arXiv subjects

P. Srivastava

Publications and source records attributed to P. Srivastava.

10 recordsLinked to original sources

arXiv2018

Highly enhanced field emission current density of copper oxide coated vertically aligned carbon nanotubes: Role of interface and electronic structure

We report the field emission (FE) properties of Cu coated vertically aligned carbon nanotubes (VACNTs) before and after oxidation. The current density was found to be the maximum (20 mA/cm$^2$) for 3 nm thick Cu coated VACNTs after oxidation. The variation in conventionally monitored parameters like work function and field enhancement factor does not explain the experimentally determined FE current density. A critical analysis of the electronic structure reveals the importance of presence of Cu$_2$O at the interface of CuO and VACNTs, which in turn controls the current density of these films. The highly enhanced FE current density of 3 nm Cu coated VACNTs after oxidation suggests its potential as a next generation electron source in vacuum microelectronic devices.

physics.app-ph↗

arXiv2018

Angle dependent localized surface plasmon resonance from silver nanoparticles embedded in SiO2 thin film

Near surface silver nanoparticles embedded in silicon oxide were obtained by 40 keV silver negative ion implantation without the requirement of an annealing step. Ion beam induced local heating within the film leads to an exo-diffusion of the silver ions towards the film surface resulting in the protrusion of larger nanoparticles. Cross-sectional transmission electron microscopy (XTEM) reveals the presence of poly-disperse nanoparticles (NPs), ranging between 2 nm-20 nm, at different depths of the SiO2 film. The normal incidence reflectance spectrum shows a double kink feature in the vicinity of 400nm, indicating a strong localized surface plasmon resonance (LSPR) from the embedded NPs. However, due to overlap of the bilayer interference and LSPR, the related features are difficult to separate. The ambiguity in associating the correct kink with the LSPR related absorption is cleared with the use of transfer matrix simulations in combination with an effective medium approximation. The simulations are further verified with angle dependent reflectance measurements. Additionally, transfer matrix simulation is also used to calculate the electric field intensity profile through the depth of the film, wherein an enhanced electric field intensity is predicted at the surface of the implanted films.

physics.app-ph↗

arXiv2017

Hydrogen loss and its improved retention in hydrogen plasma treated a-SiNx:H films: ERDA study with 100 MeV Ag7+ ions

Hydrogen loss from a-SiNx:H films under irradiation with 100 MeV Ag7+ ions using elastic recoil detection analysis (ERDA) experiments is reported. The results are explained under the basic assumptions of the molecular recombination model. The ERDA hydrogen counts are composed of two distinct hydrogen desorption processes, limited by rapid molecular diffusion in the initial stages of irradiation, and as the fluence progresses a slow process limited by diffusion of atomic hydrogen takes over. Which of the aforesaid processes dominates, is determined by the continuously evolving Hydrogen concentration within the films. The ERDA measurements were also carried out for films treated with low temperature (300 degrees centigrade) hydrogen plasma annealing (HPA). The HPA treated films show an improved diffusion of atomic hydrogen, resulting from healing of weak bonds and passivation of dangling bonds. Further, upon HPA, films also show evolution of hydrogen with significantly higher counts, at advanced fluences, relative to the as-deposited films. These results indicate the potential of HPA towards improved H retention in a-SiNx:H films. The study distinguishes clearly the presence of two diffusion processes in a-SiNx:H whose diffusion rates differ by an order of magnitude, with hydrogen radicals not being able to diffuse beyond ~1 nm from the point of their creation. The results are very relevant for the passivation applications of a-SiNx:H

physics.app-ph↗

arXiv2017

Nature of Magnetoelectric coupling in corundum antiferromagnet Co4Ta2O9

We study the magnetocapacitance (MC) effect and magnetoelectric (ME) coupling in spin-flop driven antiferromagnet Co4Ta2O9. The magnetocapacitance data at high magnetic fields are analyzed by phenomenological Ginzburg-landau theory of ferroelectromagnets and it is found that change in dielectric constant is proportional to the square of magnetization. The saturation polarization and magnetoelectric coupling are estimated to be 52microC/m2 and $γ$ = 1.4 x10-3 (emu/g)-2 respectively at 6 Tesla. Electric polarization is achieved below Neel temperature only when the sample is cooled in the presence of magnetic field and it is established that the ground state is non-ferroelectric implying that magnetic lattice does not lead to spontaneous symmetry breaking in Co4Ta2O9.

cond-mat.mtrl-sci↗

arXiv2016

Exceptional magneto-electric coupling and spontaneous electric polarization in anti-ferromagnet Co4Nb2O9

