arXiv subjects

Paul Seifert

Publications and source records attributed to Paul Seifert.

13 recordsLinked to original sources

arXiv2026

Second-Harmonic Imaging of Magnetic Domains in Thin Film Hematite

Hematite is an antiferromagnetic oxide and candidate altermagnetic insulator whose N\'eel order reorients from an easy-axis to an easy-plane phase at the Morin transition. Interpreting altermagnetic transport and symmetry sensitive optical responses requires knowledge of the N\'eel vector orientation relative to the crystal axes and of the domain structure within the probed device. Here, we show that polarization-resolved second-harmonic generation (SHG) microscopy resolves magnetic symmetry and domains in epitaxial (0001)-oriented hematite films. Across the Morin temperature, the SHG polarization anisotropy evolves from an approximately sixfold pattern consistent with the easy-axis orientation to pronounced twofold patterns consistent with the easy-plane orientation. A symmetry analysis based on magnetic-dipole and electric-quadrupole contributions reproduces this evolution. Importantly, the interference between SHG amplitudes that are odd and even under reversal of the magnetic order renders opposite N\'eel-vector orientations optically distinguishable. Consistently, opposite directions of an applied in-plane magnetic field produce distinct SHG responses in our experiments. Using this magnetic contrast, we image micrometer-scale domains, their reorganization across the Morin transition, and their reconfiguration under magnetic and thermal cycling, including a remanent change after cycling through the spin-flop transition. These results establish SHG microscopy as a local probe of magnetic symmetry, N\'eel-vector orientation, and domain evolution in hematite films.

cond-mat.mtrl-sci↗

arXiv2025

Visible and Terahertz Nonlinear Responses in the Topological Noble Metal Dichalcogenide PdTe2

Nonlinear processes can offer pathways to next-generation sensors and frequency mixing devices to overcome modern imaging, detection, and communication challenges. In this article, we report on strong second and third-order nonlinear optical responses in visible and terahertz (THz) light in single crystals of the noble metal dichalcogenide PdTe$_2$. We find that buried conduction and valence topological surface states of PdTe$_2$ lead to resonant optical second-harmonic generation. On the other hand, although the nonlinear responses obtained with THz excitation are not close to this resonance, they can be clearly observed in reflection geometry, even in the presence of broadband excitation, where optical filters are not necessary to observe the enhanced odd-order higher harmonic output. By carefully considering the radiative photocurrent framework of stimulated THz emission, we are able to extract fingerprints of both second- and third-order processes in the THz regime, and show that PdTe$_2$ is a promising material candidate for radio frequency rectification, frequency mixing, and beam focusing.

cond-mat.mtrl-sci↗

arXiv2024

Evidence of heavy fermion physics in the thermoelectric transport of magic angle twisted bilayer graphene

It has been recently postulated, that the strongly correlated flat bands of magicangle twisted bilayer graphene (MATBG) can host coexisting heavy and light carriers. While transport and spectroscopic measurements have shown hints of this behavior, a more direct experimental proof is still lacking. Here, we explore the thermoelectric response of MATBG through the photo-thermoelectric (PTE) effect in gate-defined MATBG pn-junctions. At low temperatures, we observe sign-preserving, fillingdependent oscillations of the Seebeck coefficient at non-zero integer fillings of the moiré lattice, which suggest the preponderance of one carrier type despite tuning the Fermi level from hole to electron doping of the correlated insulator. Furthermore, at higher temperatures, the thermoelectric response provides distinct evidence of the strong electron correlations in the unordered, normal state. We show that our observations are naturally accounted for by the interplay of light and long-lived and heavy and short-lived electron bands near the Fermi level at non-zero integer fillings. Our observations firmly establish the electron and hole asymmetry of the correlated gaps in MATBG, and shows excellent qualitative agreement with the recently developed topological heavy fermion model (THF).

cond-mat.mes-hall↗

arXiv2022

Two-dimensional cuprate nanodetector with single photon sensitivity at T = 20 K

Detecting light at the single-photon level is one of the pillars of emergent photonic technologies. This is realized through state-of-the-art superconducting detectors that offer efficient, broadband and fast response. However, the use of superconducting thin films with low TC limits their operation temperature below 4K. In this work, we demonstrate proof-of-concept nanodetectors based on exfoliated, two-dimensional cuprate superconductor Bi2Sr2CaCu2O8-δ (BSCCO) that exhibit single-photon sensitivity at telecom wavelength at a record temperature of T = 20K. These non-optimized devices exhibit a slow (ms) reset time and a low detection efficiency (10^(-4)). We realize the elusive prospect of single-photon sensitivity on a high-TC nanodetector thanks to a novel approach, combining van der Waals fabrication techniques and a non-invasive nanopatterning based on light ion irradiation. This result paves the way for broader application of single-photon technologies, relaxing the cryogenic constraints for single-photon detection at telecom wavelength.

