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Paulius Imbrasas

Publications and source records attributed to Paulius Imbrasas.

2 recordsLinked to original sources

High-Efficiency Deep Blue Single-Gaussian Europium(II) Emitters and their Emitter-Host Interactions

Eu(II) complexes are attractive emitters for deep-blue organic light-emitting diodes (OLEDs) due to their narrow, parity-allowed 4f-5d emission; however, their implementation in vacuum-processed OLEDs has remained limited. Here, we introduce a new molecular design concept for Eu(II) emitters, in which a crown-ether ligand is combined with carborate anions to define the coordination environment and improve steric shielding of the europium center. Based on this design, we present two emitters that combine narrow deep-blue photoluminescence with quantum yields approaching 90% and sufficient thermal stability for vacuum deposition. As the excited state dynamics of this emitter class are different from most conventional OLED emitters and the pathway to maximum luminescence efficiency in thin films is not fully established, we study interactions between Eu(II) complexes and the host environment, based on density functional theory and time-resolved experiments. We identify steric shielding of the Eu(II) core and energetic confinement of the excited 5d electron, defined by molecular design as key factors governing efficient luminescence, providing a roadmap for rational design of Eu(II) emitters. Together, these results establish a basis for higher-efficiency and deeper blue OLEDs incorporating Eu(II) emitters.

physics.app-ph

A simple strategy to measure the contact resistance between metals and doped organic films

Charge injection from electrodes into doped organic films is a widespread technology used in the majority of state-of-the-art organic semiconductor devices. Although such interfaces are commonly considered to form Ohmic contacts via strong band bending, an experiment that directly measures the contact resistance has not yet been demonstrated. In this study, we use a simple metal/doped organic semiconductor/metal stack and study its voltage-dependent resistance. A transport layer thickness variation proves that the presented experiment gains direct access to the contact resistance of the device. We can quantify that for an operating current density of 10mA/cm2 the investigated material system exhibits a voltage drop over the metal/organic interface of about 200mV, which can be reduced by more than one order of magnitude when employing an additional injection layer. The presented experiment proposes a simple strategy to measure the contact resistance between any metal and doped organic film without applying numerical tools or elaborate techniques. Furthermore, the simplistic device architecture allows for very high, homogeneous, and tunable electric fields within the organic layer, which enables a clear investigation of the Poole-Frenkel effect.

physics.app-ph