arXiv subjects

Pascal Ruffieux

Publications and source records attributed to Pascal Ruffieux.

At least 37 records · Page 2Linked to original sources

arXiv2023

On-surface synthesis and characterization of Teranthene and Hexanthene: Ultrashort graphene nanoribbons with mixed armchair and zigzag edges

Graphene nanoribbons (GNRs) exhibit a broad range of physicochemical properties that critically depend on their width and edge topology. While the chemically stable GNRs with armchair edges (AGNRs) are semiconductors with width-tunable band gap, GNRs with zigzag edges (ZGNRs) host spin-polarized edge states, which renders them interesting for applications in spintronic and quantum technologies. However, these states significantly increase their reactivity. For GNRs fabricated via on-surface synthesis under ultrahigh vacuum conditions on metal substrates, the expected reactivity of zigzag edges is a serious concern in view of substrate transfer and device integration under ambient conditions, but corresponding investigations are scarce. Using 10-bromo-9,9':10',9''-teranthracene as a precursor, we have thus synthesized hexanthene (HA) and teranthene (TA) as model compounds for ultrashort GNRs with mixed armchair and zigzag edges, characterized their chemical and electronic structure by means of scanning probe methods, and studied their chemical reactivity upon air exposure by Raman spectroscopy. We present a detailed identification of molecular orbitals and vibrational modes, assign their origin to armchair or zigzag edges, and discuss the chemical reactivity of these edges based on characteristic Raman spectral features.

cond-mat.mtrl-sci↗

arXiv2023

Quantifying Alignment and Quality of Graphene Nanoribbons: A Polarized Raman Spectroscopy Approach

Graphene nanoribbons (GNRs) are atomically precise stripes of graphene with tunable electronic properties, making them promising for room-temperature switching applications like field-effect transistors (FETs). However, challenges persist in GNR processing and characterization, particularly regarding GNR alignment during device integration. In this study, we quantitatively assess the alignment and quality of 9-atom-wide armchair graphene nanoribbons (9-AGNRs) on different substrates using polarized Raman spectroscopy. Our approach incorporates an extended model that describes GNR alignment through a Gaussian distribution of angles. We not only extract the angular distribution of GNRs but also analyze polarization-independent intensity contributions to the Raman signal, providing insights into surface disorder on the growth substrate and after substrate transfer. Our findings reveal that low-coverage samples grown on Au(788) exhibit superior uniaxial alignment compared to high-coverage samples, attributed to preferential growth along step edges, as confirmed by scanning tunneling microscopy (STM). Upon substrate transfer, the alignment of low-coverage samples deteriorates, accompanied by increased surface disorder. On the other hand, high-coverage samples maintain alignment and exhibit reduced disorder on the target substrate. Our extended model enables a quantitative description of GNR alignment and quality, facilitating the development of GNR-based nanoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2023

MoRe Electrodes with 10-nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons

Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nano-scale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we make electrical contact with 9-atom-wide armchair GNRs using superconducting alloy MoRe as well as Pd (as a reference), which are two of the metals providing low-resistance contacts to carbon nanotubes. We take a step towards contacting a single GNR by fabrication of electrodes with a needle-like geometry, with about 20 nm tip diameter and 10 nm separation. To preserve the nano-scale geometry of the contacts, we develop a PMMA-assisted technique to transfer the GNRs onto the pre-patterned electrodes. Our device characterizations as a function of bias-voltage and temperature, show a thermally-activated gate-tunable conductance in the GNR-MoRe-based transistors.

cond-mat.mes-hall↗

arXiv2023

Twisted bilayer zigzag-graphene nanoribbon junctions with tunable edge states

Stacking two-dimensional layered materials such as graphene and transitional metal dichalcogenides with nonzero interlayer twist angles has recently become attractive because of the emergence of novel physical properties. Stacking of one-dimensional nanomaterials offers the lateral stacking offset as an additional parameter for modulating the resulting material properties. Here, we report that the edge states of twisted bilayer zigzag graphene nanoribbons (TBZGNRs) can be tuned with both the twist angle and the stacking offset. Strong edge state variations in the stacking region are first revealed by density functional theory (DFT) calculations. We construct and characterize twisted bilayer zigzag graphene nanoribbon (TBZGNR) systems on a Au(111) surface using scanning tunneling microscopy. A detailed analysis of three prototypical orthogonal TBZGNR junctions exhibiting different stacking offsets by means of scanning tunneling spectroscopy reveals emergent near-zero-energy states. From a comparison with DFT calculations, we conclude that the emergent edge states originate from the formation of flat bands whose energy and spin degeneracy are highly tunable with the stacking offset. Our work highlights fundamental differences between 2D and 1D twistronics and spurs further investigation of twisted one-dimensional systems.

