arXiv subjects

Patrycja Paruch

Publications and source records attributed to Patrycja Paruch.

17 recordsLinked to original sources

arXiv2026

Super-resolution Control of Two-dimensional Quantum Emitters

Localized interlayer excitons in semiconducting transition-metal dichalcogenide heterobilayers are quantum emitters with a static electric dipole moment, making them excellent nanoscale charge sensors to probe correlated quantum phases in a proximal layer. These emitters are electrically tunable and inherit spin-valley selection rules, yet their deterministic spatial control remains challenging due to subwavelength confinement. Here, we present a platform that combines cryogenic optical spectroscopy with scanning probe microscopy to investigate trapped interlayer excitons in WSe$_2$/MoSe$_2$ bilayers. By exploiting AFM-based local Stark shift, we achieve super-resolution localization of emitters separated by only a few tens of nanometers and demonstrate deterministic control of individual charge states, including trion formation, opening a path towards coherent inter-dot coupling. Time-resolved measurements reveal tip-induced modification of the electromagnetic vacuum around individual emitters, thus controlling their radiative emission. Our multi-point charge sensing platform with optical readout is particularly well-suited to study fractionalization and anyon dynamics in semiconducting FCIs.

cond-mat.mes-hall↗

arXiv2025

Nanoscale electrostatic control in ferroelectric thin films through lattice chemistry

Nanoscale electrostatic control of oxide interfaces enables physical phenomena and exotic functionalities beyond the realm of the bulk material. In technologically-relevant ferroelectric thin films, the interface-mediated polarization control is usually exerted by engineering the depolarizing field. Here, in contrast, we introduce polarizing surfaces and lattice chemistry engineering as an alternative strategy. Specifically, we engineer the electric-dipole ordering in ferroelectric oxide heterostructures by exploiting the charged sheets of the layered Aurivillius model system. By tracking in-situ the formation of the Aurivillius charged Bi$_{2}$O$_{2}$ sheets, we reveal their polarizing effect leading to the characteristic Aurivillius out-of-plane antipolar ordering. Next, we use the polarizing Bi$_{2}$O$_{2}$ stacking as a versatile electrostatic environment to create new electric dipole configurations. We insert multiferroic BiFeO$_3$ into the Aurivillius framework to stabilize a ferrielectric-like non-collinear electric-dipole order in the final heterostructure while maintaining the antiferromagnetic order of BiFeO$_3$. We thus demonstrate that engineering the lattice chemistry stabilizes unconventional ferroic orderings at the nanoscale, a strategy that may be expanded beyond the realm of electrically ordered materials.

cond-mat.mtrl-sci↗

arXiv2025

Curvature-Controlled Polarization in Adaptive Ferroelectric Membranes

In this study, we explore the ferroelectric domain structure and mechanical properties of PbTiO$_3$-based membranes, which develops a well-ordered and crystallographic-oriented ripple pattern upon release from their growth substrate. The ferrolectric domain structure of the PbTiO$_3$ layer was examined at various length scales using optical second harmonic generation, piezoresponse force microscopy, and scanning transmission electron microscopy. These methods reveal the presence of purely in-plane domains organized into superdomains at the crest of the ripples, while an in-plane/out-of-plane domain structure was observed in the flat regions separating the ripples, in agreement with phase-field simulations. The mechanical properties of the membrane were assessed using contact resonance force microscopy, which identified distinct mechanical behaviors at the ripples compared to the flat regions. This study shows that the physical properties of the ferroelectric layer in membranes can be locally controlled within an ordered array of ripples, with well-defined geometric characteristics.

cond-mat.mtrl-sci↗

arXiv2023

Nanoscale domain engineering in SrRuO$_3$ thin films

We investigate nanoscale domain engineering via epitaxial coupling in a set of SrRuO$_3$/PbTiO$_3$/SrRuO$_3$ heterostructures epitaxially grown on (110)$_o$-oriented DyScO$_3$ substrates. The SrRuO$_3$ layer thickness is kept at 55 unit cells, whereas the PbTiO$_3$ layer is grown to thicknesses of 23, 45 and 90 unit cells. Through a combination of atomic force microscopy, x-ray diffraction and high resolution scanning transmission electron microscopy studies, we find that above a certain critical thickness of the ferroelectric layer, the large structural distortions associated with the ferroelastic domains propagate through the top SrRuO$_3$ layer, locally modifying the orientation of the orthorhombic SrRuO$_3$ and creating a modulated structure that extends beyond the ferroelectric layer boundaries.

cond-mat.mtrl-sci↗

arXiv2023

Mapping the complex evolution of ferroelastic/ferroelectric domain patterns in epitaxially strained PbTiO3 heterostructures

