arXiv subjects

P. P. Freitas

Publications and source records attributed to P. P. Freitas.

At least 19 recordsLinked to original sources

arXiv2024

Reconfigurable classifier based on spin torque driven magnetization switching in electrically connected magnetic tunnel junctions

A promising branch of neuromorphic computing aims to perform cognitive operations in hardware leveraging the physics of efficient and well-established nano-devices. In this work, we present a reconfigurable classifier based on a network of electrically connected magnetic tunnel junctions that categorizes information encoded in the amplitude of input currents through the spin torque driven magnetization switching output configuration. The network can be trained to classify new data by adjusting additional programming currents applied selectively to the junctions. We experimentally demonstrate that a network composed of three magnetic tunnel junctions can learn to classify spoken vowels with a recognition rate that surpasses the performance of software multilayer neural networks with the same number of trained parameters in this task. These results, obtained with the same nano-devices and working principle employed in industrial spin-transfer torque magnetic random-access memories (STT-MRAM), constitute an important step towards the development of large-scale neuromorphic networks based on well-established technology.

physics.app-ph↗

arXiv2021

Room temperature two terminal tunnel magnetoresistance in lateral graphene transistor

We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor, produced using a standard large-scale microfabrication process. The high spin diffusion length of pristine graphene in the channel, measured both directly and by the Hanle effect, and the tuning of relation between electrode resistance area present in the device architecture, allowed us to observe local tunnel magnetoresistance at room temperature, a new finding for this type of device. Results also indicate that while pure spin currents are less sensitive to temperature variations, spin-polarized current switching by external voltage is more efficient, due to a combination of the Rashba effect and change in carrier mobility by Fermi level shift

cond-mat.mes-hall↗

arXiv2019

Magnetodynamics in orthogonal nanocontact spin-torque nano-oscillators based on magnetic tunnel junctions

We demonstrate field and current controlled magnetodynamics in nanocontact spin-torque nano-oscillators (STNOs) based on orthogonal magnetic tunnel junctions (MTJs). We systematically analyze the microwave properties (frequency $f$, linewidth $Δf$, power $P$, and frequency tunability $df/dI$) with their physical origins---perpendicular magnetic anisotropy (PMA), damping-like and field-like spin transfer torque (STT), and voltage-controlled magnetic anisotropy (VCMA). These devices present several advantageous characteristics: high emission frequencies ($f> 20$ GHz), high frequency tunability ($df/dI=0.25$~GHz/mA), and zero-field operation ($f\sim 4$ GHz). Furthermore, a detailed investigation of $f(H, I)$ reveals that $df/dI$ is mostly governed by the large VCMA (287~fJ/(V$\cdot$m)), while STT plays a negligible role.

physics.app-ph↗

arXiv2019

Enhancing the injection locking range of spin torque oscillators through mutual coupling

We investigate how the ability of the vortex oscillation mode of a spin-torque nano-oscillator to lock to an external microwave signal is modified when it is coupled to another oscillator. We show experimentally that mutual electrical coupling can lead to locking range enhancements of a factor 1.64. Furthermore, we analyze the evolution of the locking range as a function of the coupling strength through experiments and numerical simulations. By uncovering the mechanisms at stake in the locking range enhancement, our results will be useful for designing spin-torque nano-oscillators arrays with high sensitivities to external microwave stimuli.

cond-mat.mes-hall↗

arXiv2018

Tuning magnetic charge population and mobility in unidirectional array of nanomagnets as a function of lattice parameters

Sets of nanomagnets are often utilized to mimic cellular automata in design of nanomagnetic logic devices or frustration and emergence of magnetic charges in artificial spin ice systems. in previous work we showed that unidirectional arrangement of nanomagnets can behave as artificial spin ice, with frustration arising from second neighbor dipolar interaction, and present good magnetic charge mobility due to the low string tension among charges. Here, we present an experimental investigation of magnetic charge population and mobility in function of lateral and longitudinal distance among nanomagnets. Our results corroborate partially the theoretical predictions, performed elsewhere by emergent interaction model, could be useful in nanomagnet logic devices design and brings new insights about the best design for magnetic charge ballistic transport under low external magnetic field with magnetic charge mobility tunning for application in magnetricity.

cond-mat.mes-hall↗

arXiv2018

Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions

In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is important for rectification in wireless charging and energy harvesting applications. By carefully balancing the amount of PMA acting in the free layer the measured RF to DC voltage conversion efficiency can be made as large as 11%.