cond-mat.mes-hall↗

arXiv2023

Platinum contacts for 9-atom-wide armchair graphene nanoribbons

Creating a good contact between electrodes and graphene nanoribbons (GNRs) has been a longstanding challenge in searching for the next GNR-based nanoelectronics. This quest requires the controlled fabrication of sub-20 nm metallic gaps, a clean GNR transfer minimizing damage and organic contamination during the device fabrication, as well as work function matching to minimize the contact resistance. Here, we transfer 9-atom-wide armchair-edged GNRs (9-AGNRs) grown on Au(111)/mica substrates to pre-patterned platinum electrodes, yielding polymer-free 9-AGNR field-effect transistor devices. Our devices have a resistance in the range of $10^6$ to $10^8$ $Ω$ in the low-bias regime, which is 2 to 4 orders of magnitude lower than previous reports. Density functional theory (DFT) calculations combined with the non-equilibrium Green's function method (NEGF) explain the observed p-type electrical characteristics and further demonstrate that platinum gives strong coupling and higher transmission in comparison to other materials such as graphene.

cond-mat.mes-hall↗

arXiv2022

Direct observation of the magnetic ground state of the two smallest triangular nanographenes

Fusion of three benzene rings in a triangular fashion gives rise to the smallest open-shell graphene fragment, the phenalenyl radical, whose $π$-extension leads to an entire family of non-Kekulé triangular nanographenes with high-spin ground states. Here, we report the first synthesis of unsubstituted phenalenyl on a Au(111) surface, which is achieved by combining in-solution synthesis of the hydro-precursor and on-surface activation by atomic manipulation, using the tip of a scanning tunneling microscope (STM). Single-molecule structural and electronic characterization confirm its open-shell S = 1/2 ground state that gives rise to Kondo screening on the Au(111) surface. In addition, we compare the phenalenyl's electronic properties with those of triangulene, the second homolog in the series, whose S = 1 ground state induces an underscreened Kondo effect. Our results set a new lower size-limit in the on-surface synthesis of magnetic nanographenes that can serve as building blocks for the realization of new exotic quantum phases of matter.

cond-mat.mes-hall↗

arXiv2022

Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture

Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-gate FET geometry, consisting of an ultra-narrow finger gate and two side gates. We use high-resolution electron-beam lithography (EBL) for defining finger gates as narrow as 12 nm and combine them with graphene electrodes for contacting the GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond patterns, suggesting that the GNRs form QDs that are connected both in series and in parallel. Moreover, we show that the additional gates enable differential tuning of the QDs in the nanojunction, providing the first step towards multi-gate control of GNR-based multi-dot systems.

cond-mat.mes-hall↗

arXiv2022

Ultimately-scaled electrodes for contacting individual atomically-precise graphene nanoribbons

Bottom-up synthesized graphene nanoribbons (GNRs) are quantum materials that can be structured with atomic precision, providing unprecedented control over their physical properties. Accessing the intrinsic functionality of GNRs for quantum technology applications requires the manipulation of single charges, spins, or photons at the level of an individual GNR. However, experimentally, contacting individual GNRs remains challenging due to their nanometer-sized width and length as well as their high density on the metallic growth substrate. Here, we demonstrate the contacting and electrical characterization of individual GNRs in a multi-gate device architecture using single-walled carbon nanotubes (SWNTs) as ultimately-scaled electrodes. The GNR-SWNT devices exhibit well-defined quantum transport phenomena, including Coulomb blockade, excited states, and Franck-Condon blockade, all characteristics pointing towards the contacting of an individual GNR. Combined with the multi-gate architecture, this contacting method opens a road for the integration of GNRs in quantum devices to exploit their topologically trivial and non-trivial nature.

cond-mat.mes-hall↗

arXiv2022

Length-independent quantum transport through topological band states of graphene nanoribbons

