experiments.

cond-mat.supr-con↗