cond-mat.mes-hall↗

arXiv2018

Magnetic oscillations Excited by Concurrent Spin Injection from a Tunneling Current and a Spin Hall Current

In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the critical tunneling current to zero. This reduction of the critical charge currents can improve the endurance of both STNOs and non-volatile magnetic memories (MRAM) devices. It is shown that the system response can be described in terms of an injected spin current density $J_s$ which results from the contribution of both spin injection mechanisms, with the tunneling current polarization $p$ and the spin Hall angle $θ$ acting as key parameters determining the efficiency of each injection mechanism. The experimental data exhibits an excellent agreement with this model which can be used to quantitatively predict the critical points ($J_s = -2.26\pm 0.09 \times 10^9 \hbar/e$ A/m$^2$) and the oscillation amplitude as a function of the input currents. In addition, the fitting of the data also allows an independent confirmation of the values estimated for the spin Hall angle and tunneling current polarization as well as the extraction of the damping $α= 0.01$ and non-linear damping $Q = 3.8\pm 0.3$ parameters.

cond-mat.mes-hall↗

arXiv2017

Faster, farther, stronger: spin transfer torque driven high order propagating spin waves in nano-contact magnetic tunnel junctions

Short wave-length exchange-dominated propagating spin waves will enable magnonic devices to operate at higher frequencies and higher data transmission rates.1 While GMR based magnetic nano-contacts are highly efficient injectors of propagating spin waves2,3, the generated wave lengths are 2.6 times the nano-contact diameter4, and the electrical signal strength remains much too weak for practical applications. Here we demonstrate nano-contact based spin wave generation in magnetic tunnel junction stacks, and observe large discrete frequency steps consistent with the hitherto ignored possibility of second and third order propagating spin waves with wave lengths of 120 and 74 nm, i.e. much smaller than the 150 nm nano-contact. These higher-order propagating spin waves will not only enable magnonic devices to operate at much higher frequencies, but also greatly increase their transmission rates and spin wave propagating lengths, both proportional to the much higher group velocity.

physics.app-ph↗

arXiv2017

Realization of Rectangular Artificial Spin Ice and Direct Observation of High Energy Topology

In this letter, we have constructed and experimentally investigated frustrated arrays of dipoles forming two-dimensional artificial spin ices with different lattice parameters (rectangular arrays with horizontal and vertical lattice spacings denoted by $a$ and $b$ respectively). Arrays with three different ratios $γ=a/b = \sqrt{2}$, $\sqrt{3}$ and $\sqrt{4}$ are studied. Theoretical calculations of low-energy demagnetized configurations for these same parameters are also presented. Experimental data for demagnetized samples confirm most of the theoretical results. However, the highest energy topology (doubly-charged monopoles) does not emerge in our theoretical model, while they are seen in experiments for large enough $γ$. Our results also insinuate that magnetic monopoles may be almost free in rectangular lattices with a critical ratio $γ= γ_{c} = \sqrt{3}$, supporting previous theoretical predictions.

cond-mat.stat-mech↗

arXiv2016

Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wafer scale has generally not been sought. Currently, whenever an electrolyte-gated FET (EGFET) is used, an external, cumbersome, out-of-plane gate electrode is required. Here, an alternative architecture for graphene EGFET is presented. In this architecture, source, drain, and gate are in the same plane, eliminating the need for an external gate electrode and the use of an additional reservoir to confine the electrolyte inside the transistor active zone. This planar structure with an integrated gate allows for wafer-scale fabrication of high-performance graphene EGFETs, with carrier mobility up to 1800 cm2 V-1 s-1. As a proof-of principle, a chemical sensor was achieved. It is shown that the sensor can discriminate between saline solutions of different concentrations. The proposed architecture will facilitate the mass production of graphene sensors, materializing the potential of previous achievements in fundamental and applied graphene research.

cond-mat.mes-hall↗

arXiv2015

Femtosecond control of electric currents at the interfaces of metallic ferromagnetic heterostructures

The idea to utilize not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement would be to develop ultrafast spintronics using femtosecond laser pulses. Employing terahertz (10$^{12}$ Hz) emission spectroscopy, we demonstrate optical generation of spin-polarized electric currents at the interfaces of metallic ferromagnetic heterostructures at the femtosecond timescale. The direction of the photocurrent is controlled by the helicity of the circularly polarized light. These results open up new opportunities for realizing spintronics in the unprecedented terahertz regime and provide new insights in all-optical control of magnetism.

