arXiv subjects

Patrick Daoust

Publications and source records attributed to Patrick Daoust.

5 recordsLinked to original sources

arXiv2026

Magneto-optical characterization of GeSn and GeSn/SiGeSn heterostructures

Hole spin qubits in germanium (Ge)-based heterostructures have demonstrated their potential for scalable quantum information processing using all-electrical gate operations. Furthermore, the emerging material platform of germanium-tin (GeSn) can feature a direct bandgap, which makes it promising for establishing spin-photon interfaces for quantum networking. Here, we perform magneto-photoluminescence measurements of a Ge0.88Sn0.12/Si0.02Ge0.89Sn0.09 double quantum well using the double modulation Fourier transform infrared-based photoluminescence spectroscopy. Our measurements reveal theoretically expected diamagnetic shift at low magnetic fields as well as the linear trend of zeroth-level Landau quantization at higher fields and Zeeman-induced polarization-dependent energy shifts at +/- 12 T. We extract an effective g-factor of ~ 2 and an excitonic reduced mass of ~ 0.04 me consistent with previous estimations for heavy-hole {\Gamma}-valley excitons. The observation of sizable Zeeman splitting is consistent with strong spin-orbit interaction in Ge-based hole systems, which can enable electrically driven spin control. Our analysis can be adopted for studying and evaluating group-IV semiconductor heterostructures as hosts for hole spin qubits toward scalable quantum information processing.

quant-ph↗

arXiv2025

Formation of C-centers in Si-based systems by light ion irradiation

Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and information still remains a challenge. In this work, we utilize light ions, such as H+ and He+, to gently generate quantum emitters in a crystalline Si matrix. Temperature-dependent photoluminescence measurements demonstrate the presence of optically-active defects, whose fluorescence matches the primary telecom window around 1550 nm. In addition, time-resolved investigations unveil long-lived excitonic states in the {\mu}s regime, thus confirming the formation of interstitial oxygen-carbon complexes, termed C-centers. Finally, we explored controlled ion irradiation strategies to seamlessly generate C-centers also in Ge-on-Si heterostructures, which offer an advanced technological platform for the future realization of integrated quantum photonics. This analysis, informed by practical color center synthesis and proof-of-principle experiments in epitaxial architectures, indicates intriguing prospects and profitable strategies to advance the burgeoning field of light-based quantum technologies.

cond-mat.mtrl-sci↗

arXiv2024

Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ membrane mid-infrared photodetectors

Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layers. This compressive strain limits the material quality and its thermal stability besides expanding the band gap, thereby increasing the Sn content needed to cover a broader range in the mid-infrared. Released Ge$_{1-x}$Sn$_x$ membranes provide an effective way to mitigate these harmful effects of the epitaxial strain and control the band gap energy while enabling the hybrid integration onto different substrates. With this perspective, herein strain-relaxed Ge$_{0.89}$Sn$_{0.11}$ membranes are fabricated and subsequently transfer-printed with metal contacts to create multiple photodetectors in a single transfer step. The resulting photodetectors exhibit an extended photodetection cutoff reaching a wavelength of $3.1 \,\mu$m, coupled with a significant reduction in the dark current of two orders of magnitude as compared to as-grown photoconductive devices. The latter yields a reduced cutoff of $2.8 \,\mu$m due to the inherent compressive strain. Furthermore, the impact of chemical treatment and annealing on the device performance was also investigated showing a further reduction in the dark current. The demonstrated transfer printing, along with the use of an adhesive layer, would allow the transfer of multiple GeSn membranes onto virtually any substrate. This approach paves the way for scalable fabrication of hybrid optoelectronic devices leveraging the tunable band gap of Ge$_{1-x}$Sn$_x$ in the mid-wave infrared range.

physics.app-ph↗

arXiv2024

Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon

There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic devices. These systems are quintessential to address several technological bottlenecks in detection and ranging, surveillance, ultrafast spectroscopy, and imaging. In fact, current e-SWIR high bandwidth PDs are predominantly made of III-V compound semiconductors and thus are costly and suffer a limited integration on silicon besides a low responsivity at wavelengths exceeding $2.3 \,\mu$m. To circumvent these challenges, Ge$_{1-x}$Sn$_{x}$ semiconductors have been proposed as building blocks for silicon-integrated high-speed e-SWIR devices. Herein, this study demonstrates a vertical all-GeSn PIN PDs consisting of p-Ge$_{0.92}$Sn$_{0.08}$/i-Ge$_{0.91}$Sn$_{0.09}$/n-Ge$_{0.89}$Sn$_{0.11}$ and p-Ge$_{0.91}$Sn$_{0.09}$/i-Ge$_{0.88}$Sn$_{0.12}$/n-Ge$_{0.87}$Sn$_{0.13}$ heterostructures grown on silicon following a step-graded temperature-controlled epitaxy protocol. The performance of these PDs was investigated as a function of the device diameter in the $10-30 \,\mu$m range. The developed PD devices yield a high bandwidth of 12.4 GHz at a bias of 5V for a device diameter of $10 \,\mu$m. Moreover, these devices show a high responsivity of 0.24 A/W, a low noise, and a $2.8 \,\mu$m cutoff wavelength thus covering the whole e-SWIR range.

physics.app-ph↗

arXiv2023

Continuous-wave GeSn light emitting diodes on silicon with $2.5 \, \mu$m room-temperature emission

Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this longstanding challenge, GeSn semiconductors have been proposed as versatile building blocks for silicon-integrated optoelectronic devices. In this regard, this work demonstrates light-emitting diodes (LEDs) consisting of a vertical PIN double heterostructure p-Ge$_{0.94}$Sn$_{0.06}$/i-Ge$_{0.91}$Sn$_{0.09}$/n-Ge$_{0.95}$Sn$_{0.05}$ grown epitaxially on a silicon wafer using germanium interlayer and multiple GeSn buffer layers. The emission from these GeSn LEDs at variable diameters in the 40-120 $\mu$m range is investigated under both DC and AC operation modes. The fabricated LEDs exhibit a room temperature emission in the extended short-wave range centered around 2.5 $\mu$m under an injected current density as low as 45 A/cm$^2$. By comparing the photoluminescence and electroluminescence signals, it is demonstrated that the LED emission wavelength is not affected by the device fabrication process or heating during the LED operation. Moreover, the measured optical power was found to increase monotonically as the duty cycle increases indicating that the DC operation yields the highest achievable optical power. The LED emission profile and bandwidth are also presented and discussed.

physics.optics↗