arXiv subjects

Paul Chekhonin

Publications and source records attributed to Paul Chekhonin.

7 recordsLinked to original sources

arXiv2026

Quantum metric quadrupoles in elemental bismuth thin films

The nonlinear transport properties of solids are deeply rooted in the quantum geometry of their electronic wavefunctions, which is encoded in the quantum geometric tensor. Its real part, known as the quantum metric, has been recently identified as a primary origin of nonlinear transport in quantum materials where time-reversal and inversion symmetries are not simultaneously present. Consequently, the influence of the quantum metric on the largest class of materials -- non-magnetic and centrosymmetric systems -- has remained entirely elusive. Here, we demonstrate that third-order transport in centrosymmetric materials hosting relativistic fermions is governed by quantum metric quadrupoles (QMQs). We show that these QMQs can originate from both the non-Abelian quantum geometry of bulk three-dimensional Dirac fermions and the Abelian quantum geometry of spin-orbit-coupled surface states. In stark contrast to all zero-field nonlinear transport signatures known to date, the current driven by these QMQs persists as a robust, non-vanishing observable even in highly scalable polycrystalline thin films. We experimentally validate this quantum metric footprint by measuring nonlinear transport in thin films of elemental bismuth, observing a robust, surface-dominated, and broadband third-harmonic generation that persists up to room temperature. Our findings uncover a hidden role of the quantum metric in polycrystalline systems, establishing third-order nonlinear transport as a high-precision diagnostic tool of wavefunction geometry under ambient conditions.

cond-mat.mes-hall↗

arXiv2025

Data-efficient U-Net for Segmentation of Carbide Microstructures in SEM Images of Steel Alloys

Understanding reactor-pressure-vessel steel microstructure is crucial for predicting mechanical properties, as carbide precipitates both strengthen the alloy and can initiate cracks. In scanning electron microscopy images, gray-value overlap between carbides and matrix makes simple thresholding ineffective. We present a data-efficient segmentation pipeline using a lightweight U-Net (30.7~M parameters) trained on just \textbf{10 annotated scanning electron microscopy images}. Despite limited data, our model achieves a \textbf{Dice-S{\o}rensen coefficient of 0.98}, significantly outperforming the state-of-the-art in the field of metallurgy (classical image analysis: 0.85), while reducing annotation effort by one order of magnitude compared to the state-of-the-art data efficient segmentation model. This approach enables rapid, automated carbide quantification for alloy design and generalizes to other steel types, demonstrating the potential of data-efficient deep learning in reactor-pressure-vessel steel analysis.

cs.LG↗

arXiv2025

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by \b{eta}-radiation

Potential structural modifications of graphene exposed to gaseous tritium are important for membrane-based hydrogen isotope separation. Such modifications cannot be explained by electron irradiation alone. Instead, tritiation, caused by the tritium radicals remaining after the decay, is the primary effect causing the modification of the graphene surface, as confirmed by confocal Raman spectroscopy. The effect of the interaction of tritium atoms with the graphene surface exceeds that of electron irradiation at the average energy of the beta particles (5.7 keV). Compared to previously investigated high electron doses in the absence of tritium, remarkably low concentrations of tritium already induce a significant amount of sp3- and vacancy-type defects at short exposure times. Our findings are supported by molecular dynamics simulations of graphene bombardment with tritium atoms. As a consequence, tritium saturation of graphene may alter its permeability for hydrogen isotopes, thus affecting potential applications.

cond-mat.mtrl-sci↗

arXiv2023

Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films

The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling and occurs in non-centrosymmetric crystals with large Berry curvature -- an emergent magnetic field encoding the geometric properties of electronic wavefunctions. The design of (opto)electronic devices based on the NLHE is however hindered by the fact that this nonlinear effect typically appears at low temperatures and in complex compounds characterized by Dirac or Weyl electrons. Here, we show a strong room temperature NLHE in the centrosymmetric elemental material bismuth synthesized in the form of technologically relevant polycrystalline thin films. The ($1\,1\,1$) surface electrons of this material are equipped with a Berry curvature triple that activates side jumps and skew scatterings generating nonlinear transverse currents. We also report a boost of the zero field nonlinear transverse voltage in arc-shaped bismuth stripes due to an extrinsic geometric classical counterpart of the NLHE. This electrical frequency doubling in curved geometries is then extended to optical second harmonic generation in the terahertz (THz) spectral range. The strong nonlinear electrodynamical responses of the surface states are further demonstrated by a concomitant highly efficient THz third harmonic generation which we achieve in a broad range of frequencies in Bi and Bi-based heterostructures. Combined with the possibility of growth on CMOS-compatible and mechanically flexible substrates, these results highlight the potential of Bi thin films for THz (opto)electronic applications.

cond-mat.mes-hall↗

arXiv2023

Universal radiation tolerant semiconductor

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films

Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.

cond-mat.supr-con↗

arXiv2016

Hall-plot of the phase diagram for Ba(Fe1-xCox)2As2

The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by $R_H^{-1} = -en$, where $e$ is the charge of the carrier, and $n$ is the concentration. However, it is well known that in the critical region near a quantum phase transition, as it was demonstrated for cuprates and heavy fermions, the Hall coefficient exhibits strong temperature and doping dependencies, which can not be described by such a simple expression, and the interpretation of the Hall coefficient for Fe-based superconductors is also problematic. Here, we investigate thin films of Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ with compressive and tensile in-plane strain in a wide range of Co doping. Such in-plane strain changes the band structure of the compounds, resulting in various shifts of the whole phase diagram as a function of Co doping. We show that the resultant phase diagrams for different strain states can be mapped onto a single phase diagram with the Hall number. This universal plot is attributed to the critical fluctuations in multiband systems near the antiferromagnetic transition, which may suggest a direct link between magnetic and superconducting properties in the BaFe$_2$As$_2$ system.

cond-mat.supr-con↗