Synthesis and extensive structural, pyroelectric, magnetic, dielectric and magneto-electric characterizations are reported for polycrystalline Co4Nb2O9 towards unraveling the multiferroic state especially in reference to the magnetic spin flop transition. Magnetic measurements confirm the Co4Nb2O9 becomes antiferromagnetic (AFM) at around 28 K but no clear evidence for spin-flop effect was found. Associated with the magnetic phase transition, a sharp peak in pyroelectric current indicates the appearance of the strong magneto-electric coupling below Neel temperature (TN) with a large coupling constant upto 17.8 uC/m^2T. Using temperature oscillation technique, we establish Co4Nb2O9 to be a genuine multiferroic with spontaneous electric polarization in the anti-ferromagnetic state.

cond-mat.mtrl-sci↗

arXiv2015

Improved superconducting properties of skutterudite La3Co4Sn13 with indium substitution

We report on two fold increase in superconducting transition temperature of La3Co4Sn13 by substituting indium at the tin site. The transition temperature of this skutterudite is observed to increase from 2.5 K to 5.1 K for 10 % indium substituted sample. The band structure and density of states calculations also indicate such a possibility. The compounds exhibit type - II superconductivity and the values of lower critical field (Hc1), upper critical field (Hc2), Ginzburg - Landau coherence length , penetration depth and GL parameter are estimated to be 0.0028 T, 0.68 T, 21.6 nm, 33.2 nm and 1.53 respectively for La3 Co4Sn11.7In1.3. Hydrostatic external pressure leads to decrease in transition temperature and the calculated pressure coefficient is -0.311 K/GPa . Flux pinning and vortex activation energies also improved with indium addition. Only positive frequencies are observed in phonon dispersion curve that relate to the absence of charge density wave or structural instability in the normal state.

cond-mat.supr-con↗

arXiv2015

Superconductivity by Sr Intercalation in Layered Topological Insulator Bi2Se3

Strontium intercalation between van der Waals bonded layers of topological insulator Bi2Se3 is found to induce superconductivity with a maximum Tc of 2.9 K. Transport measurement on single crystal of optimally doped sample Sr0.1Bi2Se3 shows weak anisotropy (1.5) and upper critical field Hc2(0) equals to 2.1 T for magnetic field applied per-pendicular to c -axis of the sample. The Ginzburg-Landau coherence lengths are Xi-ab = 15.3 Å and Xi_c = 10.2 Å. The lower critical field and zero temperature penetration depth Lambda(0) are estimated to be 0.35 mT and 1550 nm respectively. Hall and Seebeck measurements confirm the dominance of electronic conduction and the carrier concentration is surprisingly low (n = 1.85 x 10^19 cm-3) at 10 K indicating possibility of unconventional superconductivity.

cond-mat.supr-con↗

arXiv2014

Electromagnetic Properties of Topological Crystalline Superconductor Sn0.5In0.5Te

We report on the superconducting properties of In doped SnTe which has recently been explored as a topological crystalline superconductor. Single crystals of Sn0.5In0.5Te have been synthesized by modified Bridgman method. Resistivity measurement performed in the range 1.6K to 300K shows metallic normal state with onset of superconducting transition at Tc = 4.5K. Bulk superconductivity has also been confirmed by DC magnetization, AC susceptibility and rf penetration depth measurements. The zero temperature upper critical field, lower critical field, coherence length, penetration depth are estimated to be 1.6T, 10Oe, 143.5 Å and 832nm respectively. Temperature dependence of low temperature penetration depth indicates S-wave fully gapped characteristics with BCS gap meV. Hall and Seebeck coefficient measurements confirm dominance of hole conduction with possible phonon-drag effects around ~45K. Resistive transition studied under the applied magnetic field shows thermally activated flux flow behavior.

cond-mat.supr-con↗

arXiv2013

Strain energy calculations of hexagonal boron nanotubes: An ab-initio approach

An ab initio calculations have been carried out for examining the curvature effect of small diameter hexagonal boron nanotubes. The considered conformations of boron nanotubes are namely armchair (3,3), zigzag (5,0) and chiral (4,2), and consist of 12, 20, and 56 atoms, respectively. The strain energy is evaluated in order to examine the curvature effect. It is found that the strain energy of hexagonal BNT strongly depends upon the radius, whereas the strain energy of triangular BNTs depends on both radius and chirality.

cond-mat.mes-hall↗

arXiv2013

Evidence for Fully Gapped Strong Coupling S-wave Superconductivity in Bi4O4S3

We report on the superconducting gap and pairing symmetry in layered superconductor Bi4O4S3. The measurement of temperature dependence of magnetic penetration depth was carried out using tunnel diode oscillator technique. It is observed that Bi4O4S3 is a conventional s-wave type superconductor with fully developed gap. The zero-temperature value of the superconducting energy gap Δ0 was found to be 1.54 meV, corresponding to the ratio 2Δ0/kBTc=7.2 which is much higher than the BCS value of 3.53. In the superconducting range, superfluid density is very well described by single gap s- wave model.

cond-mat.supr-con↗