arXiv subjects

Paul Crowell

Publications and source records attributed to Paul Crowell.

3 recordsLinked to original sources

arXiv2023

Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-P\'erot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

cond-mat.mes-hall↗

arXiv2018

Optimization of Time-Resolved Magneto-optical Kerr Effect Signals for Magnetization Dynamics Measurements

Recently magnetic storage and magnetic memory have shifted towards the use of magnetic thin films with perpendicular magnetic anisotropy (PMA). Understanding the magnetic damping in these materials is crucial, but normal Ferromagnetic Resonance (FMR) measurements face some limitations. The desire to quantify the damping in materials with PMA has resulted in the adoption of Time-Resolved Magneto-optical Kerr Effect (TR-MOKE) measurements. In this paper, we discuss the angle and field dependent signals in TR-MOKE, and utilize a numerical algorithm based on the Landau-Lifshitz-Gilbert (LLG) equation to provide information on the optimal conditions to run TR-MOKE measurements.

cond-mat.mes-hall↗

arXiv2014

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the $\mathit{n-}$GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/$n$-GaAs hetrostructures, including Co$_{2}$MnSi/$n$-GaAs, Co$_{2}$FeSi/$n$-GaAs and Fe/$n$-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

cond-mat.mtrl-sci↗