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Paula Giraldo-Gallo

Publications and source records attributed to Paula Giraldo-Gallo.

6 recordsLinked to original sources

Bridging atomic and mesoscopic length scales with Replica Scanning Tunneling Microscopy: Visualizing the atomic lattice of UTe$_2$ and the atomic scale superconducting gap modulations of FeSe close to micron length scales

Scanning Tunneling Microscopy is a cornerstone technique for visualizing the electronic density of states with atomic resolution (typically below 0.1 nm). While the field of view of most STM setups extends up to a few microns, obtaining atomic resolution over these large areas is often impractical and excessively time-consuming. This is due to the need to acquire maps with a point number reaching $10^7$ or more with a full current or conductance vs voltage curve at each point. The standard procedure is to make large scale maps and then select small regions to zoom-in for high-resolution atomic scale analysis. However, this approach fails to address a question which is often critical: Does a specific atomic-scale modulation of the electronic density of states persist over much larger, mesoscopic length scales? Here we present a new method: Replica STM (R-STM), that overcomes this limitation, allowing the study of atomic-scale phenomena up to micron length scales. We obtained new large-area STM tunneling conductance maps in UTe$_2$ and FeSe, spanning areas over 200 nm in size. In these large scale maps we discovered periodic signals with wavelengths significantly exceeding interatomic distances. We show that these large-wavelength periodic signals are replicas of the underlying atomic-scale density of states modulations. R-STM leverages these replica signals to efficiently track atomic-scale features over large areas. We discuss the influence of phase slips, disorder and defects in the replicas. Our results suggest that atomic scale modulations of the superconducting density of states could persist over large length scales in FeSe. R-STM provides a new capability for STM to compare atomic scale with micrometer scale phenomena. The proof of principle of R-STM can be extended to any other scanning probe microscopy experiment where a periodic signal is traced as a function of position.

cond-mat.supr-con↗

Pressure-tuning of electronic structure of CeTe3 probed by femtosecond collective mode spectroscopy

We use femtosecond optical spectroscopy to study the evolution of coherent order-parameter dynamics in the prototypical charge-density-wave (CDW) system CeTe3 under hydrostatic pressure. The CDW transition temperature decreases from approximately 570 K at ambient pressure to near room temperature at approximately 6 GPa. The pressure dependence of the order-parameter recovery dynamics indicates enhanced electron-phonon coupling with increasing pressure, implying that CDW suppression is driven predominantly by the reduction in Fermi-surface nesting. Above 7 GPa, no evidence of CDW order is observed down to cryogenic temperatures. Concurrently, the relaxation dynamics exhibit significant slowing down at low-temperatures, consistent with emerging heavy-electron behaviour due to pressure-enhanced hybridization between localized Ce 4f levels and itinerant carriers.

cond-mat.str-el↗

Exploring Structural and Electronic Properties of Topological Insulator/Graphene Nano-heterostructures

There is great interest in the study of topological insulator-based heterostructures due to expected emerging phenomena. However, a challenge of topological insulator (TI) research is the contribution of the bulk conduction to the TI surface states. Both strain engineering and thickness control routes, which have been proposed to compensate for bulk doping, can be accessed through the use of nano-heterostructures consisting of topological insulator nanostructures grown on 2D materials. In this work, we report the synthesis of TI/graphene nano-heterostructures based on Bi2Te3 and Sb2Te3 nanoplatelets (NPs) grown on single-layer graphene. Various techniques were used to characterize this system in terms of morphology, thickness, composition, and crystal quality. We found that most of the obtained NPs are mainly < 20 [nm] thick with thickness-dependent crystal quality, observed by Raman measurements. Thinner NPs (1 or 2 QL) tend to replicate the topography of the underlying SLG, according to roughness analysis, and observed buckling features. Finally, we show preliminary studies of their band structure obtained by LT-STM (STS) and by DFT. We observe a highly negative doping which can be attributed to the presence of defects.

cond-mat.mes-hall↗

High-Resolution Scanning Tunneling Microscope and its Adaptation for Local Thermopower Measurements in 2D Materials

We present the design, fabrication and discuss the performance of a new combined high-resolution Scanning Tunneling and thermopower Microscope (STM/SThEM). We also describe the development of the electronic control, the user interface, the vacuum system, and arrangements to reduce acoustical noise and vibrations. We demonstrate the microscope performance with atomic-resolution topographic images of Highly oriented pyrolytic graphite (HOPG) and local thermopower measurements in the semimetal Bi2Te3 sample. Our system offers a tool to investigate the relationship between electronic structure and thermoelectric properties at the nanoscale.

cond-mat.mtrl-sci↗

Charge density wave modulation and gap measurements in CeTe$_3$

We present a study of charge density wave (CDW) ordering in CeTe$_3$ at room temperature using a scanning tunneling microscope and Raman spectroscopy. Two characteristic CDW ordering wavevectors obtained from the Fourier analysis are assessed to be $|{\bf \textbf{c}}^\ast-{\bf q}|=4.19\,{\rm nm}^{-1}$ and $|{\bf q}|=10.26\,{\rm nm}^{-1}$ where $|{\bf c}^\ast| = 2π/c$ is the reciprocal lattice vector. The scanning tunneling spectroscopy measurements, along with inelastic light (Raman) scattering measurements, show a CDW gap $Δ_{\rm max}$ of approximately 0.37 eV. In addition to the CDW modulation, we observe an organization of the Te sheet atoms in an array of alternating V- and N- groups along the CDW modulation, as predicted in the literature.

cond-mat.mtrl-sci↗

Disorder Driven Metal-Insulator Transition in BaPb$_{1-x}$Bi$_x$O$_3$ and Inference of Disorder-Free Critical Temperature

We performed point-contact spectroscopy tunneling measurements on single crystal BaPb$_{1-x}$Bi$_x$O$_3$ for $x=0$, $0.19$, $0.25$, and $0.28$ at temperatures ranging from $T=2-40$ K and find a suppression in the density of states at low bias-voltages, which has not previously been reported. The classic square root dependence observed in the density of states fits within the theoretical framework of disordered metals, and we find that the correlation gap disappears around a critical concentration $x_c=0.30$. We also report a linear dependence of the zero-temperature conductivity, $σ_0$, with concentration, where $σ_0=0$ at $x_c=0.30$. We conclude that a disorder driven metal-insulator transition occurs in this material before the onset of the charge disproportionated charge density wave insulator. We explore the possibility of a scaling theory being applicable for this material. In addition, we estimate the disorder-free critical temperature using theory developed by Belitz and Fukuyama et. al. and compare these results to Ba$_{1-x}$K$_x$BiO$_3$.

cond-mat.supr-con↗