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P. S. Anil Kumar

Publications and source records attributed to P. S. Anil Kumar.

At least 19 recordsLinked to original sources

Field-like Perturbation Enabled Six-state Readout in Triaxial $α$-$\mathrm{Fe}_{2}\mathrm{O}_{3}$|Pt Bi-layers

Canted antiferromagnet $α$-$\mathrm{Fe}_{2}\mathrm{O}_{3}$|Pt bilayers offer a platform for multistate memory, but spin Hall magnetoresistance (SMR) readout cannot distinguish states separated by $180^{\circ}$, limiting detection to three states. We show that a field-like perturbation lifts the degeneracy of opposite states in $α$-$\mathrm{Fe}_{2}\mathrm{O}_{3}$, enabling the resolution of six states in the SMR signal. We introduce a dual-modulation SMR method to mitigate thermal drifts and enable reliable readout. Computations of first- and second-harmonic SMR reveal the role of exchange, anisotropy and field-like perturbations in resolving the states.

cond-mat.mes-hall

Probing Interfacial Magnetic Anisotropy in \texorpdfstring{CoV$_{2}$O$_{4}$}{CoV2O4} using Spin Hall Magnetoresistance

Spin Hall magnetoresistance (SMR) has emerged as a powerful probe for investigating interfacial spin transport and magnetic anisotropy in complex oxide heterostructures. In this work, we investigate the interfacial magnetic anisotropy in Pt/CVO through angle-dependent magnetotransport measurements. Unlike the bulk-sensitive magnetic measurements on both strained CVO and Pt/CVO films, which exhibit a ferrimagnetic transition at $T_{C} \approx 150$ K accompanied by out-of-plane anisotropy that reorients toward in-plane anisotropy below 90 K, SMR reveals a distinct interfacial magnetic anisotropy. The rotational scans of the in-plane transverse SMR at 20 K exhibit substantial hysteresis about [100], while no hysteresis is observed along [110] and [1$\bar{1}$0], indicating a biaxial anisotropy with easy axes along [110] and [1$\bar{1}$0]. Furthermore, the absence of sharp discontinuities in both the in-plane longitudinal and transverse SMR, together with pronounced discontinuities near the in-plane [010] direction during out-of-plane rotation, strongly indicates the presence of in-plane anisotropy. This behavior persists up to 120 K. The discrepancy between the bulk-sensitive magnetic measurements and the SMR response suggests that the Pt/CVO interface retains a magnetic anisotropy distinct from the bulk, highlighting the interfacial sensitivity of SMR. Additionally, the spin mixing conductance is found to be of the order of $10^{14}$ $Ω^{-1}\mathrm{m}^{-2}$, comparable to other oxide-based spintronic systems. These findings highlight the crucial role of interfacial effects in spin transport and establish Pt/CVO as a promising platform for spintronic applications.

cond-mat.str-el

Band Structure of Topological Insulator BiSbTe1.25Se1.75

We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in this compound. We find that the SSBs, which are are sensitive to the atomic composition of the terminating surface have a partial 3D character. Our detailed study of the band bending (BB) effects shows that in BSTS the Dirac point (DP) shifts by more than two times compared to that in Bi2Se3 to reach the saturation. The stronger BB in BSTS could be due to the difference in screening of the surface charges. From momentum density curves (MDCs) of the ARPES data we obtained an energy dispersion relation showing the warping strength of the Fermi surface in BSTS to be intermediate between those found in Bi2Se3 and Bi2Te3 and also to be tunable by controlling the ratio of chalcogen/pnictogen atoms. Our experiments also reveal that the nature of the BB effects are highly sensitive to the exposure of the fresh surface to various gas species. These findings have important implications in the tuning of DP in TIs for technological applications.

cond-mat.mtrl-sci

Observation of Dirac-like surface state bands on the top surface of BiSe

Two quintuple layers of strong topological insulator Bi2Se3 are coupled by a Bi bilayer in BiSe crystal. We investigated its electronic structure using angle resolved photoelectron spectroscopy to study its topological nature. Dirac like linearly dispersive surface state bands are observed on the 001 surface of BiSe and Sb doped BiSe, similar to Bi2Se3. Moreover, the lower part of the SSBs buries deep in the bulk valence band. Overlap region between the SSBs and BVB is large in Sb doped system and the SSBs deviate from the Dirac like linear dispersion in this region. These results highlight the role of interlayer coupling between the Bi bilayer and the Bi2Se3 QLs. Furthermore, we observed a large intensity imbalance in the SSBs located at the positive and negative k parallel directions. This asymmetry pattern gradually reverses as the excitation energy scans from low 14eV to high 34eV value. However, we did not observe signal of surface magnetization resulting from the intensity imbalance in SSBs due to hole-generated uncompensated spin accumulation in the photoexcitation process. The main reason for this could be the faster relaxation process for photo hole due to the presence of the Bi bilayer between the adjacent Bi2Se3 QLs. The observed photon energy dependent intensity variation could be a signature of the mixing between the spin and the orbit texture of the SSBs.

