arXiv subjects

Pavel Dudin

Publications and source records attributed to Pavel Dudin.

At least 19 recordsLinked to original sources

arXiv2026

Field-induced asymmetric band flattening and ideal quantum geometry in rhombohedral graphene

Rhombohedral graphene exhibits an exceptionally diverse array of correlated phases that depend sensitively on the displacement field. Compiling reported phases into a unified phase diagram reveals a pronounced field-dependent electron-hole asymmetry: correlated states on the hole-doped side emerge at small displacement fields, whereas the fractional quantum anomalous Hall effect (FQAHE) is observed exclusively on the electron-doped side under large displacement fields. This stark asymmetry highlights the need to understand how flat bands evolve with displacement fields. Here, we directly visualize the field-induced electron-hole asymmetric band flattening in rhombohedral pentalayer graphene (R5G) using nanospot angle-resolved photoemission spectroscopy with electrostatic gating. Beyond gap opening and spectral weight redistribution indicative of layer polarization, the gating field drives a strongly asymmetric modification of the flat bands: the flat valence band (FVB) evolves into an M-shaped dispersion at high field, whereas the flat conduction band (FCB) progressively flattens with increasing field. Comparison with calculations identifies critical parameters governing the band curvature of R5G, from which the resulting finite Berry curvature and near-ideal quantum geometry support the emergence of topological phases under electron doping at large fields. These results establish a direct link between the asymmetric phase diagram, band structure evolution, and quantum geometry, providing a microscopic framework for understanding correlated and topological phases in rhombohedral graphene.

cond-mat.mes-hall↗

arXiv2025

Moiré-modulated $Γ$ valley in twisted bilayer and twisted double-bilayer MoTe$_2$

Twisted MoTe$_2$ hosts intriguing correlated quantum phenomena including the fractional quantum anomalous Hall effect in twisted bilayer (t-BL) MoTe$_2$ near 3.7$^\circ$, which is sensitive to the twist angle and moiré superlattices. Here, we directly visualize the twist-angle-modulated electronic structure of t-BL and twisted double-bilayer (t-DBL) near this critical angle. We find that the moiré superlattice not only modifies the relative energy between $Γ$ and K valleys in t-BL MoTe$_2$, but also strongly reconstructs the $Γ$ valley for both t-BL and t-DBL. Specifically, the deep $p_z$-derived band at $Γ$ exhibits a distinct splitting that systematically varies with increasing twist angle. Theoretical analysis suggests that this modulation arises from the twist-angle-dependent lattice relaxation, especially interfacial corrugations. Our work directly visualizes the moiré-modulated electronic structure and provides key spectroscopic information of lattice relaxation and interlayer interactions underlying the physics of twisted MoTe$_2$.

cond-mat.str-el↗

arXiv2025

Tunable electronic band structure in WSSe van der Waals Alloys

The electronic structure of semiconducting 2D materials such as transition metal dichalcogenides (TMDs) is known to be tunable by its environment, from simple external fields applied with electrical contacts up to complex van der Waals heterostructure assemblies. However, conventional alloying from reference binary TMD compounds to composition-controlled ternary alloys also offers unexplored opportunities. In this work, we use nano-angle resolved photoemission spectroscopy (nano-ARPES) and density functional theory (DFT) calculations to study the structural and electronic properties of different alloy compositions of bulk WS2(1-x)Se2x. Our results demonstrate the continuous variation of the band structure and the progressive evolution of the valence band splitting at the K points from 420 to 520 meV in bulk WS2(1-x)Se2x. We also carried out scanning tunneling microscopy (STM) measurements and DFT to understand the possible S or Se substitutions variants in WS2(1-x)Se2x alloys, with different local atomic configurations. Our work opens up perspectives for the fine control of the band dispersion in van der Waals materials and demonstrate how the band structure can be tuned in bulk TMDs. The collected information can serve as a reference for future applications.

cond-mat.mtrl-sci↗

arXiv2025

Hybridization in van der Waals epitaxy of PtSe2/h-BN and PtSe2/graphene heterostructures