cond-mat.mes-hall↗

arXiv2014

Dynamic exchange via spin currents in acoustic and optical modes of ferromagnetic resonance in spin-valve structures

Two ferromagnetic layers magnetically decoupled by a thick normal metal spacer layer can be, nevertheless, dynamically coupled via spin currents emitted by the spin-pump and absorbed through the spin-torque effects at the neighboring interfaces. A decrease of damping in both layers due to a partial compensation of the angular momentum leakage in each layer was previously observed at the coincidence of the two ferromagnetic resonances. In case of non-zero magnetic coupling, such a dynamic exchange will depend on the mutual precession of the magnetic moments in the layers. A difference in the linewidth of the resonance peaks is expected for the acoustic and optical regimes of precession. However, the interlayer coupling hybridizes the resonance responses of the layers and therefore can also change their linewidths. The interplay between the two mechanisms has never been considered before. In the present work, the joint influence of the hybridization and non-local damping on the linewidth has been studied in weakly coupled NiFe/CoFe/Cu/CoFe/MnIr spin-valve multilayers. It has been found that the dynamic exchange by spin currents is different in the optical and acoustic modes, and this difference is dependent on the interlayer coupling strength. In contrast to the acoustic precession mode, the dynamic exchange in the optical mode works as an additional damping source. A simulation in the framework of the Landau-Lifshitz-Gilbert formalism for two ferromagnetic layers coupled magnetically and by spin currents has been done to separate the effects of the non-local damping from the resonance modes hybridization. In our samples both mechanisms bring about linewidth changes of the same order of magnitude, but lead to a distinctly different angular behavior. The obtained results are relevant for a broad class of coupled magnetic multilayers with ballistic regime of the spin transport.

cond-mat.mes-hall↗

arXiv2007

Electrical current-driven pinhole formation and insulator-metal transition in tunnel junctions

Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS effect is here studied in TJs with two thin (20 Å) non-magnetic (NM) Ta electrodes inserted above and below the insulating barrier. We observe resistance (R) switching for positive applied electrical current (flowing from the bottom to the top lead), characterized by a continuous resistance decrease and associated with current-driven displacement of metallic ions from the bottom electrode into the barrier (thin barrier state). For negative currents, displaced ions return into their initial positions in the electrode and the electrical resistance gradually increases (thick barrier state). We measured the temperature (T) dependence of the electrical resistance of both thin- and thick-barrier states ($R_b$ and R$_B$ respectively). Experiments showed a weaker R(T) variation when the tunnel junction is in the $R_b$ state, associated with a smaller tunnel contribution. By applying large enough electrical currents we induced large irreversible R-decreases in the studied TJs, associated with barrier degradation. We then monitored the evolution of the R(T) dependence for different stages of barrier degradation. In particular, we observed a smooth transition from tunnel- to metallic-dominated transport. The initial degradation-stages are related to irreversible barrier thickness decreases (without the formation of pinholes). Only for later barrier degradation stages do we have the appearance of metallic paths between the two electrodes that, however, do not lead to metallic dominated transport for small enough pinhole radius.

cond-mat.mtrl-sci↗

arXiv2006

Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area

Magnetic tunnel junctions (MTJs) with partially oxidized 9 ÅAlO$_x$-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric breakdown in such underoxidized magnetic tunnel junctions, focusing on its dependence on tunnel junction area and oxidation time. A clear relation between breakdown mechanism and junction area is observed for the MTJs with the highest studied oxidation time: samples with large areas fail usually due to extrinsic causes (characterized by a smooth resistance decrease at dielectric breakdown). Small area junctions fail mainly through an intrinsic mechanism (sharp resistance decrease at breakdown). However, this dependence changes for lower oxidation times, with extrinsic breakdown becoming dominant. In fact, in the extremely underoxidized magnetic tunnel junctions, failure is exclusively related with extrinsic causes, independently of MTJ-area. These results are related with the presence of defects in the barrier (weak spots that lead to intrinsic breakdown) and of metallic unoxidized Al nanoconstrictions (leading to extrinsic breakdown).