We study the complex ferroelastic/ferroelectric domain structure in the prototypical ferroelectric PbTiO3 epitaxially strained on (110)o-oriented DyScO3 substrates, using a combination of atomic force microscopy, laboratory and synchrotron x-ray diffraction and high resolution scanning transmission electron microscopy. We observe that the anisotropic strain imposed by the orthorhombic substrate creates a large asymmetry in the domain configuration, with domain walls macroscopically aligned along one of the two in-plane directions. We show that the periodicity as a function of film thickness deviates from the Kittel law. As the ferroelectric film thickness increases, we find that the domain configuration evolves from flux-closure to a/c-phase, with a larger scale arrangement of domains into superdomains.

cond-mat.mtrl-sci↗

arXiv2022

Observation of flat $\Gamma$ moir\'e bands in twisted bilayer WSe$_2$

The recent observation of correlated phases in transition metal dichalcogenide moir\'e systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and momentum-space mapping techniques to study moir\'e superlattice effects in 57.4$^{\circ}$ twisted WSe$_2$ (tWSe$_2$). Our data reveal a split-off flat band that derives from the monolayer $\Gamma$ states. Using advanced data analysis, we directly quantify the moir\'e potential from our data. We further demonstrate that the global valence band maximum in tWSe$_2$ is close in energy to this flat band but derives from the monolayer K-states which show weaker superlattice effects. These results constrain theoretical models and open the perspective that $\Gamma$-valley flat bands might be involved in the correlated physics of twisted WSe$_2$.

cond-mat.str-el↗

arXiv2022

Non-Ising domain walls in c-phase ferroelectric lead titanate thin films

Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence their properties, have brought to the forefront questions about the nature of their domain walls -- long believed to be primarily Ising, with locally null polarisation. Here, combining three complementary techniques -- second harmonic generation microscopy, piezoresponse force microscopy, and transmission electron microscopy - to cover all the relevant lengthscales, we reveal the N\'eel character (non-Ising polarisation oriented perpendicular to the wall) of 180{\deg} domain walls in c-phase tetragonal ferroelectric lead titanate epitaxial thin films, for both artificial and intrinsic domains at room temperature. Furthermore, we show that variations in the domain density -- detected both optically and via local piezoresponse, then quantified by radial autocorrelation analysis -- can give us insight into the underlying defect potential present in these materials.

cond-mat.mtrl-sci↗

arXiv2022

Switchable tribology of ferroelectrics

Artificially induced asymmetric tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a nanoscale scanning probe where down domains having lower friction coefficient than up domains can be used as smart masks as they show slower wear rate than up domains. This asymmetry is enabled by flexoelectrically coupled polarization in the up and down domains under a sufficiently high contact force. Moreover, we determine that this polarization-sensitive tribological asymmetry is universal across ferroelectrics with different chemical composition and crystalline symmetry. Finally, using this switchable tribology and multi-pass patterning with a domain-based dynamic smart mask, we demonstrate three-dimensional nanostructuring exploiting the asymmetric wear rates of up and down domains, which can, furthermore, be scaled up to technologically relevant (mm-cm) size. These findings establish that ferroelectrics are electrically tunable tribological materials at the nanoscale for versatile applications.

physics.app-ph↗

arXiv2021

Dynamic response and roughening of ferroelectric domain walls driven at planar electrode edges

Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using piezoresponse force microscopy we analyse the growth and roughness of ferroelectric domains in epitaxial thin film Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$, driven by the electric fields at straight edges of planar electrodes at two different temperatures. This device relevant geometry allows us to confirm that the domain walls are well described as 1-dimensional monoaffine elastic interfaces driven in random-bond disorder. However, we observe a progressive increase of roughness as initially flat domain walls move through the disorder landscape, which could prove a significant limiting factor for racetrack-type memories using ferroelectrics.

cond-mat.dis-nn↗

arXiv2021

A numerical study of the statistics of roughness parameters for fluctuating interfaces

Self-affine rough interfaces are ubiquitous in experimental systems, and display characteristic scaling properties as a signature of the nature of disorder in their supporting medium, i.e. of the statistical features of its heterogeneities. Different methods have been used to extract roughness information from such self-affine structures, and in particular their scaling exponents and associated prefactors. Notably, for an experimental characterization of roughness features, it is of paramount importance to properly assess sample-to-sample fluctuations of roughness parameters. Here, by performing scaling analysis based on displacement correlation functions in real and reciprocal space, we compute statistical properties of the roughness parameters. As an ideal, artifact-free reference case study and particularly targeting finite-size systems, we consider three cases of numerically simulated one-dimensional interfaces: (i) elastic lines under thermal fluctuations and free of disorder, (ii) directed polymers in equilibrium with a disordered energy landscape, and (iii) elastic lines in the critical depinning state when the external applied driving force equals the depinning force set by disorder. Our results shows that sample-to-sample fluctuations are rather large when measuring the roughness exponent. These fluctuations are also relevant for roughness amplitudes. Therefore a minimum of independent interface realizations (at least a few tens in our numerical simulations) should be used to guarantee sufficient statistical averaging, an issue often overlooked in experimental reports.

cond-mat.dis-nn↗

arXiv2020

Local and correlated studies of humidity-mediated ferroelectric thin film surface charge dynamics

