arXiv subjects

Panaiot G. Zotev

Publications and source records attributed to Panaiot G. Zotev.

9 recordsLinked to original sources

arXiv2025

Exciton-polaritons in a monolayer semiconductor coupled to van der Waals dielectric nanoantennas on a metallic mirror

Polaritons in nanophotonic structures have attracted long-standing interest owing to their fundamental importance and potential for applications in nonlinear and quantum optics. Nanoantennas (NAs) made from high refractive index dielectrics offer a suitable platform for polariton physics thanks to the strongly confined optical Mie resonances and low optical losses in contrast to metallic NAs. However, Mie modes are mainly confined within the NA, making inefficient their coupling with excitons in materials deposited externally. Here, we overcome this limitation by using a high-refractive index van der Waals material WS$_2$, which allows straightforward fabrication of NAs on gold. The combination of a 27 nm tall WS$_2$ NA and a gold substrate enables strong modification of the Mie mode distribution and field enhancement inside and in the vicinity of the NA. This allows observation of room-temperature Mie-polaritons (with a Rabi splitting above 80 meV) arising from the strong coupling between Mie modes and the exciton in a monolayer WSe$_2$ placed on WS$_2$/gold NAs. We demonstrate strong nonlinearity of Mie-polaritons, one order of magnitude higher than for excitons in monolayer WSe$_2$ on gold. Our results highlight applicability of van der Waals materials for the realisation of hybrid dielectric-metallic nanophotonics for the study of the strong light-matter interaction.

physics.optics↗

arXiv2025

Fabrication of ultra-smooth, high-aspect ratio, sub-10 nanometer nanostructures

Deterministic and versatile approaches to sample preparation on nanoscopic scales are important in many fields including photonics, electronics, biology and material science. However, challenges exist in meeting many nanostructuring demands--particularly in emerging optical materials and component architectures. Here, we report a nanofabrication workflow that overcomes long-standing challenges in deterministic and top-down sample preparation procedures. The salient feature is a carbon mask with a low sputter yield that can be readily shaped using high resolution electron beam processing techniques. When combined with focused ion beam processing, the masking technique yields structures with ultra-smooth, near-vertical side walls. We target different material platforms to showcase the broad utility of the technique. As a first test case, we prepared nanometric gaps in evaporated Au. Gap widths of 7 plus/minus 2 nm, aspect ratios of 17, and line edge roughness values of 3sigma = 2.04 nm are achieved. Furthermore, the gap widths represent an order of magnitude improvement on system resolution limits. As a second test case, we designed and fabricated dielectric resonators in the ternary compounds MnPSe3 and NiPS3; a class of van der Waals material resistant to chemical etch approaches. Nanoantenna arrays with incrementally increasing diameter were fabricated in crystalline, exfoliated flakes. The optical response was measured by dark field spectroscopy and is in agreement with simulations. The workflow reported here leverages established techniques in material processing without the need for custom or specialized hardware. It is broadly applicable to functional materials and devices, and extends high speed focused ion beam milling to true sub-10 nm length scales.

physics.optics↗

arXiv2024

Simultaneous observation of bright and dark polariton states in subwavelength gratings made from quasi-bulk WS$_2$

Over the last decade, layered crystals, dubbed van der Waals (vdW) materials, have attracted tremendous interest due to their unique properties in their single and few layer regimes. Their bulk counterparts, however, have only been recently explored as building blocks for nanophotonics as they offer promising properties such as high refractive indices and adherence to any type of substrates. We present here a variety of 1D grating structures composed of bulk transition metal dichalcogenide (TMD) WS$_2$ as a highly tunable and versatile platform for observation of multi-level polaritonic system. The WS$_2$ excitons are simultaneously strongly coupled with the two grating photonic modes including the Bound State in the Continuum (BIC) of the lower energetic mode giving rise to polariton-BICs (pol-BICs). The polaritonic dispersion shapes can be varied in a straightforward fashion by choosing WS$_2$ films of different thicknesses and by changing the period of the grating.

physics.optics↗

arXiv2024

Single photon emitters in monolayer semiconductors coupled to transition metal dichalcogenide nanoantennas on silica and gold substrates

Transition metal dichalcogenide (TMD) single photon emitters (SPEs) offer numerous advantages to quantum information applications, such as high single photon purity and deterministic positioning. Strain in the host monolayer, induced by underlying dielectric Mie resonators, is known to localize their formation to positions co-located with near-field photonic hotspots providing further control over their optical properties. However, traditional materials used for the fabrication of nanoresonators, such as silicon or gallium phosphide (GaP), often require a high refractive index substrate resulting in losses of the emitted light and limited photonic enhancement. Here, we use nanoantennas (NAs) fabricated from multilayer TMDs, which allow complete flexibility with the choice of substrate due to the adhesive van der Waals forces, enabling high refractive index contrast or the use of highly reflective metallic surfaces. We demonstrate the localized formation of SPEs in WSe$_2$ monolayers transferred onto WS$_2$ NAs on both SiO$_2$ and Au substrates, enabling strong photonic enhancements and increased single photon collection. We provide evidence for enhanced quantum efficiencies (QE) reaching an average value of 43% (7%) for SPEs on WS$_2$ NAs on a SiO$_2$ (Au) substrate. We further combine the advantages offered by both dielectric and metallic substrates to numerically simulate an optimized NA geometry for maximum WSe$_2$ single photon excitation, emission, collection. Thus, the fluorescence is enhanced by a factor of over 4 orders of magnitude compared to vacuum and 5 orders of magnitude compared to a flat SiO$_2$/Si surface. Our work showcases the advantages offered by employing TMD material nanoresonators on various substrates for SPE formation and photonic enhancement.

