arXiv subjects

Pascal David

Publications and source records attributed to Pascal David.

5 recordsLinked to original sources

arXiv2026

Antiferromagnetic stripe phase and large-gap insulating ground state of the correlated $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) single atomic layer

The one-third monolayer Sn layer on Si(111) has long been considered a benchmark system for exploring two-dimensional Mott physics, owing to its narrow bandwidth and sizable on-site Coulomb repulsion. Previous experiments suggested the emergence of a low-temperature Mott insulating phase with an energy gap of only a few tens of meV, while theory predicted a possible antiferromagnetic ordering that remained experimentally elusive. Here, by combining low-temperature scanning tunneling microscopy/spectroscopy with first-principles calculations, we reveal that the $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) surface undergoes a transition below 30K into a robust insulating state characterized by a remarkably large gap of about 440 $\pm$ 120 meV at 4K, five to ten times larger than previously reported. Quasiparticle interference imaging uncovers a well-defined $2\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) superstructure, providing direct evidence for a two-dimensional stripe-like antiferromagnetic order. Ab initio calculations reveal that the silicon substrate stabilizes this phase through strong nonlocal tin-tin interactions, highlighting the decisive role of substrate-driven correlations in the $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) system.

cond-mat.str-el↗

arXiv2025

Superconducting and spin-density wave phases probed by scanning tunneling spectroscopy in the organic conductor $\mathrm{(TMTSF)_{2}ClO_{4}}$

By scanning tunneling microscopy (STM) we have probed the local quasi-particle density of states (DOS) of the Bechgaard salt organic superconductor $\mathrm{(TMTSF)_{2}ClO_{4}}$ in slowly cooled single crystals cleaved under ultrahigh vacuum conditions. In well STM imaged crystallographic surface planes, the local DOS has been probed for different surface areas at temperatures above and below the critical temperature of superconducting or insulating spin-density wave states. While a rather homogeneous superconducting state is expected in the bulk from previous studies, depending on the degree of disorder introduced by cleavage in the anion lattice, an inhomogeneous granular state is predominantly observed at the surface. A pronounced linear V-shape profile of the local DOS is observed from intermediate to the lowest energy scale in the less disordered superconducting surface areas. This supports the existence of an unconventional d-wave like order parameter with nodes at low energy, which is preceded by more energetic fluctuations attributed to quantum criticality of the material. At higher energy disorder combined to correlations deplete further the DOS. By contrast a non-linear U-shape characterizes the local low energy DOS profile for the more disordered and insulating surface areas of the spin-density wave state. The experimental results are compared quantitatively with those predicted by the renormalization group theory of the quasi-one dimensional electron gas model and its description of the superconducting and spin-density wave states that are interlinked by quantum criticality in the Bechgaard salts.

cond-mat.supr-con↗

arXiv2024

Higher order topological defects in a moir\'e lattice

Topological defects are ubiquitous, they manifest in a wide variety of systems such as liquid crystals, magnets or superconductors. The recent quest for nonabelian anyons in condensed matter physics stimulates the interest for topological defects since they can be hosted in vortices in quantum magnets or topological superconductors. In addition to these vortex defects, in this study we propose to investigate edge dislocations in 2D magnets as new building blocks for topological physics since they can be described as vortices in the structural phase field. Here we demonstrate the existence of higher order topological dislocations within the higher order moir\'e pattern of the van der Waals 2D magnet CrCl3 deposited on Au(111). Surprizingly, these higher order dislocations arise from ordinary simple edge dislocations in the atomic lattice of CrCl3. We provide a theoretical framework explaining the higher order dislocations as vortex with a winding Chern number of 2. We expect that these original defects could stabilize some anyons either in a 2D quantum magnet or within a 2D superconductor coupled to it.

cond-mat.mes-hall↗

arXiv2022

Prediction and experimental evidence of the optimisation of the angular branching process in the thallus growth of Podospora anserina

Based upon apical growth and hyphal branching, the two main processes that drive the growth pattern of a fungal network, we propose here a two-dimensions simulation based on a binary-tree modelling allowing us to extract the main characteristics of a generic thallus growth. In particular, we showed that, in a homogeneous environment, the fungal growth can be optimized for exploration and exploitation of its surroundings with a specific angular distribution of apical branching. Two complementary methods of extracting angle values have been used to confront the result of the simulation with experimental data obtained from the thallus growth of the saprophytic filamentous fungus Podospora anserina. Finally, we propose here a validated model that, while being computationally low-cost, is powerful enough to test quickly multiple conditions and constraints. It will allow in future works to deepen the characterization of the growth dynamic of fungal network, in addition to laboratory experiments, that could be sometimes expensive, tedious or of limited scope.

q-bio.QM↗

arXiv2020

Misfit layer compounds: a platform for heavily-doped two-dimensional transition metal dichalcogenides

Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric double-layer field-effect transistors (FET). However, for the case of single layer NbSe$_2$, FET doping is limited to $\approx 1\times 10^{14}$ cm$^{-2}$, while a somewhat larger charge injection can be obtained via deposition of K atoms. Here, by performing ARPES, STM, quasiparticle interference measurements, and first principles calculations we show that a misfit compound formed by sandwiching NbSe$_2$ and LaSe layers behaves as a NbSe$_2$ single layer with a rigid doping of $0.55-0.6$ electrons per Nb atom or $\approx 6\times 10^{14}$ cm$^{-2}$. Due to this huge doping, the $3\times3$ charge density wave is replaced by a $2\times2$ order with very short coherence length. As a tremendous number of different misfit compounds can be obtained by sandwiching TMDs layers with rock salt or other layers, our work paves the way to the exploration of heavily doped 2D TMDs over an unprecedented wide range of doping.

cond-mat.mtrl-sci↗