Electrochemical phenomena in ferroelectrics are of particular interest for catalysis and sensing applications, with recent studies highlighting the combined role of the ferroelectric polarisation, applied surface voltage and overall switching history. Here, we present a systematic Kelvin probe microscopy study of the effect of relative humidity and polarisation switching history on the surface charge dissipation in ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ thin films. We analyze the interaction of surface charges with ferroelectric domains through the framework of physically constrained unsupervised machine learning matrix factorization, Dictionary Learning, and reveal a complex interplay of voltage-mediated physical processes underlying the observed signal decays. Additional insight into the observed behaviours is given by a Fitzhugh-Nagumo reaction-diffusion model, highlighting the lateral spread and charge passivation process contributors within the Dictionary Learning analysis.

cond-mat.mtrl-sci↗

arXiv2017

Effect of uniaxial strain on the optical Drude scattering in graphene

Graphene is a mechanically robust 2D material promising for flexible optoelectronic applications. However, its electromagnetic properties under strain are experimentally poorly understood. Here we present the far-infrared transmission spectra of large-area chemical-vapor deposited monolayer graphene on a polyethylene terephthalate substrate subjected to uniaxial strain. The effective strain value is calibrated using the Raman spectroscopy and corrected for a relaxation of wrinkles and folds seen directly by atomic-force microscopy. We find that while the Drude weight and the Fermi level remain constant, the scattering rate increases by more than 10% per 1% of applied strain, showing a high level of reproducibility during strain cycling. As a result, the electronic mobility and optical absorption of graphene at terahertz and lower frequencies appear to also be sensitive to strain, which opens pathways to control these key parameters mechanically. We suggest that such a functionality can be potentially used in flexible optoelectronic and microelectromechanical systems based on graphene. By combining our findings with existing theoretical models, we discuss the possible mechanisms of strain-controlled Drude scattering.

cond-mat.mes-hall↗

arXiv2015

Subcritical switching dynamics and humidity effects in nanoscale studies of domain growth in ferroelectric thin films

Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ thin films was studied using biased scanning probe microscopy tips. While linear and logarithmic dependence of domain size on tip bias and writing time, respectively, are well known, we report an additional linear dependence on relative humidity in the 28-65% range. We map out the switched domain size as a function of both the tip bias and the applied pulse time and describe a growth-limited regime for very short pulses and a nucleation-limited regime for very low tip bias. Using "interrupted-switching" measurements, we probe the nucleation regime with subcritical pulses and identify a surprisingly long relaxation time on the order of 100 ms, which we relate to ionic redistribution both on the surface and within the thin film itself.

cond-mat.mes-hall↗

arXiv2013

Identification of a strong contamination source for graphene in vacuum systems

To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene due to chemical species generated by common ion high-vacuum gauges. The effect --reversible upon exposing graphene to air-- is significant, as doping rates can largely exceed 10^{12} cm^{-2}/hour, depending on pressure and the relative position of the gauge and the graphene device. It is important to be aware of the phenomenon, as its basic manifestation can be mistakenly interpreted as vacuum-induced desorption of p-dopants.

cond-mat.mes-hall↗

arXiv2013

Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices

To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance. Directly comparing ferroelectric Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3 field effect transistors, we show that the two effects strongly compete, with transient charge dynamics initially masking up to 40% of the ferroelectric field effect. For applications, it is therefore crucial to maximize the quality of the ferroelectric film and the interface with the carbon nanotube to take full advantage of the switchable polarization.

cond-mat.mes-hall↗

arXiv2012

Minimum domain size and stability in carbon nanotube-ferroelectric devices

Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr0.2Ti0.8)O3 thin films was studied using different field geometries and compared to numerical simulations and theoretical predictions. With carbon nanotubes as electrodes, continuous nanodomains as small as 9 nm in radius in a 270 nm thick film could be switched, remaining stable for over 20 months. Defect pinning of domain walls appears to play a key role in stabilizing such domains, below the predicted thermodynamic size limit.

cond-mat.mes-hall↗

arXiv2012

Thermal quench effects on ferroelectric domain walls

Using piezoresponse force microscopy on epitaxial ferroelectric thin films, we have measured the evolution of domain wall roughening as a result of heat-quench cycles up to 735C, with the effective roughness exponent ζ changing from 0.25 to 0.5. We discuss two possible mechanisms for the observed ζ increase: a quench from a thermal 1-dimensional configuration, and from a locally-equilibrated pinned configuration with a crossover from a 2- to 1-dimensional regime. We find that the post-quench spatial structure of the metastable states, qualitatively consistent with the existence of a growing dynamical length scale whose ultra slow evolution is primarily controlled by the defect configuration and heating process parameters, makes the second scenario more plausible. This interpretation suggests that pinning is relevant in a wide range of temperatures, and in particular, that purely thermal domain wall configurations might not be observable in this glassy system. We also demonstrate the crucial effects of oxygen vacancies in stabilizing domain structures.

cond-mat.dis-nn↗