cond-mat.mes-hall↗

arXiv2023

Van der Waals Nanoantennas on Gold as Hosts for Hybrid Mie-Plasmonic Resonances

Dielectric nanoresonators have been shown to circumvent the heavy optical losses associated with plasmonic devices, however they suffer from less confined resonances. By constructing a hybrid system of both dielectric and metallic materials, one can retain the low losses of dielectric resonances, whilst gaining additional control over the tuning of the modes with the metal, and achieving stronger mode confinement. In particular, multi-layered van der Waals materials are emerging as promising candidates for integration with metals owing to their weak attractive forces, which enable deposition onto such substrates without the requirement of lattice matching. Here we use layered, high refractive index WS$_2$ exfoliated on gold, to fabricate and optically characterize a hybrid nanoantenna-on-gold system. We experimentally observe a hybridization of Mie resonances, Fabry-Pérot modes, and surface plasmon-polaritons launched from the nanoantennas into the substrate. We achieve experimental quality factors of Mie-plasmonic modes of up to 20 times that of Mie resonances in nanoantennas on silica, and observe signatures of a supercavity mode with a Q factor of 263 $\pm$ 28, resulting from strong mode coupling between a higher-order anapole and Fabry-Pérot-plasmonic mode. We further simulate WS$_2$ nanoantennas on gold with an hBN spacer, resulting in calculated electric field enhancements exceeding 2600, and a Purcell factor of 713. Our results demonstrate dramatic changes in the optical response of dielectric nanophotonic structures placed on gold, opening new possibilities for nanophotonics and sensing with simple-to-fabricate devices.

cond-mat.mes-hall↗

arXiv2022

Van der Waals Materials for Applications in Nanophotonics

Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5, pronounced birefringence up to $Δ$n = 3, sharp absorption resonances, and a range of transparency windows from ultraviolet to near-infrared. We then fabricate nanoantennas on SiO$_2$ and gold utilizing the compatibility of vdW thin films with a variety of substrates. We observe pronounced Mie resonances due to the high refractive index contrast on SiO$_2$ leading to a strong exciton-photon coupling regime as well as largely unexplored high-quality-factor, hybrid Mie-plasmon modes on gold. We demonstrate further vdW-material-specific degrees of freedom in fabrication by realizing nanoantennas from stacked twisted crystalline thin-films, enabling control of nonlinear optical properties, and post-fabrication nanostructure transfer, important for nano-optics with sensitive materials.

physics.optics↗

arXiv2021

Transition metal dichalcogenide dimer nano-antennas with ultra-small gaps

Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS$_2$ double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structure. Using dark field spectroscopy, we reveal multiple Mie resonances, to which we couple WSe$_2$ monolayer photoluminescence and achieve Purcell enhancement and an increased fluorescence by factors up to 240. We introduce post-fabrication atomic force microscope repositioning and rotation of dimer nano-antennas, achieving gaps as small as 10$\pm$5 nm, opening the possibility to a host of potential applications including strong Purcell enhancement of single photon emitters and optical trapping, which we study in simulations. Our findings highlight the advantages of using transition metal dichalcogenides for nano-photonics by exploring new applications enabled by their unique properties.

physics.app-ph↗

arXiv2021

Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas

Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe$_2$ to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 10$^4$ times brighter photoluminescence than in WSe$_2$ placed on low-refractive-index SiO$_2$ pillars. We show that the key to these observations is the increase on average by a factor of 5 in the quantum efficiency of the emitters coupled to the nano-antennas. This further allowed us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors.

cond-mat.mes-hall↗

arXiv2021

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors

Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical and electronic properties of TMDs, for instance by depositing them on nano-structured surfaces, where position-dependent strain can be produced on the nano-scale. Here, we demonstrate strain-induced modifications of the optical properties of mono- and bilayer TMD WSe$_2 $ placed on photonic nano-antennas made from gallium phosphide (GaP). Photoluminescence (PL) from the strained areas of the TMD layer is enhanced owing to the efficient coupling with the confined optical mode of the nano-antenna. Thus, by following the shift of the PL peak, we deduce the changes in the strain in WSe$_2$ deposited on the nano-antennas of different radii. In agreement with the presented theory, strain up to $\approx 1.4 \%$ is observed for WSe$_2$ monolayers. We also estimate that $>3\%$ strain is achieved in bilayers, accompanied with the emergence of a direct bandgap in this normally indirect-bandgap semiconductor. At cryogenic temperatures, we find evidence of the exciton confinement in the most strained nano-scale parts of the WSe$_2$ layers, as also predicted by our theoretical model. Our results, of direct relevance for both dielectric and plasmonic nano-antennas, show that strain in atomically thin semiconductors can be used as an additional parameter for engineering light-matter interaction in nano-photonic devices.

cond-mat.mes-hall↗