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Panagiotis Koutsogiannis

Publications and source records attributed to Panagiotis Koutsogiannis.

2 recordsLinked to original sources

Alternative origins of polarity in compressively strained SrTiO3-RENiO3 capacitors

Since its original prediction 25 years ago, room-temperature out-of-plane ferroelectricity in compressively strained SrTiO3 remains an ongoing pursuit. In this work, we investigate the structural, electrical and electromechanical properties of highly strained epitaxial SrTiO3 capacitors with rare earth nickelate electrodes. The SrTiO3 layers experience compressive strains up to -3% and exhibit pronounced tetragonality, comparable to that of bulk PbTiO3. Variable-temperature electrical measurements and room-temperature piezoresponse force microscopy reveal butterfly-shaped capacitance-voltage hysteresis and domain-like electromechanical response typical of ferroelectric materials. However, the overall behavior is inconsistent with a stable ferroelectric state. We therefore propose an alternative mechanism for the observed polarity in our samples based on spatially inhomogeneous internal fields. Our first-principles calculations show that such fields may arise from charge discontinuities between the formally charged NdNiO3 layers and charge-neutral SrTiO3 layers.

cond-mat.mtrl-sci↗

Strong substrate influence on atomic structure and properties of epitaxial VO2 thin films

The metal-insulator transition (MIT) observed in vanadium dioxide (VO2) has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and structures involved. The ability to understand and tune the MIT behaviour is of vital importance from the perspective of both underlying fundamental science as well as potential applications. In this work, we use scanning transmission electron microscopy (STEM) to investigate cross-section lamella of the VO2 films deposited using pulsed laser deposition (PLD) on three substrates: c-cut sapphire, TiO2(101) and TiO2(001). Advanced STEM imaging is performed in which also the oxygen atom columns are resolved. We link the overall film quality and structures on atomic and nanoscale to the electrical transition characteristics. We observe poor MIT characteristics on c-sapphire due to the presence of very small domains with six orientation variants, and on TiO2 (001) due to the presence of cracks induced by stress relaxation. However, the MIT on TiO2 (101) behaves favourably, despite similar stress relaxation which, however, only lead to domain boundaries but no cracks.

cond-mat.mtrl-sci↗