arXiv subjects

Patrick Hopkins

Publications and source records attributed to Patrick Hopkins.

5 recordsLinked to original sources

arXiv2024

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered interface with a high thermal boundary resistance (TBR) of 20.6 m^2-K/GW. We employed sputtered carbide interlayers (e.g., $B_4C$, $SiC$, $B_4C/SiC$) to reduce thermal boundary resistance in diamond/AlGaN interfaces. The carbide interlayers resulted in record-low thermal boundary resistance values of 3.4 and 3.7 m^2-K/GW for Al$_{0.65}$Ga$_{0.35}$N samples with $B_4C$ and $SiC$ interlayers, respectively. STEM imaging of the interface reveals interlayer thicknesses between 1.7-2.5 nm, with an amorphous structure. Additionally, Fast-Fourier Transform (FFT) characterization of sections of the STEM images displayed sharp crystalline fringes in the AlGaN layer, confirming it was properly protected from damage from hydrogen plasma during the diamond growth. In order to accurately measure the thermal boundary resistance we develop a hybrid technique, combining time-domain thermoreflectance and steady-state thermoreflectance fitting, offering superior sensitivity to buried thermal resistances. Our findings underscore the efficacy of interlayer engineering in enhancing thermal transport and demonstrate the importance of innovative measurement techniques in accurately characterizing complex thermal interfaces. This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies.

cond-mat.mtrl-sci↗

arXiv2022

Ablation threshold and temperature dependent thermal conductivity of high entropy carbide thin films

High entropy carbides (HECs) are a promising new class of ultra-high temperature ceramics that could provide novel material solutions for leading edges of hypersonic vehicles, which can reach temperatures above 3500C and experience extreme thermal gradients. Although the mechanical and thermal properties of HECs have been studied extensively at room temperature, few works have examined HEC properties at high temperatures or considered these materials' responses to thermal shock. In this work, we measure the thermal conductivity of a five-cation HEC up to 1200C. We find that thermal conductivity increases with temperature, consistent with trends demonstrated in single-metal carbides. We also measure thermal conductivity of an HEC deposited with varying CH4 flow rate, and find that although thermal conductivity is reduced when carbon content surpasses stoichiometric concentrations, the films all exhibited the same temperature dependent trends regardless of carbon content. To compare the thermal shock resistance of HECs with a refractory carbide, we conduct pulsed laser ablation measurements to determine the fluence threshold the HECs can withstand before damaging. We find that this metric for the average bond strength trends with the theoretical hardness of the HECs as expected.

physics.app-ph↗

arXiv2020

The physical and mechanical properties of hafnium orthosilicate: experiments and first-principles calculations

Hafnium orthosilicate (HfSiO4: hafnon) has been proposed as an environmental barrier coating (EBC) material to protect silicon coated, silicon-based ceramic materials at high temperatures and as a candidate dielectric material in microelectronic devices. It can naturally form at the interface between silicon dioxide (SiO2) and hafnia (HfO2). When used in these applications, its coefficient of thermal expansion (CTE) should match that of silicon and SiC composites to reduce the stored elastic strain energy, and thus risk of failure of these systems. The physical, mechanical, thermodynamic and thermal transport properties of hafnon have been investigated using a combination of both density functional theory (DFT) calculations and experimental assessments. The average linear coefficient of thermal expansion (CTE) calculated using the quasi-harmonic approximation increase from 3.06 10-6 K-1 to 6.36 10-6 K-1, as the temperature increases from 300 to 1500 K, in agreement with both X-ray diffraction lattice parameter and dilatometry measurements. The predicted thermal conductivity from Boltzmann transport theory was approximately 18 W/m.K at 300K. Both hot disk and laser flash measurements gave a thermal conductivity of 13.3 W/m.K. This slightly lower value is indicative of residual disorder in the experimental samples that was absent in the theoretical analysis. First-principles calculations and nanoindentation techniques were used to assess the ambient temperature elastic constants and bulk modulus respectively. The elastic properties obtained by both approaches agreed to within 5% validating the computational approach and its future use for study of the thermomechanical properties of other oxides or silicates.

cond-mat.mtrl-sci↗

arXiv2019

Enhanced Figure of Merit in Bismuth-Antimony Fine-Grained Alloys at Cryogenic Temperatures

Thermoelectric (TE) materials research plays a vital role in heat-to-electrical energy conversion and refrigeration applications. Bismuth-antimony (Bi-Sb) alloy is a promising material for thermoelectric cooling. Herein, a high figure of merit, ZT, near 0.6 at cryogenic temperatures (100-150K) has been achieved in melt-spun n-type Bi85Sb15 bulk samples consisting of micron-size grains. The achieved ZT is nearly 50 percents higher than polycrystalline averaged single crystal ZT of ~0.4, and it is also significantly higher than ZT of less than ~0.3 measured below 150K in Bi-Te alloys commonly used for cryogenic cooling applications. The improved thermoelectric properties can be attributed to the fine-grained microstructure achieved from rapid solidification, which not only significantly reduced the thermal conductivity but also mitigated a segregation effect. A record low thermal conductivity of ~1.5 W m-1 K-1 near 100 K was measured using the hot disk method. The thermoelectric properties for this intriguing semimetal-semiconductor alloy system were analyzed within a two-band effective mass model. The study revealed a gradual narrowing of the band gap at increasing temperature in Bi-Sb alloy for the first time. Magneto-thermoelectric effects of this Bi-Sb alloy further improved the TE properties, leading to ZT of about 0.7. The magneto-TE effect was further demonstrated in a combined NdFeB/BiSb/NdFeB system. The compactness of the BiSb-magnet system with high ZT enables the utilization of magneto-TE effect in thermoelectric cooling applications.

cond-mat.mtrl-sci↗

arXiv2019

A High-Entropy Silicide: (Mo0.2Nb0.2Ta0.2Ti0.2W0.2)Si2

A high-entropy metal disilicide, (Mo0.2Nb0.2Ta0.2Ti0.2W0.2)Si2, has been successfully synthesized. X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), and electron backscatter diffraction (EBSD) collectively show the formation of a single high-entropy silicide phase. This high-entropy (Mo0.2Nb0.2Ta0.2Ti0.2W0.2)Si2 possesses a hexagonal C40 crystal structure with ABC stacking sequence and a point group of P6222. This discovery expands the known families of high-entropy materials from metals, oxides, borides, carbides, and nitrides to a silicide, for the first time to our knowledge, as well as demonstrating that a new, non-cubic, crystal structure (with lower symmetry) can be made into high-entropy. This (Mo0.2Nb0.2Ta0.2Ti0.2W0.2)Si2 exhibits high nanohardness of 16.7 +- 1.9 GPa and Vickers hardness of 11.6 +- 0.5 GPa. Moreover, it has a low thermal conductivity of 6.9 +- 1.1 W m-1 K-1, which is approximately one order of magnitude lower than that of the widely-used tetragonal MoSi2 and ~1/3 of those reported values for the hexagonal NbSi2 and TaSi2 with the same crystal structure.

cond-mat.mtrl-sci↗