cond-mat.supr-con↗

arXiv2020

Ultra-fast calorimetric measurements of the electronic heat capacity of graphene

Heat capacity is an invaluable quantity in condensed matter physics, yet it has been so far experimentally inaccessible in two-dimensional (2D) van der Waals (vdW) materials, owing to their ultra-fast thermal relaxation times and the lack of suitable nano-scale thermometers. Here, we demonstrate a novel thermal relaxation calorimetry scheme that allows the first measurements of the electronic heat capacity of graphene Ce. It is enabled by the grouping of a radio-frequency Johnson noise thermometer, which can measure the electronic temperature Te with a measurement sensitivity of δTe ~ 20 mK, and an ultra-fast photo-mixed optical heater, which can simultaneously modulate Te with a frequency of up to Ω=0.2 THz. This combination allows record sensitive and record fast measurements of the electronic heat capacity Ce < 10^(-19) J/K, with an electronic thermal relaxation time τe < 10^(-13), representing orders of magnitude improvements as compared to previous state-of-the-art calorimeters. These features embody a breakthrough in heat capacity metrology of nano-scale and low-dimensional systems, and provide a new avenue for the investigation of their thermodynamic quantities.

cond-mat.mes-hall↗

arXiv2020

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.

physics.app-ph↗

arXiv2020

A liquid nitrogen cooled superconducting transition edge sensor with ultra-high responsivity and GHz operation speeds

Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and radio-astronomy. However, their broader use is held back by the low operation temperatures which require expensive cryostats. Here, we demonstrate a nitrogen cooled superconducting transition edge sensor, which shows orders of magnitude improved performance characteristics of any superconducting detector operated above 77K, with a responsivity of 9.61x10^4 V/W, noise equivalent power of 15.9 fW/Hz-1/2 and operation speeds up to GHz frequencies. It is based on van der Waals heterostructures of the high temperature superconductor Bi2Sr2CaCu2O8, which are shaped into nano-wires with ultra-small form factor. To highlight the versatility of the detector we demonstrate its fabrication and operation on a telecom grade SiN waveguide chip. Our detector significantly relaxes the demands of practical applications of superconducting detectors and displays its huge potential for photonics based quantum applications.

physics.app-ph↗

arXiv2018

Photo-induced anomalous Hall effect in the type-II Weyl-semimetal WTe2 at room-temperature

Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin-lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests, that a helical modulation of an otherwise isotropic spin-current is the underlying mechanism of the anomalous Hall effect.

cond-mat.mtrl-sci↗

arXiv2018

Switchable quantized conductance in topological insulators revealed by the Shockley-Ramo theorem

Crystals with symmetry-protected topological order, such as topological insulators, promise coherent spin and charge transport phenomena even in the presence of disorder at room temperature. Still, a major obstacle towards an application of topological surface states in integrated circuits is a clear, reliable, and straightforward read-out independent of a prevailing charge carrier density in the bulk. Here, we demonstrate how to image and read-out the local conductance of helical surface modes in the prototypical topological insulators Bi2Se3 and BiSbTe3. We apply the so-called Shockley-Ramo theorem to design an optoelectronic probe circuit for the gapless surface states, and surprisingly find a precise conductance quantization at 1e2/h. The unprecedented response is a clear signature of local spin-polarized transport, and it can be switched on and off via an electrostatic field effect. The macroscopic, global read-out scheme is based on the displacement current resistivity, and it does not require coherent transport between electrodes.6 It provides a generalizable platform for studying further non-trivial gapless systems such as Weyl-semimetals and quantum spin-Hall insulators.

cond-mat.mes-hall↗

arXiv2017

Spin Hall photoconductance in a 3D topological insulator at room temperature

Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a spin locked perpendicularly to it in the surface plane. While the principal spin generation capability of topological insulators is well established, comparatively little is known about the interaction of the spins with external stimuli like polarized light. We observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi2Te2Se platelets for perpendicular incidence of light. The same edges exhibit also a finite bias-dependent Kerr angle, indicative of spin accumulation induced by a transversal spin Hall effect in the bulk states of the Bi2Te2Se platelets. A symmetry analysis shows that the helical photoconductance is distinct to common longitudinal photoconductance and photocurrent phenomena, but consistent with the accumulated spins being transported in the side facets of the platelets. Our findings demonstrate that spin effects in the facets of 3D topological insulators can be addressed and read-out in optoelectronic devices even at room temperatures.

cond-mat.mes-hall↗

arXiv2015

Quantized one-dimensional edge channels with strong spin-orbit coupling in 3D topological insulators

A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and manipulated on macroscopic length scales, for instance across the gate channel of a spin-transistor. Here, we report on millimeter-scale edge channels with a conductance quantized at a single quantum 1 $\times$ $e^2/h$ at zero magnetic field. The quantum transport is found at the lateral edges of three-dimensional topological insulators made of bismuth chalcogenides. The data are explained by a lateral, one-dimensional quantum confinement of non-topological surface states with a strong Rashba spin-orbit coupling. This edge transport can be switched on and off by an electrostatic field-effect. Our results are fundamentally different from an edge transport in quantum spin Hall insulators and quantum anomalous Hall insula-tors.

cond-mat.mes-hall↗

arXiv2015

Chemical Potential Fluctuations in Topological Insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Films Visualized by Photocurrent Spectroscopy

We investigate the photocurrent properties of the topological insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ on SrTiO$_3$-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations. Hereby, we can quantify the magnitude of the disorder potential to be in the meV range. The results further suggest a dominating photo-thermoelectric current generated in the surface states in such nanoscale constrictions.

cond-mat.mtrl-sci↗

arXiv2015

Ultrafast photocurrents and THz generation in single InAs-nanowires

To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs-nanowires, which is interpreted in terms of a dominating photo-Dember effect. The results are relevant for nanowire-based optoelectronic and photovoltaic applications as well as for the design of nanowire-based THz sources.

cond-mat.mes-hall↗