arXiv subjects

Paul Syers

Publications and source records attributed to Paul Syers.

13 recordsLinked to original sources

arXiv2017

Beyond Triplet: Unconventional Superconductivity in a Spin-3/2 Topological Semimetal

In all known fermionic superfluids, Cooper pairs are composed of spin-1/2 quasi-particles that pair to form either spin-singlet or spin-triplet bound states. The "spin" of a Bloch electron, however, is fixed by the symmetries of the crystal and the atomic orbitals from which it is derived, and in some cases can behave as if it were a spin-3/2 particle. The superconducting state of such a system allows pairing beyond spin-triplet, with higher spin quasi-particles combining to form quintet or septet pairs. Here, we report evidence of unconventional superconductivity emerging from a spin-3/2 quasiparticle electronic structure in the half-Heusler semimetal YPtBi, a low-carrier density noncentrosymmetric cubic material with a high symmetry that preserves the $p$-like $j=3/2$ manifold in the Bi-based $Γ_8$ band in the presence of strong spin-orbit coupling. With a striking linear temperature dependence of the London penetration depth, the existence of line nodes in the superconducting order parameter $Δ$ is directly explained by a mixed-parity Cooper pairing model with high total angular momentum, consistent with a high-spin fermionic superfluid state. We propose a $\mathbf{k\cdot p}$ model of the $j=3/2$ fermions to explain how a dominant $J$=3 septet pairing state is the simplest solution that naturally produces nodes in the mixed even-odd parity gap. Together with the underlying topologically non-trivial band structure, the unconventional pairing in this system represents a truly novel form of superfluidity that has strong potential for leading the development of a new generation of topological superconductors.

cond-mat.supr-con↗

arXiv2015

One-dimensional edge state transport in a topological Kondo insulator

Topological insulators, with metallic boundary states protected against time-reversal-invariant perturbations, are a promising avenue for realizing exotic quantum states of matter including various excitations of collective modes predicted in particle physics, such as Majorana fermions and axions. According to theoretical predictions, a topological insulating state can emerge from not only a weakly interacting system with strong spin-orbit coupling, but also in insulators driven by strong electron correlations. The Kondo insulator compound SmB6 is an ideal candidate for realizing this exotic state of matter, with hybridization between itinerant conduction electrons and localized $f$-electrons driving an insulating gap and metallic surface states at low temperatures. Here we exploit the existence of surface ferromagnetism in SmB6 to investigate the topological nature of metallic surface states by studying magnetotransport properties at very low temperatures. We find evidence of one-dimensional surface transport with a quantized conductance value of $e^2/h$ originating from the chiral edge channels of ferromagnetic domain walls, providing strong evidence that topologically non-trivial surface states exist in SmB6.

cond-mat.str-el↗

arXiv2015

Ambipolar surface state transport in non-metallic stoichiometric Bi$_2$Se$_3$ crystals

Achieving true bulk insulating behavior in Bi$_2$Se$_3$, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-doping effect caused by selenium vacancies, whose extra electrons shift the chemical potential into the bulk conduction band. We report a new synthesis method for achieving stoichiometric Bi$_2$Se$_3$ crystals that exhibit nonmetallic behavior in electrical transport down to low temperatures. Hall effect measurements indicate the presence of both electron- and hole-like carriers, with the latter identified with surface state conduction and the achievement of ambipolar transport in bulk Bi$_2$Se$_3$ crystals without gating techniques. With carrier mobilities surpassing the highest values yet reported for topological surface states in this material, the achievement of ambipolar transport via upward band bending is found to provide a key method to advancing the potential of this material for future study and applications.

cond-mat.mtrl-sci↗

arXiv2015

Topological $R$PdBi half-Heusler semimetals: a new family of non-centrosymmetric magnetic superconductors

We report superconductivity and magnetism in a new family of topological semimetals, the ternary half Heusler compounds $R$PdBi ($R$ : rare earth). In this series, tuning of the rare earth $f$-electron component allows for simultaneous control of both lattice density via lanthanide contraction, as well as the strength of magnetic interaction via de Gennes scaling, allowing for a unique tuning of both the normal state band inversion strength, superconducting pairing and magnetically ordered ground states. Antiferromagnetism with ordering vector (0.5,0.5,0.5) occurs below a Neéel temperature that scales with de Gennes factor $dG$, while a superconducting transition is simultaneously linearly suppressed. With superconductivity appearing in a system with non-centrosymmetric crystallographic symmetry, the possibility of spin-triplet Cooper pairing with non-trivial topology analogous to that predicted for the normal state electronic structure provides a unique and rich opportunity to realize both predicted and new exotic excitations in topological materials.

cond-mat.supr-con↗

arXiv2015

Ambipolar Surface State Thermoelectric Power of Topological Insulator Bi2Se3

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near charge neutrality point and at low temperatures, the gate dependent thermoelectric power follows the semiclassical Mott relation using the expected surface state density of states, but is larger than expected at high electron doping, possibly reflecting a large density of states in the bulk gap. The thermoelectric power factor shows significant enhancement near the electron-hole puddle carrier density ~ 0.5 x 1012 cm-2 per surface at all temperatures. Together with the expected reduction of lattice thermal conductivity in low dimensional structures, the results demonstrate that nanostructuring and Fermi level tuning of three dimensional topological insulators can be promising routes to realize efficient thermoelectric devices.