cond-mat.mtrl-sci

Simple 4-segment thermal cycling pyroelectric measurement protocol for differentiating between ferroelectric and non-ferroelectric materials

The rare-earth chromates (RECrO$_3$) and manganites (REMnO$_3$) where, RE = Eu, Y, Dy, Ho, Gd are constantly under scrutiny in search of room temperature magnetoelectric multiferroics. However, the artefacts and undesirable signal in some of the measurements pose a severe challenge in confirming the ferroelectric (FE) phase, especially in reference to pyroelectric current measurement technique. In this regard, we propose a simple modified approach to pyroelectric current measurement named as 4-segment thermal cycling protocol. This protocol assists in isolating the elusive, irreversible thermally stimulated current from the currents associated with spontaneous and reversible nature of the electric polarization in FE phase. In order to explain working principle of the protocol, we have compared simulated response of two hypothetical materials; an FE material free of space charges and a paraelectric material possessing only space charges. Further, we experimentally verify these new protocols in a single crystal of prototype ferroelectric material, Glycine Phosphite. This report primarily focuses on detailed investigation of ferroelectricity using the proposed protocol in two polycrystalline materials, HoCrO$_3$ and DyFe$_{0.5}$Mn$_{0.5}$O$_3$ where, the former has been reported to be multiferroic earlier. Our elaborative and careful approach to pyroelectric studies expound on the absence of reversible spontaneous electric polarization at temperature ranges tested in both, HoCrO$_3$ and DyFe$_{0.5}$Mn$_{0.5}$O$_3$.

cond-mat.mtrl-sci

Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids

We present spin transport studies on a low-field, room-temperature magnetoelectric multiferroic polycrystalline $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}$ (SCFO)|Pt heterostructure wherein a highly tunable transverse conical magnetic phase is responsible for static and dynamic magnetoelectric coupling. We measured angular dependence of spin Hall magnetoresistance (SMR) at constant magnetic fields ($H$) in the range of 50 to 100 kOe. Application of field below the critical value (2.5 kOe), yielded negative SMR and the $H$-evolution of normalized SMR exhibited a negative gradient. Further, an increase in the $H$ resulted in the positive slope of normalized SMR Vs. $H$ and later at higher $H$ around 14 kOe, a crossover from negative to positive SMR was observed. We employed a simple model for estimating the equilibrium magnetic configuration and computed the SMR modulation at various values of $H$. We argue that the tilting of the cone is dominant and in turn responsible for the observed nature of SMR below 2.5 kOe while, the closing of the cone-angle is pronounced at higher fields causing a reversal in sign of the SMR from negative to positive. Importantly, SMR experiments revealed that a change in the helicity with a reversal of the magnetic field has no influence on the observed SMR. Longitudinal spin Seebeck effect (LSSE) signal was measured to be 500 nV at 280 K, under application of thermal gradient, $ΔT = 23$ K and field, 60 kOe. The observed LSSE signal, originating from pure magnon spin current, showed a similar $H$-dependent behavior as that of the magnetization of SCFO. Our detailed spin transport studies on polycrystalline SCFO|Pt heterostructure demonstrate high tunability of the amplitude and the sign of the SMR, highlighting its potential for novel spintronic devices such as SMR-based spin valves and voltage-controlled spin transport devices.

