SearcharxivSearch

arXiv subjects

P. P. Chen

Publications and source records attributed to P. P. Chen.

3 recordsLinked to original sources

Optimization of the JUNO liquid scintillator composition using a Daya Bay antineutrino detector

To maximize the light yield of the liquid scintillator (LS) for the Jiangmen Underground Neutrino Observatory (JUNO), a 20 t LS sample was produced in a pilot plant at Daya Bay. The optical properties of the new LS in various compositions were studied by replacing the gadolinium-loaded LS in one antineutrino detector. The concentrations of the fluor, PPO, and the wavelength shifter, bis-MSB, were increased in 12 steps from 0.5 g/L and <0.01 mg/L to 4 g/L and 13 mg/L, respectively. The numbers of total detected photoelectrons suggest that, with the optically purified solvent, the bis-MSB concentration does not need to be more than 4 mg/L. To bridge the one order of magnitude in the detector size difference between Daya Bay and JUNO, the Daya Bay data were used to tune the parameters of a newly developed optical model. Then, the model and tuned parameters were used in the JUNO simulation. This enabled to determine the optimal composition for the JUNO LS: purified solvent LAB with 2.5 g/L PPO, and 1 to 4 mg/L bis-MSB.

physics.ins-det

Weak field magnetoresistance of narrow-gap semiconductor InSb

The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.

cond-mat.mtrl-sci

Weak field magnetoresistance of narrow-gap semiconductors InSb

The magnetoresistance of InSb has been intensively investigated. The experiments we perform here focus on weak field magnetoresistance of InSb thin film. We investigate the magnetoresistance of InSb films in perpendicular, tilted as well as parallel magnetic field. Our results verify the previous observations concerning weak localization effect in InSb thin film. Moreover, we systematically study the anisotropy of magnetoresistance of InSb. We find that the existence of in-plane field can effectively suppress the weak localization effect of InSb film. We fit the experimental data with two types of models, the match between data and model is excellent. From the fitting procedure, we get information about phase coherence time, spin-orbit scattering time. The information about Zeeman effect and sample roughness are also extracted from the fitting procedure.

cond-mat.mtrl-sci