Searcharxiv⌕ Search

arXiv subjects

Paulina J. Prusik

Publications and source records attributed to Paulina J. Prusik.

2 recordsLinked to original sources

Local multiferroic ordering at room temperature in collinear magnetoelectric antiferromagnets induced by flexo-Zeeman coupling

Spin-driven multiferroicity attracts significant interest due to its tunability and inherently strong magnetoelectric coupling. While this mechanism induces sizeable electric polarization, it typically occurs at low temperatures and in complex materials. In the simple oxide, the magnetoelectric antiferromagnet Cr$_2$O$_3$, we experimentally demonstrate the existence of specific domain walls that act as room-temperature multiferroic regions. This behavior stems from an anisotropic crystal-symmetry-dependent mechanism of exchange origin, which is applicable to a broad class of bipartite antiferromagnets. The key signature is the magnetization occurring at antiferromagnetic textures, driven by the flexo-Zeeman interaction. These findings establish a foundation for exploring high-temperature spin-driven multiferroicity for magnetoelectric spin-orbit memory and logic applications.

cond-mat.mtrl-sci↗

Antiferromagnetic nanoscale bit arrays of magnetoelectric Cr$_2$O$_3$ thin films

Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100-nm-thick magnetoelectric Cr$_2$O$_3$ films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the domain structure evolves from a multidomain state for larger bits to a single domain state for the smallest bits. Based on spin-lattice simulations, we show that the physics of the domain pattern formation in granular AFM bits is primarily determined by the energy dissipation upon cooling, which results in motion and expelling of AFM domain walls of the bit. Our results provide a way towards the fabrication of single domain AFM-bit-patterned memory devices and the exploration of the interplay between AFM nanostructures and their geometric shape.

cond-mat.mtrl-sci↗