arXiv subjects

Paul van der Heide

Publications and source records attributed to Paul van der Heide.

4 recordsLinked to original sources

arXiv2025

Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach

Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient integrated circuit devices. Yet, the use of EUV light results in ionization driven chemistry within the imaging materials of lithography, the photoresists. The complex interplay of ionization, generation of primary and secondary electrons, and the subsequent chemical mechanisms leading to image formation in photoresists has been notoriously difficult to study. In this work, we deploy photoemission spectroscopy with a 92 eV EUV light source combined with first-principles simulations to unravel the chemical changes occurring during exposure in a model chemically amplified photoresist. The results reveal a surprising chemical reaction pathway, namely the EUV-induced breakdown of the photoacid generator (PAG), which is a critical component in the EUV mechanism. This previously unobserved reaction mechanism manifests as changes in intensity of the valence band peaks of the EUV photoemission spectrum, which are linked to degradation of the PAG via an advanced atomistic simulation framework. Our combined experimental and theoretical approach shows that EUV photoemission can simultaneously resolve chemical dynamics and the production of primary and secondary electrons, giving unique insights into the chemical transformation of photoresist materials. Our results pave the way for utilizing accessible, table-top EUV spectroscopy systems for observing EUV photoresist chemical dynamics, with the potential for time-resolved measurements of photoemission processes in the future.

cond-mat.mtrl-sci↗

arXiv2025

Fundamental Understanding of Exposure and Process Chemistry for Enhanced Lithography and Stability of Metal Oxide Resists

Metal oxide resists (MORs) have shown great promise for high resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high volume manufacturing. However, MORs have recently been shown to exhibit sensitivity to process conditions and environment, leading to critical dimension (CD) variation. While this variation can be reduced with proper process control, there is little knowledge on how these aspects affect the image formation mechanism. To bridge these knowledge gaps, we deploy a coordinated, fundamentals-focused approach to yield deep insights into MOR exposure and process chemistry. Our results on a model MOR, an n-butyl Sn-Oxo system, reveal how parameters such as exposure dose, post-exposure bake temperature, and atmospheric species influence the image formation mechanism. Our results, and the coordinated approach using correlative spectroscopies, provide a strong foundation for understanding the image formation mechanism in MOR materials with potential to link mechanistic aspects to CD variation.

cond-mat.mtrl-sci↗

arXiv2024

Dissociative photoionization of EUV lithography photoresist models

The dissociative photoionization of \textit{tert}-butyl methyl methacrylate, a monomer unit found in many ESCAP resists, was investigated in a gas phase photoelectron photoion coincidence experiment employing extreme ultraviolet (EUV) synchrotron radiation at 13.5 nm. It was found that the interaction of EUV photons with the molecules leads almost exclusively to dissociation. However, the ionization can also directly deprotect the ester function, thus inducing the solubility switch wanted in a resist film. These results serve as a building block to reconstruct the full picture of the mechanism in widely used chemically amplified resist thin films, provide a knob to tailor more performant resist materials, and will aid interpreting advanced ultrafast time-resolved experiments.

cond-mat.mtrl-sci↗

arXiv2006

Depth evolution of YBa2Cu3O7-d ultrathin films probed by X-ray photoemission spectroscopy

X-ray photoemission spectroscopy has been used to investigate the depth dependent crystal structures and chemical compositions of sequentially chemical-etched YBa2Cu3O7-d (YBCO) ultrathin film superconductors. In the near-interface region the crystal structure is severely oxygen deficient and of tetragonal symmetry. We consider this a revelation of retarded oxygen diffusion into the O(1) sites during the post-deposition annealing in the presence of interface mismatch strain. Near the free surface, the oxygen-deficiency was much alleviated because of the partial strain relaxation and the crystal symmetry becomes orthorhombic. Compared with as-deposited films of equivalent thickness, which is less oxygen deficient and shows superconducting transition, the stripped-down near-interface layer exhibits no sign of superconductivity.

cond-mat.mtrl-sci↗