cond-mat.mtrl-sci

Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance

Orthoferrites ($RE$FeO$_{3}$) containing rare-earth ($RE$) elements are 3D antiferromagnets (AFM) that exhibit characteristic weak ferromagnetism originating due to slight canting of the spin moments and display a rich variety of spin reorientation transitions in the magnetic field ($H$)-temperature ($T$) parameter space. We present spin Hall magnetoresistance (SMR) studies on a $b$-plate ($ac$-plane) of crystalline Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}|$Pt (HDFO$|$Pt) hybrid at various $T$ in the range, 11 to 300 K. In the room temperature $Γ_4(G_x, A_y, F_z)$ phase, the switching between two degenerate domains, $Γ_4(+G_x, +F_z)$ and $Γ_4(-G_x, -F_z)$ occurs at fields above a critical value, $H_{\text{c}} \approx 713$ Oe. Under $H > H_{\text{c}}$, the angular dependence of SMR ($α$-scan) in the $Γ_4(G_x, A_y, F_z)$ phase yielded a highly skewed curve with a sharp change (sign-reversal) along with a rotational hysteresis around $a$-axis. This hysteresis decreases with an increase in $H$. Notably, at $H < H_{\text{c}} $, the $α$-scan measurements on the single domain, $Γ_4(\pm G_x, \pm F_z)$ exhibited an anomalous sinusoidal signal of periodicity 360 deg. Low-$T$ SMR curves ($H$ = 2.4 kOe), showed a systematic narrowing of the hysteresis (down to 150 K) and a gradual reduction in the skewness (150 to 52 K), suggesting weakening of the anisotropy possibly due to the $T$-evolution of Fe-$RE$ exchange coupling. Below 25 K, the SMR modulation showed an abrupt change around the $c$-axis, marking the presence of $Γ_2(F_x,C_y,G_z)$ phase. We have employed a simple Hamiltonian and computed SMR to examine the observed skewed SMR modulation. In summary, SMR is found to be an effective tool to probe magnetic anisotropy as well as a spin reorientation in HDFO. Our spin-transport study highlights the potential of HDFO for future AFM spintronic devices.

cond-mat.mtrl-sci

Emulation of Synaptic Plasticity on Cobalt based Synaptic Transistor for Neuromorphic Computing

Neuromorphic Computing (NC), which emulates neural activities of the human brain, is considered for low-power implementation of artificial intelligence. Towards realizing NC, fabrication, and investigations of hardware elements such as synaptic devices and neurons are essential. Electrolyte gating has been widely used for conductance modulation by massive carrier injections and has proven to be an effective way of emulating biological synapses. Synaptic devices, in the form of synaptic transistors, have been studied using a wide variety of materials. However, studies on metallic channel based synaptic transistors remain vastly unexplored. Here, we have demonstrated a three-terminal cobalt-based synaptic transistor to emulate biological synapse. We realized gating controlled multilevel, nonvolatile conducting states in the proposed device. The device could successfully emulate essential synaptic functions demonstrating short-term and long-term plasticity. A transition from short-term memory to long-term memory has been realized by tuning gate pulse amplitude and duration. The crucial cognitive behavior viz., learning, forgetting, and relearning, has been emulated, showing resemblance to the human brain. Along with learning and memory, the device showed dynamic filtering behavior. These results provide an insight into the design of metallic channel based synaptic transistors for neuromorphic computing.

cond-mat.mtrl-sci

Evidence for weak antilocalization-weak localization crossover and metal-insulator transition in CaCu$_{3}$Ru$_{4}$O$_{12}$ thin films

Artificial confinement of electrons by tailoring the layer thickness has turned out to be a powerful tool to harness control over competing phases in nano-layers of complex oxides. We investigate the effect of dimensionality on transport properties of $d$-electron based heavy-fermion metal CaCu$_{3}$Ru$_{4}$O$_{12}$. Transport behavior evolves from metallic to localized regime upon reducing thickness and a metal insulator transition is observed below 3 nm film thickness for which sheet resistance crosses $h/e^{2} \sim 25~$k$Ω$, the quantum resistance in 2D. Magnetotransport study reveals a strong interplay between inelastic and spin-orbit scattering lengths upon reducing thickness, which results in weak antilocalization (WAL) to weak localization (WL) crossover in magnetoconductance.

cond-mat.str-el

Effect of microstructure on the electronic transport properties of epitaxial CaRuO$_3$ thin films

We have carried out extensive comparative studies of the structural and transport properties of CaRuO$_3$ thin films grown under various oxygen pressure. We find that the preferred orientation and surface roughness of the films are strongly affected by the oxygen partial pressure during growth. This in turn affects the electrical and magnetic properties of the films. Films grown under high oxygen pressure have the least surface roughness and show transport characteristics of a good metal down to the lowest temperature measured. On the other hand, films grown under low oxygen pressures have high degree of surface roughness and show signatures of ferromagnetism. We could verify that the low frequency resistance fluctuations (noise) in these films arise due to thermally activated fluctuations of local defects and that the defect density matches with the level of disorder seen in the films through structural characterizations.

cond-mat.str-el

$π$ phase difference between Hall oscillation and SdH oscillation and non trivial Berry Phase in a topological insulator