Van der Waals (vdW) heterostructures, which combine bi-dimensional materials of different properties, enable a range of quantum phenomena. Here, we present a comparative study between the electronic properties of mono- and bi-layer of platinum diselenide (PtSe2) grown on hexagonal boron nitride (h-BN) and graphene substrates using molecular beam epitaxy (MBE). Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), the electronic structure of PtSe2/graphene and PtSe2/h-BN vdW heterostructures are investigated in systematic manner. In contrast to PtSe2/h-BN, the electronic structure of PtSe2/graphene reveals the presence of interlayer hybridization between PtSe2 and the graphene, which is evidenced by minigap openings in the π-band of graphene. Furthermore, our measurements show that the valence band maximum (VBM) of monolayer PtSe2 is located at the Γ point with different binding energies of about -0.9 eV and -0.55 eV relative to the Fermi level on h-BN and graphene and substrates, respectively. Our results represent a significant advance in the understanding of electronic hybridization between TMDs and different substrates, and they reaffirm the crucial role of the substrate in any nanoelectronic applications based on van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2025

Moiré enhanced flat band in rhombohedral graphene

The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron correlation, nontrivial topology and spontaneous time-reversal symmetry breaking. Recently, FQAHE has been realized in aligned rhombohedral pentalayer graphene on BN superlattice (aligned R5G/BN), where the topological flat band is modulated by the moiré potential. However, intriguingly, the FQAHE is observed only when electrons are pushed away from the moiré interface. The apparently opposite implications from these experimental observations, along with different theoretical models, have sparked intense debates regarding the role of the moiré potential. Unambiguous experimental observation of the topological flat band as well as moiré bands with energy and momentum resolved information is therefore critical to elucidate the underlying mechanism. Here by performing nanospot angle-resolved photoemission spectroscopy (NanoARPES) measurements, we directly reveal the topological flat band electronic structures of R5G, from which key hopping parameters essential for determining the fundamental electronic structure of rhombohedral graphene are extracted. Moreover, a comparison of electronic structures between aligned and non-aligned samples reveals that the moiré potential plays a pivotal role in enhancing the topological flat band in the aligned sample. Our study provides experimental guiding lines to narrow down the phase space of rhombohedral graphene, laying an important foundation for understanding exotic quantum phenomena in this emerging platform.

cond-mat.mes-hall↗

arXiv2024

Correlated topological flat bands in rhombohedral graphite

Flat bands and nontrivial topological physics are two important topics of condensed matter physics. With a unique stacking configuration analogous to the Su-Schrieffer-Heeger (SSH) model, rhombohedral graphite (RG) is a potential candidate for realizing both flat bands and nontrivial topological physics. Here we report experimental evidence of topological flat bands (TFBs) on the surface of bulk RG, which are topologically protected by bulk helical Dirac nodal lines via the bulk-boundary correspondence. Moreover, upon {\it in situ} electron doping, the surface TFBs show a splitting with exotic doping evolution, with an order-of-magnitude increase in the bandwidth of the lower split band, and pinning of the upper band near the Fermi level. These experimental observations together with Hartree-Fock calculations suggest that correlation effects are important in this system. Our results demonstrate RG as a new platform for investigating the rich interplay between nontrivial band topology, correlation effects, and interaction-driven symmetry-broken states.

cond-mat.str-el↗

arXiv2024

Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene

Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric phase diagram under an out-of-plane electric field, exhibiting correlated insulating state and ferromagnetic state respectively when reversing the field direction. Revealing how the electronic structure evolves with electric field is critical for providing a better understanding of such asymmetric field-tunable properties. Here we report the experimental observation of field-tunable dichotomic electronic structure of tMBG by nanospot angle-resolved photoemission spectroscopy (NanoARPES) with operando gating. Interestingly, selective enhancement of the relative spectral weight contributions from monolayer and bilayer graphene is observed when switching the polarity of the bias voltage. Combining experimental results with theoretical calculations, the origin of such field-tunable electronic structure, resembling either tBLG or twisted double-bilayer graphene (tDBG), is attributed to the selectively enhanced contribution from different stacking graphene layers with a strong electron-hole asymmetry. Our work provides electronic structure insights for understanding the rich field-tunable physics of tMBG.

