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Parikshit Sahatiya

Publications and source records attributed to Parikshit Sahatiya.

2 recordsLinked to original sources

Nonlinearity Selective Quasi Bound States in the Continuum via Symmetry Protected Decoupling in χ(2) Thin Films

Second-harmonic generation in resonant structures is commonly evaluated in terms of intracavity field enhancement at the fundamental and harmonic frequencies. Here, we formulate nonlinear frequency conversion within a symmetry-resolved overlap framework that explicitly separates resonant field buildup from nonlinear mode projection. Using a simple and analytically tractable Fabry--Perot thin-film-on-substrate geometry, we show that, even in the presence of spectrally bright resonances at both $ω$ and $2ω$, the emitted second-harmonic signal can be strongly suppressed when the spatial parity of the pump-induced nonlinear polarization is incompatible with that of the radiating $2ω$ standing-wave mode. This mechanism gives rise to nonlinearity-selective quasi-bound states in the continuum. Beyond providing a compact interpretation of these nonlinear dark states, the framework unifies pump enhancement, harmonic enhancement, and symmetry-controlled modal overlap within a single predictive metric. More broadly, it identifies thickness regimes in which resonant buildup is accompanied by constructive nonlinear coupling, and distinguishes them from regimes in which apparently favorable resonance conditions remain conversion-inactive because the nonlinear source is orthogonal to the radiating harmonic mode.

physics.optics

A High Responsivity Broadband Photodetector Based on a WSe2 NiO Nanowire Heterostructure with Engineered Nanophotonic Enhancement

Engineering nanoscale light matter interaction in mixed dimensional semiconductor heterostructures offers a pathway to mitigate the intrinsic gain bandwidth trade off in photodetectors. Here, we report a broadband, high responsivity 2D and 1D photodetector formed by integrating monolayer p type WSe2 with electrospun p type NiO nanowires. The device photoresponse spans 350 to 780 nm and is governed by a nanophotonic field confinement mechanism rather than bulk optical absorption. The high index NiO nanowire acts as a dielectric Mie type nanoresonator that supports geometry defined optical modes and produces antenna like near field concentration at the nanoscale WSe2 and NiO junction. This localized optical mode increases the local absorption cross section and enhances the photocarrier generation rate within the junction region, identified as the dominant active volume for photocurrent. A coupled optoelectronic model linking full wave electromagnetic simulations to carrier generation, recombination, and extraction accurately captures the measured responsivity spectrum and its power dependence using only two electronic fitting parameters. The device achieves responsivities of 627 A/W in the visible region, 227 A/W in the UV, and 167 A/W in the NIR, demonstrating broadband operation with ultrahigh gain. These results show that geometric resonance in mixed dimensional junctions is a powerful design principle for next generation high gain optoelectronic detectors.

physics.optics