The quantum oscillation is an important probe for the detection of a topological insulator(TI) surface states by means of electrical transport since the Shubnikov-de Haas oscillations allow to extract the Berry Phase which is the key test to detect the topological surface states. Here we have extracted the non trivial Berry Phase of 1$\%$ Sn doped strong TI $Sb_2Te_2Se$. We observed oscillation in Hall resistance as well and showed that this does not arise neither from the dominance of the SdH on Hall data nor this is the precursor of quantum Hall effect, rather this happens due to the pinning of the Fermi Level. Also The Hall oscillation has exactly 180$^\circ$ phase difference from SdH oscillation and this phase shift is independent of the magnetic field strength. It is argued that this unusual phenomenon stems from the predominance of the intra Landau Level scattering over the inter Landau Level scattering and it depends on the strength of the scattering potential. Thus our work paves the way of understanding the physics of scattering via quantum oscillations.

cond-mat.mes-hall

Resolution of spin Hall and anisotropic magnetoresistance in Pt/EuO$_{1-x}$

We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance (AMR) could be extracted in the entire T-range, even above T_P, exhibiting two sign crossovers. We attribute its T-evolution to the rotation of easy axis direction from a high-T out-of-plane to a low-T in-plane orientation. In addition, considering MR contributions from the films' (111) texture and interface, we identify a T-window wherein the spin Hall effect induced spin Hall magnetoresistance (SMR) could be extracted.

cond-mat.mes-hall

Signatures of Topological Superconductivity in Bulk Insulating Topological Insulator BiSbTe$_{1.25}$Se$_{1.75}$ in Proximity with Superconducting NbSe$_2$

The combination of superconductivity and spin-momentum locking at the interface between an s-wave superconductor and a three-dimensional topological insulator (3D-TI) is predicted to generate exotic p-wave topological superconducting phases that can host Majorana fermions. However, large bulk conductivities of previously investigated 3D-TI samples and Fermi level mismatches between 3D bulk superconductors and 2D topological surface states have thwarted significant progress. Here we employ bulk insulating topological insulators in proximity with two-dimensional superconductor NbSe$_2$ assembled via Van der Waals epitaxy. Experimentally measured differential conductance yields unusual features including a double-gap spectrum, an intrinsic asymmetry that vanishes with small in-plane magnetic fields and differential conductance ripples at biases significantly larger than the superconducting gap. We explain our results on the basis of proximity induced superconductivity of topological surface states, while also considering possibilities of topologically trivial superconductivity arising from Rashba-type surface states. Our work demonstrates the possibility of obtaining p-wave superconductors by proximity effects on bulk insulating TIs.

cond-mat.mes-hall

Role of spin mixing conductance in determining thermal spin pumping near the ferromagnetic phase transition in EuO_{1-x} and La2NiMnO6

We present a comprehensive study of the temperature (T) dependence of the longitudinal spin Seebeck effect (LSSE) in Pt/EuO_{1-x} and Pt/La2NiMnO6 (LNMO) hybrid structures across their Curie temperatures (Tc). Both systems host ferromagnetic interaction below Tc, hence present optimal conditions for testing magnon spin current based theories against ferrimagnetic YIG. Notably, we observe an anomalous Nernst effect (ANE) generated voltage in bare EuO_{1-x}, however, we find LSSE predominates the thermal signals in the bilayers with Pt. The T-dependence of the LSSE in small T-range near Tc could be fitted to a power law of the form (Tc-T)^P. The derived critical exponent, P, was verified for different methods of LSSE representation and sample crystallinity. The results are explained based on the magnon-driven thermal spin pumping mechanism that relate the T-dependence of LSSE to the spin mixing conductance (Gmix) at the heavy metal/ferromagnet (HM/FM) interface, which in turn is known to vary in accordance with the square of the spontaneous magnetization (Ms). Additionally, the T-dependence of the real part of Gmix derived from spin Hall magnetoresistance measurements at different temperatures for the Pt/LNMO structure, further establish the interdependence.

cond-mat.mes-hall

Quantum spin liquids by geometric lattice design

On a lattice composed of triangular plaquettes where antiferromagnetic exchange interactions between localized spins cannot be simultaneously satisfied, the system becomes geometrically frustrated with magnetically disordered phases remarkably different from a simple paramagnet. Spin liquid belongs to one of these exotic states, in which a macroscopic degeneracy of the ground state gives rise to the rich spectrum of collective phenomena. Here, we report on the discovery of a new magnetic state in the heterostructures derived from a single unit cell (111)-oriented spinel CoCr2O4 sandwiched between nonmagnetic Al2O3 spacers. The artificial quasi-two-dimensional material composed of three triangle and one kagome atomic planes shows a degree of magnetic frustration which is almost two orders of magnitude enlarged compared to the bulk crystals. Combined resonant X-ray absorption and torque magnetometry measurements confirm that the designer system exhibits no sign of spin ordering down to 30 mK, implying a possible realization of a quantum spin liquid state in the two dimensional limit.

