arXiv subjects

P. Roushan

Publications and source records attributed to P. Roushan.

41 records · Page 3Linked to original sources

arXiv2013

Catching Shaped Microwave Photons with 99.4% Absorption Efficiency

We demonstrate a high efficiency deterministic quantum receiver to convert flying qubits to logic qubits. We employ a superconducting resonator, which is driven with a shaped pulse through an adjustable coupler. For the ideal "time reversed" shape, we measure absorption and receiver fidelities at the single microwave photon level of, respectively, 99.41% and 97.4%. These fidelities are comparable with gates and measurement and exceed the deterministic quantum communication and computation fault tolerant thresholds.

quant-ph↗

arXiv2013

Coherent Josephson qubit suitable for scalable quantum integrated circuits

We demonstrate a planar, tunable superconducting qubit with energy relaxation times up to 44 microseconds. This is achieved by using a geometry designed to both minimize radiative loss and reduce coupling to materials-related defects. At these levels of coherence, we find a fine structure in the qubit energy lifetime as a function of frequency, indicating the presence of a sparse population of incoherent, weakly coupled two-level defects. This is supported by a model analysis as well as experimental variations in the geometry. Our `Xmon' qubit combines facile fabrication, straightforward connectivity, fast control, and long coherence, opening a viable route to constructing a chip-based quantum computer.

quant-ph↗

arXiv2010

The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3

The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi1.96Mn0.04Te3 and Bi1.91Mn0.09Te3 a second order ferromagnetic transition is observed, with Tc ~ 9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p-type. Angle resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2Te3 are also present in ferromagnetic Mn-doped Bi2-xMnxTe3, and that the dispersion relations of the surface states are changed in a subtle fashion.

cond-mat.mtrl-sci↗

arXiv2009

Superconductivity in CuxBi2Se3 and its implications for pairing in the undoped topological insulator

Bi2Se3 is one of a handful of known topological insulators. Here we show that copper intercalation in the van der Waals gaps between the Bi2Se3 layers, yielding an electron concentration of ~ 2 x 10^20cm-3, results in superconductivity at 3.8 K in CuxBi2Se3 for x between 0.12 and 0.15. This demonstrates that Cooper pairing is possible in Bi2Se3 at accessible temperatures, with implications for study of the physics of topological insulators and potential devices.

cond-mat.supr-con↗

arXiv2009

p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications

The growth and elementary properties of p-type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3, the p-type behavior has been induced through low level substitutions (1 percent or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi1.98Ca0.02Se3 relative to the n-type material. p-type single crystals with ab plane Seebeck coefficients of +180 microVK-1 at room temperature are reported. These crystals show a giant anomalous peak in the Seebeck coefficient at low temperatures, reaching +120 microVK-1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p-type Bi2Se3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.

cond-mat.mtrl-sci↗