arXiv subjects

Paul Nguyen

Publications and source records attributed to Paul Nguyen.

4 recordsLinked to original sources

arXiv2026

Reducing non-linear effects in Kelvin Probe Force Microscopy of back-gated 2D semiconductors

In 2D field effect transistors the gate electrostatically dopes the 2D semiconductor (2DSC) channel, tuning the Fermi level. In principle, Kelvin probe force microscopy (KPFM) can detect the Fermi level, and its dependence on gate bias as well as position, potentially directly yielding band gaps, contact barriers, spatial nonuniformities, and sub-gap densities of states in such devices. However, KPFM relies on an oscillating probe voltage which itself electrostatically dopes the 2DSC, potentially creating a nonlinear response. Here, we show that when a suitably thin hBN back-gate dielectric is used, the KPFM signal agrees well with expectations, as explained by a quasistatic charge-balance model. Corresponding experimental results are consistent with the literature values of the bandgaps of monolayer and trilayer WSe2. With this approach, the widely available technique of KPFM should find improved utility and new uses in the study of 2D devices.

cond-mat.mes-hall↗

arXiv2019

The False Positive Control Lasso

In high dimensional settings where a small number of regressors are expected to be important, the Lasso estimator can be used to obtain a sparse solution vector with the expectation that most of the non-zero coefficients are associated with true signals. While several approaches have been developed to control the inclusion of false predictors with the Lasso, these approaches are limited by relying on asymptotic theory, having to empirically estimate terms based on theoretical quantities, assuming a continuous response class with Gaussian noise and design matrices, or high computation costs. In this paper we show how: (1) an existing model (the SQRT-Lasso) can be recast as a method of controlling the number of expected false positives, (2) how a similar estimator can used for all other generalized linear model classes, and (3) this approach can be fit with existing fast Lasso optimization solvers. Our justification for false positive control using randomly weighted self-normalized sum theory is to our knowledge novel. Moreover, our estimator's properties hold in finite samples up to some approximation error which we find in practical settings to be negligible under a strict mutual incoherence condition.

stat.ML↗

arXiv2016

Edge conduction in monolayer WTe2

A two-dimensional topological insulator (2DTI) is guaranteed to have a helical 1D edge mode in which spin is locked to momentum, producing the quantum spin Hall effect and prohibiting elastic backscattering at zero magnetic field. No monolayer material has yet been shown to be a 2DTI, but recently the Weyl semimetal WTe2 was predicted to become a 2DTI in monolayer form if a bulk gap opens. Here, we report that at temperatures below about 100 K monolayer WTe2 does become insulating in its interior, while the edges still conduct. The edge conduction is strongly suppressed by in-plane magnetic field and is independent of gate voltage, save for mesoscopic fluctuations that grow on cooling due to a zero-bias anomaly which reduces the linear-response conductance. Bilayer WTe2 also becomes insulating at low temperatures but does not show edge conduction. Many of these observations are consistent with monolayer WTe2 being a 2DTI. However, the low temperature edge conductance, for contacts spacings down to 150 nm, is below the quantized value,

cond-mat.mes-hall↗

arXiv2005

Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced magnetization switching is observed with a critical current density of about 8e6 A/cm2. The attribution of the switching to the spin-transfer effect is supported by a current-induced dR/R value identical to the one obtained from the R versus H measurements. Furthermore, the critical switching current density has clear dependence on the applied magnetic field, consistent with what has been observed previously in the case of spin-transfer induced switching in metallic multilayer systems.

cond-mat.other↗