cond-mat.mes-hall↗

arXiv2024

Evolution of flat band and role of lattice relaxations in twisted bilayer graphene

Magic-angle twisted bilayer graphene (MATBG) exhibits correlated phenomena such as superconductivity and Mott insulating state related to the weakly dispersing flat band near the Fermi energy. Beyond its moiré period, such flat band is expected to be sensitive to lattice relaxations. Thus, clarifying the evolution of the electronic structure with twist angle is critical for understanding the physics of MATBG. Here, we combine nanospot angle-resolved photoemission spectroscopy and atomic force microscopy to resolve the fine electronic structure of the flat band and remote bands, and their evolution with twist angles from 1.07$^\circ$ to 2.60$^\circ$. Near the magic angle, dispersion is characterized by a flat band near the Fermi energy with a strongly reduced bandwidth. Moreover, near 1.07$^\circ$, we observe a spectral weight transfer between remote bands at higher binding energy and extract the modulated interlayer spacing near the magic angle. Our work provides direct spectroscopic information on flat band physics and highlights the role of lattice relaxations.

cond-mat.mes-hall↗

arXiv2023

Nano-ARPES investigation of twisted bilayer tungsten disulfide

The diverse and intriguing phenomena observed in twisted bilayer systems, such as graphene and transition metal dichalcogenides, prompted new questions about the emergent effects that they may host. However, the practical challenge of realizing these structures on a scale large enough for spectroscopic investigation, remains a significant hurdle, resulting in a scarcity of direct measurements of the electronic band structure of twisted transition metal dichalcogenide bilayers. Here we present a systematic nanoscale angle-resolved photoemission spectroscopy investigation of bulk, single layer, and twisted bilayer WS2 with a small twist angle of 4.4°. The experimental results are compared with theoretical calculations based on density functional theory along the high-symmetry directions Γ-K and Γ-M. Surprisingly, the electronic band structure measurements suggest a structural relaxation occurring at 4.4° twist angle, and formation of large, untwisted bilayer regions.

physics.chem-ph↗

arXiv2023

Electronic band structure changes across the antiferromagnetic phase transition of exfoliated MnPS$_3$ probed by $μ$-ARPES

Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due to their photochemical sensitivity. Here, we provide micron-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS$_3$ above and below the Néel temperature down to one monolayer. The favorable comparison with density functional theory calculations enables to identify the orbital character of the observed bands. Consistently, we find pronounced changes across the Néel temperature for bands that consist of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films demonstrating the predominant 2D character of MnPS$_3$. The novel access is transferable to other MPX$_3$ materials (M: transition metal, P: phosphorus, X: chalcogenide) providing a multitude of antiferromagnetic arrangements.

cond-mat.mtrl-sci↗

arXiv2023

Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical doping by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron doping and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge doping opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.

cond-mat.mes-hall↗

arXiv2023

Current driven insulator-to-metal transition without Mott breakdown in Ca$_2$RuO$_4$

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potential applications in, e.g., neuromorphic computing. While the driving force of the IMT is poorly understood, it has been thought to be a breakdown of the Mott state. Using in operando angle-resolved photoemission spectroscopy, we show that this is not the case: The current-driven conductive phase arises with only a minor reorganisation of the Mott state. This can be explained by the co-existence of structurally different domains that emerge during the IMT. Electronic structure calculations show that the boundaries between domains of slightly different structure lead to a drastic reduction of the overall gap. This permits an increased conductivity, despite the persistent presence of the Mott state. This mechanism represents a paradigm shift in the understanding of IMTs, because it does not rely on the simultaneous presence of a metallic and an insulating phase, but rather on the combined effect of structurally inhomogeneous Mott phases.

