arXiv subjects

Patrick E. Hopkins

Publications and source records attributed to Patrick E. Hopkins.

42 records · Page 3Linked to original sources

arXiv2017

Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport

We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous experimental data, suggest that the TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the "vibrational mismatch" concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as $490\lbrack +150, -110\rbrack$ MW m$^{-2}$ K$^{-1}$. The disagreement among the DMM and AGF and the experimental data these elevated temperatures suggests a non-negligible contribution from additional modes contributing to TBC that not accounted for in the fundamental assumptions of these harmonic formalisms, such as inelastic scattering. Given the high quality of these ZnO/GaN interface, these results provide an invaluable critical and quantitive assessment of the accuracy of assumptions in the current state of the art of computational approaches for predicting the phonon TBC across interfaces.

cond-mat.mtrl-sci↗

arXiv2017

Small-mass atomic defects enhance vibrational thermal transport at disordered interfaces with ultrahigh thermal boundary conductance

The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational works have suggested that interfacial defects can enhance this thermal boundary conductance through emergence of unique vibrations that are intrinsic to the material interface and defect atoms,$^{2-6}$ a finding that contradicts traditional theory and conventional understanding. By manipulating the local heat flux of atomic vibrations that comprise these interfacial modes, in principle, the TBC can be increased. In this work, we provide evidence that interfacial defects can enhance the TBC across interfaces through the emergence of unique high frequency vibrational modes that arise from atomic mass defects at the interface with relatively small masses. We demonstrate ultrahigh TBC at amorphous SiOC:H/SiC:H interfaces, approaching 1 GW m$^{-2}$ K$^{-1}$, that is further increased through the introduction of nitrogen defects. The fact that disordered interfaces can exhibit such high conductances, which can be further increased with additional defects offers a unique direction in controlling interfacial thermal transport that becomes important in manipulating heat transfer across materials with high densities of interfaces.

cond-mat.mtrl-sci↗

arXiv2017

Ballistic transport of long wavelength phonons and thermal conductivity accumulation in nanograined silicon-germanium alloys

Computationally efficient modeling of the thermal conductivity of materials is crucial to thorough experimental planning and theoretical understanding of thermal properties. We present a modeling approach in this work that utilizes frequency-dependent effective medium to calculate lattice thermal conductivity of nanostructured solids. The method accurately predicts a significant reduction in the thermal conductivity of nanostructured Si80Ge20 systems, along with previous reported thermal conductivities in nanowires and nanoparticles-in-matrix materials. We use our model to gain insight into the role of long wavelength phonons on the thermal conductivity of nanograined silicon-germanium alloys. Through thermal conductivity accumulation calculations with our modified effective medium model, we show that phonons with wavelengths much greater than the average grain size will not be impacted by grain boundary scattering, counter to the traditionally assumed notion that grain boundaries in solids will act as diffusive interfaces that will limit long wavelength phonon transport. This is further supported through a modulation frequency dependent thermal conductivity as measured with time-domain thermoreflectance.

cond-mat.mes-hall↗

arXiv2015

Steady-State Thermal Analysis of an Integrated 160 GHz Balanced Quadrupler Based on Quasi-Vertical Schottky Diodes

This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D finite element method. Time-Domain Thermoreflectance (TDTR) was used to measure the thermal conductivity of the different materials used in the model. A maximum anode temperature of 64.9 C was found from the simulation. The addition of an extra beam lead connected to the block, for heat sinking, was found to reduce this maximum temperature to 41.0 C.

cond-mat.mtrl-sci↗

arXiv2015

Role of crystal structure and junction morphology on interface thermal conductance

We argue that the relative thermal conductance between interfaces with different morphologies is controlled by crystal structure through $M_{min}/M_c > 1$, the ratio between the {\it minimum mode} count on either side $M_{min}$, and the {\it conserving modes} $M_c$ that preserve phonon momentum transverse to the interface. Junctions with an added homogenous layer, "uniform", and "abrupt" junctions are limited to $M_c$ while junctions with interfacial disorder, "mixed", exploit the expansion of mode spectrum to $M_{min}$. In our studies with cubic crystals, the largest enhancement of conductance from "abrupt" to "mixed" interfaces seems to be correlated with the emergence of voids in the conserving modes, where $M_c = 0$. Such voids typically arise when the interlayer coupling is weakly dispersive, making the bands shift rigidly with momentum. Interfacial mixing also increases alloy scattering, which reduces conductance in opposition with the mode spectrum expansion. Thus the conductance across a "mixed' junction does not always increase relative to that at a "uniform" interface.

cond-mat.mes-hall↗

arXiv2015

Impedance Matching of Atomic Thermal Interfaces Using Primitive Block Decomposition

We explore the physics of thermal impedance matching at the interface between two dissimilar materials by controlling the properties of a single atomic mass or bond. The maximum thermal current is transmitted between the materials when we are able to decompose the entire heterostructure solely in terms of primitive building blocks of the individual materials. Using this approach, we show that the minimum interfacial thermal resistance arises when the interfacial atomic mass is the arithmetic mean, while the interfacial spring constant is the harmonic mean of its neighbors. The contact induced broadening matrix for the local vibronic spectrum, obtained from the self-energy matrices, generalizes the concept of acoustic impedance to the nonlinear phonon dispersion or the short-wavelength (atomic) limit.

cond-mat.mes-hall↗