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on the electronic transport characterization of an edge-modified GNR suspended between the tip of a scanning tunneling microscope (STM) and a Au(111) substrate. Differential conductance measurements on this metal-GNR-metal junction reveal loss-less transport properties (inverse decay length $β< 0.001 /\overset{\circ}{\mathrm{A}}$) with high conductance ($\sim 0.1$ G$_0$) at low voltages (50 meV) over long distances ($z > 10$ nm). The transport behavior is sensitive to the coupling between ribbon and electrodes, an effect that is rationalized using tight-binding and density functional theory simulations. From extensive modelling we infer that the length-independent transport is a manifestation of band transport through topological valence states, which originate from the zigzag segments on the GNR edges.

cond-mat.mes-hall↗

arXiv2022

Growth optimization and device integration of narrow-bandgap graphene nanoribbons

The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

cond-mat.mtrl-sci↗

arXiv2022

Scaling and Statistics of Bottom-Up Synthesized Armchair Graphene Nanoribbon Transistors

Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy to connect the nanomaterial morphologies and the device performance through a Monte Carlo device model and apply it to understand the scaling trends of bottom-up synthesized armchair graphene nanoribbon (GNR) transistors. A new nanofabrication process is developed for GNR transistors with channel length down to 7 nm. The impacts of the GNR spatial distributions and the device geometries on the device performance are investigated systematically through comparison of experimental data with the model. Through this study, challenges and opportunities of transistor technologies based on bottom-up synthesized GNRs are pinpointed, paving the way to the further improvement of the GNR device performance for future transistor technology nodes.

cond-mat.mes-hall↗

arXiv2021

Edge Disorder in Bottom-Up Zigzag Graphene Nanoribbons: Implications for Magnetism and Quantum Electronic Transport

We unveil the nature of the structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on the magnetism and electronic transport on the basis of scanning probe microscopies and first-principles calculations. We find that edge-missing m-xylene units emerging during the cyclodehydrogenation step of the on-surface synthesis are the most common point defects. These "bite'' defects act as spin-1 paramagnetic centers, severely disrupt the conductance spectrum around the band extrema, and give rise to spin-polarized charge transport. We further show that the electronic conductance across graphene nanoribbons is more sensitive to "bite" defects forming at the zigzag edges than at the armchair ones. Our work establishes a comprehensive understanding of the low-energy electronic properties of disordered bottom-up graphene nanoribbons.

cond-mat.mtrl-sci↗

arXiv2021

Synthesis and characterization of super-nonazethrene

Beginning with the early work of Clar et al. in 1955, zethrenes and their laterally-extended homologues, super-zethrenes, have been intensively studied in the solution phase, and are widely investigated as optical and charge transport materials. Super-zethrenes are also considered to exhibit an open-shell ground state. Zethrenes may thus serve as model compounds to investigate nanoscale pi-magnetism. However, their synthesis is extremely challenging due to their high reactivity. We report here a combined in-solution and on-surface synthesis of the hitherto largest zethrene homologue - super-nonazethrene - on Au(111). Using single-molecule scanning tunneling microscopy and spectroscopy, we show that super-nonazethrene exhibits an open-shell singlet ground state featuring a large spin polarization-driven electronic gap of 1 eV. We obtain real-space maps of the frontier molecular orbitals, and find that they correspond to singly occupied molecular orbitals. In consistence with the emergence of an open-shell ground state, high-resolution tunneling spectroscopy reveals inelastic singlet-triplet spin excitations in super-nonazethrene, characterized by a strong intramolecular magnetic exchange coupling of 51 meV. Further insights are gained by mean-field and many-body perturbation theory calculations. Given the paucity of zethrene chemistry on surfaces, our results therefore provide unprecedented access to large open-shell zethrene compounds amenable to scanning probe measurements, with potential application in molecular spintronics.

cond-mat.mes-hall↗

arXiv2021

Observation of fractional edge excitations in nanographene spin chains

Fractionalization is a phenomenon in which strong interactions in a quantum system drive the emergence of excitations with quantum numbers that are absent in the building blocks. Outstanding examples are excitations with charge e/3 in the fractional quantum Hall effect, solitons in one-dimensional conducting polymers and Majorana states in topological superconductors. Fractionalization is also predicted to manifest itself in low-dimensional quantum magnets, such as one-dimensional antiferromagnetic S = 1 chains. The fundamental features of this system are gapped excitations in the bulk and, remarkably, S = 1/2 edge states at the chain termini, leading to a four-fold degenerate ground state that reflects the underlying symmetry-protected topological order. Here, we use on-surface synthesis to fabricate one-dimensional spin chains that contain the S = 1 polycyclic aromatic hydrocarbon triangulene as the building block. Using scanning tunneling microscopy and spectroscopy at 4.5 K, we probe length-dependent magnetic excitations at the atomic scale in both open-ended and cyclic spin chains, and directly observe gapped spin excitations and fractional edge states therein. Exact diagonalization calculations provide conclusive evidence that the spin chains are described by the S = 1 bilinear-biquadratic Hamiltonian in the Haldane symmetry-protected topological phase. Our results open a bottom-up approach to study strongly correlated quantum spin liquid phases in purely organic materials, with the potential for the realization of measurement-based quantum computation.

