arXiv subjects

Paulina Jureczko

Publications and source records attributed to Paulina Jureczko.

4 recordsLinked to original sources

arXiv2025

Ferroelectric switching control of spin current in graphene proximitized by In$_2$Se$_3$

By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by ferroelectric In$_2$Se$_3$ monolayer. Through first-principles calculations and tight-binding modeling, we studied the electronic structure of graphene/In$_2$Se$_3$ heterostructure for twist angles of 0$^{\circ}$ and 17.5$^{\circ}$, considering both ferroelectric polarizations. We discover that switching the ferroelectric polarization reverses the sign of the charge-to-spin conversion coefficients, acting as a chirality switch of the in-plane spin texture in graphene. For the twisted heterostructure, we observed emergence of unconventional radial Rashba field for one ferroelectric polarization direction. Additionally, we demonstrated that the Rashba phase can be directly extracted from the ratio of conversion efficiency coefficients, providing a straightforward approach to characterize the in-plane spin texture in graphene. All the unique features of the studied graphene/In$_2$Se$_3$ heterostructure can be experimentally detected, offering a promising approach for developing advanced spintronic devices with enhanced performance and efficiency.

cond-mat.mtrl-sci↗

arXiv2025

Optimizing optical properties of bilayer PtSe$_2$: the role of twist angle and hydrostatic pressure

Two-dimensional van der Waals materials offer exceptional tunability in their electronic properties. In this paper, we explore how twisting and hydrostatic pressure can be leveraged to engineer the electronic and optical characteristics of bilayer PtSe$_2$. Using state-of-the-art first-principles density functional methods, we calculate the electronic band structure and the imaginary part of the dielectric function across multiple twist angles and pressure values. We find, that at the twist angle $θ=13.17^\circ$, bilayer PtSe$_2$, which is intrinsically an indirect semiconductor, transforms into a direct-gap semiconductor. Moreover, we demonstrate that hydrostatic out-of-plane pressure boosts near-infrared optical activity, further expanding the functional potential of PtSe$_2$ bilayers. The demonstrated high tunability of electronic and optical properties by twisting and pressure opens new application directions of PtSe$_2$ in optoelectronics.

cond-mat.mtrl-sci↗

arXiv2025

Strain-tuning of spin anisotropy in single-layer phosphorene: insights from Elliott-Yafet and Dyakonov-Perel spin relaxation rates

Materials and systems that exhibit persistent spin texture provide a platform for creating robust spin states that can be used in quantum computing, memory storage, and other advanced technological applications. In this paper we show that persistent spin-texture in single-layer phosphorene electrons close to the $Γ$ point, subjected to the finite perpendicular electric field, can be achieved by appropriately tuning the extrinsic spin-orbit coupling strength using the tensile strain of about $1.2\%$ in the zigzag direction. This is confirmed by detailed numerical investigations of the effects of strain on the intrinsic and extrinsic spin-orbit coupling, and by the effective spin-orbit Hamiltonian of phosphorene electrons and holes around the $Γ$ point, assuming the presence of the perpendicular electric field. Furthermore, the calculated spin relaxation rates due to the Dyakonov-Perel mechanism indicate a giant anisotropy of the in-plane spin, up to $10^5$, which is directly related to the discovered persistent spin texture of phosphorene electrons close to the $Γ$ point. %%%%%%%% We also show, that strain can reverse the anisotropy of spin mixing parameter $b^2$ connected to the Elliott-Yafet spin relaxation mechanism which dominates spin relaxation in phosphorene. We find the conditions under which Elliott-Yafet spin lifetime anisotropy can be largely enhanced due to synergy of spin mixing and g-factor anisotropy. %%%%%%%%%% Our results suggest that spin texture in phosphorene can be modulated by strain, enabling its potential usage in the field of spintronics.

cond-mat.mes-hall↗

arXiv2024

Probing type-II Ising pairing using the spin-mixing parameter

The immunity of Ising superconductors to external magnetic fields originates from a spin locking of the paired electrons to an intrinsic Zeeman-like field. The spin-momentum locking in non-centrosymmetric crystalline materials leads to type-I Ising pairing in which the direction of the intrinsic field can be deduced from the spin expectation values. Conversely, in centrosymmetric crystals the electron spins locked to the orbitals can form Ising type-II pairs consisting of spin-orbit split doublets. Due to time-reversal symmetry, the doublets are spin degenerate, making it difficult to read the spin polarization of bands and the direction of spin-orbit fields. Here we present an efficient approach to determine the direction of the intrinsic field using the spin-mixing parameter $b^2$. Using first principles calculations based on the density functional theory, we study monolayer transition metal dichalcogenide superconductors PdTe$_2$, NbTe$_2$, and TiSe$_2$ with the 1T structure. We calculate $b^2$ for individual Fermi pockets and provide a general picture of possible Ising type-II pairing within the full Brillouin zone. In order to complement our first principles results, we use group theory to provide a detailed picture of spin-orbit coupling and spin mixing in the relevant bands forming Fermi pockets. We demonstrate that contrary to the anticipated effects of spin-orbit locking, not every spin-orbit split spin doublet actively participates in Ising pairing. Finally, by connecting the spin-mixing parameter $b^2$ with the intrinsic out-of-plane Zeeman field we estimate the upper in-plane critical magnetic field.

cond-mat.mes-hall↗