P. Taivansaikhan | Searcharxiv

arXiv2019

Tunability of Magnetic Anisotropy of Co on Two-Dimensional Materials by Tetrahedral Bonding

Pairing of $π$ electronic state structures with functional or metallic atoms makes them possible to engineer physical and chemical properties. Herein, we predict the reorientation of magnetization of Co on hexagonal BN (h-BN) and graphene multilayers. The driving mechanism is the formation of the tetrahedral bonding between sp$^3$ and d orbitals at the interface. More specifically, the intrinsic $π$-bonding of h-BN and graphene is transformed to sp$^3$ as a result of strong hybridization with metallic $d_{z^2}$ orbital. The different features of these two tetrahedral bondings, sp$^2$ and sp$^3$, are well manifested in charge density and density of states in the vicinity of the interface, along with associated band structure near the $\bar{K}$ valley. Our findings provide a novel approach to tailoring magnetism by means of degree of the interlayer hybrid bonds in 2D layered materials.

cond-mat.mtrl-sci↗

arXiv2017

Inducing and Manipulating Magnetization in Two-Dimensional ZnO by Strain and External Gating

Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In contrast to the pristine and defective ZnO with an O-vacancy, the presence of a Zn-vacancy induces significant magnetic moments to its first neighboring O and Zn atoms due to the charge deficit. We further predict that the direction of magnetization easy axis reverses from an in-plane to perpendicular orientation under a practically achieved biaxial compressive strain of $\sim$1--2\% or applying an electric-field by means of the charge density modulation. This magnetization reversal is driven by the strain- and electric-field-induced changes in the spin-orbit coupled \emph{d} states of the first-neighbor Zn atom to the Zn-vacancy. These findings open interesting prospects for exploiting strain and electric-field engineering to manipulate magnetism and magnetization orientation of two-dimensional materials.

physics.comp-ph↗