cond-mat.str-el↗

arXiv2022

Observation of flat $Γ$ moiré bands in twisted bilayer WSe$_2$

The recent observation of correlated phases in transition metal dichalcogenide moiré systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and momentum-space mapping techniques to study moiré superlattice effects in 57.4$^{\circ}$ twisted WSe$_2$ (tWSe$_2$). Our data reveal a split-off flat band that derives from the monolayer $Γ$ states. Using advanced data analysis, we directly quantify the moiré potential from our data. We further demonstrate that the global valence band maximum in tWSe$_2$ is close in energy to this flat band but derives from the monolayer K-states which show weaker superlattice effects. These results constrain theoretical models and open the perspective that $Γ$-valley flat bands might be involved in the correlated physics of twisted WSe$_2$.

cond-mat.str-el↗

arXiv2022

Programming moiré patterns in 2D materials by bending

Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to random strain. Here, we demonstrate a new way to manipulate the moiré patterns in hetero- and homo-bilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with highly tunable wavelength and ultra-low disorder. Our results pave the way for detailed studies of ultra-low disorder moiré systems and the realization of precise strain-engineered devices.

cond-mat.mes-hall↗

arXiv2022

Observation of Γ-valley moiré bands and emergent hexagonal lattice in twisted transition metal dichalcogenides

Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systematic investigation on the electronic structure of 5.1° twisted bilayer WSe2 that hosts correlated insulating and zero-resistance states. Interestingly, contrary to one's expectation, moiré bands were observed only at Γ-valley but not K-valley in μ-ARPES measurements; and correspondingly, our STM measurements clearly identified the real-space honeycomb- and Kagome-shaped charge distributions at the moiré length scale associated with the Γ-valley moiré bands. These results not only reveal the unsual valley dependent moiré-modified electronic structure in twisted transition metal dichalcogenides, but also highlight the Γ-valley moiré bands as a promising platform for exploring strongly correlated physics in emergent honeycomb and Kagome lattices at different energy scales.

cond-mat.str-el↗

arXiv2022

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localized near the K point of the Brillouin zone and has a width of several hundred meVs. By combining ARPES measurements with density functional theory (DFT) calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band at K is determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Gamma point. The energy difference between the VBM at Gamma and the K point is of -60 meV, which is a stark difference compared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K.

cond-mat.mtrl-sci↗

arXiv2020

Spectral functions of CVD grown MoS$_2$ monolayers after chemical transfer onto Au surface

The recent rise of van der Waals (vdW) crystals has opened new prospects for studying versatile and exotic fundamental physics with future device applications such as twistronics. Even though the recent development on Angle-resolved photoemission spectroscopy (ARPES) with Nano-focusing optics, making clean surfaces and interfaces of chemically transferred crystals have been challenging to obtain high-resolution ARPES spectra. Here, we show that by employing nano-ARPES with submicron sized beam and polystyrene-assisted transfer followed by annealing process in ultra-high vacuum environment, remarkably clear ARPES spectral features such as spin-orbit splitting and band renormalization of CVD-grown, monolayered MoS2 can be measured. Our finding paves a way to exploit chemically transferred crystals for measuring high-resolution ARPES spectra to observe exotic quasi-particles in vdW heterostructures.

cond-mat.mes-hall↗

arXiv2020

Observation and control of maximal Chern numbers in a chiral topological semimetal

Topological semimetals feature protected nodal band degeneracies characterized by a topological invariant known as the Chern number (C). Nodal band crossings with linear dispersion are expected to have at most |C|=4, which sets an upper limit to the magnitude of many topological phenomena in these materials. Here we show that the chiral crystal PdGa displays multifold band crossings, which are connected by exactly four surface Fermi-arcs, thus proving that they carry the maximal Chern number magnitude of 4. By comparing two enantiomers, we observe a reversal of their Fermi-arc velocities, which demonstrates that the handedness of chiral crystals can be used to control the sign of their Chern numbers.

cond-mat.mes-hall↗