cond-mat.mes-hall↗

arXiv2021

Optimized Graphene Electrodes for contacting Graphene Nanoribbons

Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.

cond-mat.mes-hall↗

arXiv2020

Coupled spin states in armchair graphene nanoribbons with asymmetric zigzag edge extensions

Carbon-based magnetic structures promise significantly longer coherence times than traditional magnetic materials, which is of fundamental importance for spintronic applications. An elegant way of achieving carbon-based magnetic moments is the design of graphene nanostructures with an imbalanced occupation of the two sublattices forming the carbon honeycomb lattice. According to Lieb's theorem, this induces local magnetic moments that are proportional to the sublattice imbalance. Exact positioning of sublattice imbalanced nanostructures in graphene nanomaterials hence offers a route to control interactions between induced local magnetic moments and to obtain graphene nanomaterials with magnetically non-trivial ground states. Here, we show that such sublattice imbalanced nanostructures can be incorporated along a large band gap armchair graphene nanoribbon on the basis of asymmetric zigzag edge extensions, which is achieved by incorporating specifically designed precursor monomers during the bottom-up fabrication of the graphene nanoribbons. Scanning tunneling spectroscopy of an isolated and electronically decoupled zigzag edge extension reveals Hubbard-split states in accordance with theoretical predictions. Investigation of pairs of such zigzag edge extensions reveals ferromagnetic, antiferromagnetic or quenching of the magnetic interactions depending on the relative alignment of the asymmetric edge extensions. Moreover, a ferromagnetic spin chain is demonstrated for a periodic pattern of zigzag edge extensions along the nanoribbon axis. This work opens a route towards the design and fabrication of graphene nanoribbon-based spin chains with complex magnetic ground states.

cond-mat.mes-hall↗

arXiv2020

Quantum Electronic Transport Across "Bite" Defects in Graphene Nanoribbons

On-surface synthesis has recently emerged as an effective route towards the atomically precise fabrication of graphene nanoribbons of controlled topologies and widths. However, whether and to which degree structural disorder occurs in the resulting samples is a crucial issue for prospective applications that remains to be explored. Here, we experimentally identify missing benzene rings at the edges, which we name "bite" defects, as the most abundant type of disorder in armchair nanoribbons synthesized by the bottom-up approach. First, we address their density and spatial distribution on the basis of scanning tunnelling microscopy and find that they exhibit a strong tendency to aggregate. Next, we explore their effect on the quantum charge transport from first-principles calculations, revealing that such imperfections substantially disrupt the conduction properties at the band edges. Finally, we generalize our theoretical findings to wider nanoribbons in a systematic manner, hence establishing practical guidelines to minimize the detrimental role of such defects on the charge transport. Overall, our work portrays a detailed picture of "bite" defects in bottom-up armchair graphene nanoribbons and assesses their effect on the performance of carbon-based nanoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2020

Giant magnetic exchange coupling in rhombus-shaped nanographenes with zigzag periphery

Nanographenes with zigzag edges are predicted to manifest non-trivial pi-magnetism resulting from the interplay of hybridization of localized frontier states and Coulomb repulsion between valence electrons. This provides a chemically tunable platform to explore quantum magnetism at the nanoscale and opens avenues toward organic spintronics. The magnetic stability in nanographenes is thus far limited by the weak magnetic exchange coupling which remains below the room temperature thermal energy. Here, we report the synthesis of large rhombus-shaped nanographenes with zigzag periphery on gold and copper surfaces. Single-molecule scanning probe measurements unveil an emergent magnetic spin-singlet ground state with increasing nanographene size. The magnetic exchange coupling in the largest nanographene, determined by inelastic electron tunneling spectroscopy, exceeds 100 meV or 1160 K, which outclasses most inorganic nanomaterials and remarkably survives on a metal electrode.

cond-mat.mes-hall↗