cond-mat.mes-hall↗

arXiv2014

Tuning bulk and surface conduction in topological Kondo insulator SmB6

Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo insulator compound SmB6 are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e^2/h and electron-like, exhibits a field-effect mobility of 133 cm^2/V/s and a large carrier density of ~2x10^{14}/cm^2, in good agreement with recent photoemission results. With the ability to gate-modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.

cond-mat.str-el↗

arXiv2012

Coherent Topological Transport on the Surface of Bi2Se3

The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in the symplectic universality class and uniquely among 2D systems remains metallic and cannot be localized by (time-reversal symmetric) disorder. However, in finite-size samples inter-surface coupling can destroy the topological protection. The question arises: At what size can a thin TI sample be treated as having decoupled topological surface states? We show that weak anti-localization(WAL) is extraordinarily sensitive to sub-meV coupling between top and bottom topological surfaces, and the surfaces of a TI film may be coherently coupled even for thicknesses as large as 12 nm. For thicker films we observe the signature of a true 2D topological metal: perfect weak anti-localization in quantitative agreement with two decoupled surfaces in the symplectic symmetry class.

cond-mat.mes-hall↗

arXiv2012

Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation from the nearby bulk valence band, while above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime linear resistivity vs. temperature reflects intrinsic electron-acoustic phonon scattering. Quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/\hbarvF = 4.7 Å-1. This strong phonon scattering in the Bi2Se3 surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 μS per surface and ~10,000 cm2/Vs.

cond-mat.mtrl-sci↗

arXiv2012

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate the most fundamental signature of the STI: ambipolar metallic electronic transport in the topological surface of an insulating bulk. Here we show that the surfaces of thin (<10 nm), low-doped Bi2Se3 (\approx10^17/cm3) crystals are strongly electrostatically coupled, and a gate electrode can completely remove bulk charge carriers and bring both surfaces through the Dirac point simultaneously. We observe clear surface band conduction with linear Hall resistivity and well-defined ambipolar field effect, as well as a charge-inhomogeneous minimum conductivity region. A theory of charge disorder in a Dirac band explains well both the magnitude and the variation with disorder strength of the minimum conductivity (2 to 5 e^2/h per surface) and the residual (puddle) carrier density (0.4 x 10^12 cm^-2 to 4 x 10^12 cm^-2). From the measured carrier mobilities 320 cm^2/Vs to 1,500 cm^2/Vs, the charged impurity densities 0.5 x 10^13 cm^-2 to 2.3 x 10^13 cm^-2 are inferred. They are of a similar magnitude to the measured doping levels at zero gate voltage (1 x 10^13 cm^-2 to 3 x 10^13 cm^-2), identifying dopants as the charged impurities.

cond-mat.mes-hall↗

arXiv2012

Topological insulator quantum dot with tunable barriers

Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV, with additional features implying excited states.

cond-mat.mes-hall↗

arXiv2010

Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals

While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3, a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such states, nominally undoped single crystals of Bi2Se3 with carrier densities approaching 10^16 cm^-3 and very high mobilities exceeding 2 m^2 V^-1 s^-1 have been studied. A comprehensive analysis of Shubnikov de Haas oscillations, Hall effect, and optical reflectivity indicates that the measured electrical transport can be attributed solely to bulk states, even at 50 mK at low Landau level filling factor, and in the quantum limit. The absence of a significant surface contribution to bulk conduction demonstrates that even in very clean samples, the surface mobility is lower than that of the bulk, despite its topological protection.

cond-mat.mes-hall↗

arXiv2010

Dimensional Tuning of the Magnetic-Structural Transition in A(Fe$_{1-x}$Co$_x$)$_2$As$_2$ (A=Sr,Ba)

A phase diagram of superconducting Sr(Fe$_{1-x}$Co$_x$)$_2$As$_2$ as a function of doping (x) is determined by a series of thermodynamic and transport measurements on single crystals. On comparison with a similar phase diagram for Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ (Co-doped Ba122), we find that the increased dimensionality of Co-doped Sr122 results in a single first-order-like transition where the magnetic and structural transitions coincide, unlike the case of Co-doped Ba122 that exhibits split quasicontinuous magnetic and structural transitions. We relate this dimensionally-tuned splitting in the magnetic and structural transitions to the relative size of superconducting temperatures in these materials.

cond-mat.supr-con↗

arXiv2009

Characterization of chaotic motion in a rotating drum

Numerous studies have demonstrated the potential for simple fluid plus particle systems to produce complicated dynamical behavior. In this work, we study a horizontal rotating drum filled with pure glycerol and three large, heavy spheres. The rotation of the drum causes the spheres to cascade and tumble and thus interact with each other. We find several different behaviors of the spheres depending on the drum rotation rate. Simpler states include the spheres remaining well separated, or states where two or all three of the spheres come together and cascade together. We also see two more complex states, where two or three of the spheres move chaotically. We characterize these chaotic states and find that in many respects they are quite unpredictable. This experiment serves as a simple model system to demonstrate chaotic behavior in fluid dynamical systems.

physics.flu-dyn↗