cond-mat.mtrl-sci↗

arXiv2006

Nanoscopic processes of Current Induced Switching in thin tunnel junctions

In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve R-switching is to use an electrical current, preferably of low intensity. Such Current Induced Switching (CIS) was recently observed in thin magnetic tunnel junctions, and attributed to electromigration of atoms into/out of the insulator. Here we study the Current Induced Switching, electrical resistance, and magnetoresistance of thin MnIr/CoFe/AlO$_x$/CoFe tunnel junctions. The CIS effect at room temperature amounts to 6.9% R-change between the high and low states and is attributed to nanostructural rearrangements of metallic ions in the electrode/barrier interfaces. After switching to the low R-state some electro-migrated ions return to their initial sites through two different energy channels. A low (high) energy barrier of $\sim$0.13 eV ($\sim$0.85 eV) was estimated. Ionic electromigration then occurs through two microscopic processes associated with different types of ions sites/defects. Measurements under an external magnetic field showed an additional intermediate R-state due to the simultaneous conjugation of the MR (magnetic) and CIS (structural) effects.

cond-mat.mtrl-sci↗

arXiv2006

Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications

We present a detailed study on domain imaging, Kerr effect magnetometry (MOKE) and magnetoresistance (MR), for a series of 20 nm Co$_{73.8}$Fe$_{16.2}$B$_{10}$ thin films, both as-deposited (amorphous) and annealed (crystalline). By considering the two different (orthogonal) in-plane magnetization components, obtained by MOKE measurements, we were able to study the uniaxial anisotropy induced during CoFeB-deposition and to discriminate the magnetization processes under a magnetic field parallel and perpendicular to such axis. MOKE magnetic imaging enabled us to observe the dominant magnetization processes, namely domain wall motion and moment rotation. These processes were correlated with the behavior of the magnetoresistance, which depends both on short-range spin disorder electron scattering and on the angle between the electrical current and the spontaneous magnetization ($\emph{\textbf{M}}_{S}$). A simple numerical treatment based on Stoner-Wolfarth model enables us to satisfactorily predict the magnetization behaviour observed in these films. A comparison between the results in Co$_{73.8}$Fe$_{16.2}$B$_{10}$ films and the previous ones obtained in annealed Co$_{80}$Fe$_{20}$ films, show that the introduction of boron in CoFe reduces significatively the coercive and saturation fields along the easy axis (e.g. $H_{c}$ from $\sim$ 2 down to $\sim$ 0.5 kAm$^{-1}$). Also, the magnetization along the hard axis saturates at lower fields. We conclude that amorphous and nanocrystalline CoFeB films show low coercive fields and abrupt switching, as well as absence of short range spin disorder effects after switching when compared with Co$_{80}$Fe$_{20}$.

cond-mat.mtrl-sci↗

arXiv2005

Collective states of interacting ferromagnetic nanoparticles

Discontinuous magnetic multilayers [CoFe/Al2O3] are studied by use of magnetometry, susceptometry and numeric simulations. Soft ferromagnetic Co80Fe20 nanoparticles are embedded in a diamagnetic insulating a-Al2O3 matrix and can be considered as homogeneously magnetized superspins exhibiting randomness of size (viz. moment), position and anisotropy. Lacking intra-particle core-surface ordering, generic freezing processes into collective states rather than individual particle blocking are encountered. With increasing particle density one observes first superspin glass and then superferromagnetic domain state behavior. The phase diagram resembles that of a dilute disordered ferromagnet. Criteria for the identification of the individual phases are given.

cond-mat.mtrl-sci↗

arXiv2005

Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic: nanoconstrictions, local heating, and direct and wind forces

Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier (I). Here we study how the CIS effect is influenced by a thin non-magnetic (NM) Ta layer, deposited just below the AlO$_x$ insulating barrier in tunnel junctions of the type FM/NM/I/FM (FM=CoFe). Enhanced resistance switching occurs with increasing maximum applied current ($\Imax$), until a plateau of constant CIS is reached for $\Imax\sim65$ mA (CIS$\sim$60%) and above. However, such high electrical currents also lead to a large ($\sim$9%) irreversible resistance decrease, indicating barrier degradation. Anomalous voltage-current characteristics with negative derivative were also observed near $\pm\Imax$ and this effect is here attributed to heating in the tunnel junction. One observes that the current direction for which resistance switches in FM/NM/I/FM (clockwise) is opposite to that of FM/I/FM tunnel junctions (anti-clockwise). This effect will be discussed in terms of a competition between the electromigration contributions due to the so called direct and wind forces. It will be shown that the direct force is likely to dominate electromigration in the Ta (NM) layers, while the wind contribution likely dominates in the CoFe (FM) layers.

cond-mat.mtrl-sci↗