cond-mat.str-el

Spatially varying electronic dephasing in three dimensional topological insulators

Information processing devices operating in the quantum mechanical regime strongly rely on the quantum coherence of charge carriers. Studies of electronic dephasing in conventional metallic and semiconductor systems have not only paved the way towards high coherence quantum electronics, but also led to fundamental new insights in condensed matter physics. In this work, we perform a spatially resolved study of electronic dephasing in three dimensional topological insulators by exploiting an edge versus surface contacted measurement scheme. Unlike conventional two dimensional systems that are characterized by a single dephasing mechanism, we find that dephasing in our samples evolves from a variable-range-hopping type mechanism on the sample surface to a Nyquist type electron-electron interaction mechanism in the sub-surface layers. This is confirmed independently by the temperature and chemical potential dependence of the dephasing length, and gate dependent suppression/enhancement of the weak anti-localization effect. Our devices are fabricated using bulk insulating topological insulator BiSbTe$_{1.25}$Se$_{1.75}$ capped with hexagonal-Boron Nitride in an inert environment, ruling out any extrinsic effects and confirming the topological surface state origin of our results. Our work introduces the idea of spatially resolved electronic dephasing and reveals a new regime of coherent transport in perhaps the most important topological insulator discovered so far. Our edge-vs-surface scheme may be applied to dephasing studies in a wide class of 2D materials.

cond-mat.mes-hall

The effect of Sn intercalation on the superconducting properties of 2H-NbSe2

2H-NbSe2 is known to be an archetype layered transitional metal dichalcogenide superconductor with a superconducting transition temperature of 7.3 K.In this article, we investigate the influence of Sn intercalation on superconducting properties of 2H-NbSe2. Sn being nonmagnetic and having no outer shell d-electrons unlike transition metals, one naively would presume that its effect on superconducting properties will be very marginal. However, our magnetic and transport studies reveal a significant reduction of both superconducting transition temperature and upper critical field [Tc and BC2 (0)] upon Sn intercalation. With a mere 4 mole% Sn intercalation, it is observed that Tc and BC2 (0) get suppressed by ~ 3.5 K and 3 T, respectively. Werthamer-Helfand-Hohenberg (WHH) analysis of magneto-transport data is performed to estimate BC2 (0). From the low temperature Raman scattering data in the normal phase of intercalated NbSe2, it is inferred that the suppression of superconductivity cannot be ascribed to strengthening of charge density wave (CDW)ordering. The effects such as electron-doping induced Fermi surface change and/or disorder scattering upon intercalation are speculated to be at play for the observed phenomena.

cond-mat.supr-con

Unconventional exchange bias coupling at perovskite/brownmillerite interface in spontaneously stabilized SrCoO3-δ/SrCoO2.5 bi-layer

Interface effect in complex oxide thin film heterostructures lies at the vanguard of current research to design technologically relevant functionality and explore emergent physical phenomena. While most of the previous works focus on the perovskite/perovskite heterostructures, the study on perovskite/brownmillerite interfaces remain at its infancy. Here, we investigate spontaneously stabilized perovskite-ferromagnet (SrCoO3-δ)/brownmillertite-antiferromagnet (SrCoO2.5) bi-layer with TN > TC and discover an unconventional interfacial magnetic exchange bias effect. From magnetometry investigations, it is rationalized that the observed effect stems from the interfacial ferromagnet/antiferromagnet coupling. The possibility for coupled ferromagnet/spinglass interface engendering such effect is ruled out. Strikingly, a finite coercive field persists in the paramagnetic state of SrCoO3-δ whereas the exchange bias field vanishes at TC. We conjecture the observed effect to be due to the effective external quenched staggered field provided by the antiferromagtic layer for the ferromagnetic spins at the interface. Our results not only unveil a new paradigm to tailor the interfacial magnetic properties in oxide heterostructures without altering the cations at the interface, but also provide a purview to delve into the fundamental aspects of exchange bias in such unusual systems paving a big step forward in thin film magnetism.

cond-mat.mtrl-sci