Interface-induced spin-resolved type-II band alignment and enhanced magnetic anisotropy in MSe2/WTe2 (M = V, Cr, Mn, Fe and Co) van der Waals heterobilayers
Two-dimensional van der Waals heterobilayers provide an attractive platform for the development of next-generation spintronic devices. Here, first-principles calculations are performed to investigate the structural, electronic and magnetic properties of MSe2/WTe2 (M = V, Cr, Mn, Fe, and Co) van der Waals heterobilayers. The pristine WSe2/WTe2 heterobilayer in AA'-configuration is found to be energetically favorable and exhibits type-II band alignment with a band gap of 0.70 eV, and this provides an ideal platform for controlling carrier transport. Substituting W with 3d transition metal atoms, induces long-range magnetic ordering and reconstructs the spin-resolved electronic band structure. The formation of the heterointerface generates pronounced charge redistribution and an intrinsic built-in electric field, leading to interface-induced electronic reconstruction. MnSe2/WTe2 heterobilayer exhibits half-metallicity, whereas FeSe2/WTe2 heterobilayer simultaneously exhibits half-metallicity and spin-resolved type-II band alignment. Interfacial electronic reconstruction further produces a substantial perpendicular magnetic anisotropy, driving MnSe2 from an in-plane easy axis with MAE value of 1.10 meV in the isolated monolayer to a robust out-of-plane easy axis with MAE value of 20.8 meV in the heterobilayer. Among all the structures, CoSe2/WTe2 heterobilayer exhibits maximum Curie temperature (273.87 K). The combined results establish that interface engineering makes MSe2/WTe2 heterobilayers as a promising candidates for next-generation low-dimensional spintronic applications.