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Pavel Salev

Publications and source records attributed to Pavel Salev.

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Signal amplification in simple metal-insulator transition devices

Signal dissipation in large-scale neural networks can lead to information loss and ultimately to computational failures, necessitating local signal amplification at neuron - synapse connections. In biological nervous systems, axons are responsible for local signal amplification. Translating axon functionality into hardware, i.e., the ability to amplify and transmit signals without loss, is non-trivial because emulating the human brain implies building networks composed of ~10 billion interconnected neurons, each requiring a dedicated compact and scalable amplifier. Here, we demonstrate signal amplification in simple two-terminal devices made of a metal-insulator transition material. By operating the devices on the verge of the phase transition and taking advantage of negative differential resistance, we achieve robust signal amplification up to a factor of ~11.5. We also demonstrate the amplification of spiking sequences generated by a real neuristor, opening new exciting opportunities for the direct integration of artificial neurons and axons. The amplification can be controlled by easily adjustable experimental parameters, including DC bias, AC excitation, series resistance, and temperature. We further propose a model that predicts the gain using readily observable transport characteristics. Our results establish a framework for developing and optimizing axon-like amplification functionalities in nonlinear electronic materials.

cond-mat.mtrl-sci

Inhibitory neuristor based on metal-to-insulator transition

Mimicking the collective excitatory and inhibitory behaviors of biological neurons remains a critical challenge in the development of neuromorphic computing systems that rival the complexity and performance of the human brain. Volatile high-to-low resistance switching in insulator-to-metal transition (IMT) materials produces an abrupt increase in current flow, resembling neuronal excitation. This electrical excitation enables IMT materials to be driven into a neuron-like spiking self-oscillation regime using simple RC circuits. Here, we report a new type of self-oscillation dynamics that occurs in the opposite class of metal-to-insulator transition (MIT) materials. Electrical triggering of the MIT suppresses current flow, resembling neuronal inhibition. Using a prototypical MIT material, we experimentally demonstrate inhibitory-like self-oscillations in two-terminal switching devices incorporated into a simple RL circuit. Our results show robust ~0.1 - 1 MHz electric current oscillations with minimal cycle-to-cycle variation, which can be controlled by varying the applied DC voltage, temperature, and inductance. This work demonstrates a new type of inhibitory MIT-based artificial neuron that can complement the excitatory functionalities of IMT-based neuristors in biologically plausible neuromorphic systems.

cond-mat.mtrl-sci

Electrically induced ferromagnetism in an irradiated complex oxide

In metal-insulator transition materials, a small perturbation can shift the delicate balance between competing or coexisting electronic phases, leading to dramatic changes of the material's properties. Using La0.7Sr0.3MnO3, a prototypical metal-insulator transition manganite, we show that local low-dose focused ion beam irradiation increases resistivity by several orders of magnitude, converting the ferromagnetic-metal ground state into a paramagnetic-insulator. Surprisingly, we found that applying electric stimuli to the irradiated material induces a non-thermal insulator-to-metal transition, which results in low-power, repeatable volatile resistive switching. Magnetotransport measurements revealed that this voltage-induced metallic phase in the irradiated material is ferromagnetic, exhibiting clear anisotropic magnetoresistance. This work, thus, reports the discovery of a unique material in which the electrical triggering of the electronic phase transition results in the onset of magnetism, in stark contrast to the magnetic order suppression commonly observed in other metal-insulator transition switching materials. We demonstrate that local focused ion beam irradiation provides new and exciting opportunities to engineer electronic and magnetic functionalities that can find practical applications ranging from spintronics to neuromorphic hardware.

cond-mat.str-el

Enhanced stochasticity in irradiated vanadium oxide oscillators

Insulator-to-metal transition materials are highly sensitive to even minute deviations of stoichiometry, lattice defects, and disorder, which provides opportunities to engineer their electrical switching characteristics. Using V2O3 as a prototypical metal-insulator transition resistive switching material, we demonstrate that localized focused ion beam irradiation can induce stochastic oscillatory dynamics in simple two-terminal switching devices. After irradiating the material, we observed an unusual dynamic regime where the voltage induced metallic state momentarily collapses into an insulating state, which results in a rapid current flickering that is qualitatively different from the conventional current spiking in a Pearson-Anson type oscillatory circuit implemented using the pristine material. Furthermore, the current flickering timing in the irradiated devices becomes progressively more random and more sparse with increasing input voltage, resulting in nonlinear and nondeterministic oscillatory behavior. The irradiation also leads to a dramatic reduction in switching power required to induce the current oscillations. These results are elucidated through random resistor network simulations which indicate that a small number of local sites can control the electrical metal-insulator transition switching properties in large devices with high defect concentration. Our results show that selective focused ion beam irradiation provides exciting prospects for engineering and tuning novel stochastic behaviors in emergent technologies that rely on the intrinsic randomness of physical processes.

cond-mat.dis-nn

Voltage control of spin resonance in phase change materials

Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic changes in spin excitations are also expected. The transition metal oxide La0.7Sr0.3MnO3 (LSMO) is a ferromagnetic metal at low temperatures and a paramagnetic insulator above room temperature. When LSMO is in its metallic phase a critical electrical bias has been shown to lead to an MIT that results in the formation of a paramagnetic resistive barrier transverse to the applied electric field. Using spin-transfer ferromagnetic resonance spectroscopy, we show that even for electrical biases less than the critical value that triggers the MIT, there is magnetic phase separation with the spin-excitation resonances varying systematically with applied bias. Thus, applied voltages provide a means to alter spin resonance characteristics of interest for neuromorphic circuits.

physics.app-ph

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V2O3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V2O3, especially the strain-induced large variations along the c-axis. Engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode.

cond-mat.mtrl-sci

Local strain inhomogeneities during the electrical triggering of a metal-insulator transition revealed by the x-ray microscopy

Electrical triggering of a metal-insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an insulating matrix or an insulating barrier splitting a conducting matrix. When the MIT triggering is driven by electrothermal effects, the temperature of the filament or barrier can be substantially higher than the rest of material. Using x-ray microdiffraction and dark-field x-ray microscopy, we show that electrothermal MIT triggering leads to the development of an inhomogeneous strain profile across the switching device, even when the material does not undergo a 1st order structural phase transition coinciding with the MIT. Diffraction measurements further reveal evidence of lattice distortions and twinning occurring within the MIT switching device, highlighting a qualitative distinction between the electrothermal process and equilibrium thermal lattice expansion in nonlinear electrical systems. Electrically induced strain development, lattice distortions, and twinning could have important contributions in the MIT triggering process and could drive the material into non-equilibrium states, providing an unconventional pathway to explore the phase space of strongly correlated electronic systems.

cond-mat.mtrl-sci

High-Resolution Full-field Structural Microscopy of the Voltage Induced Filament Formation in Neuromorphic Devices

Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for its complex electronic and structural phase transition as well as its filament formation under applied voltages. Local structural studies of the filament behavior are often limited due to time-consuming rastering which makes impractical many experiments aimed at investigating large spatial areas or temporal dynamics associated with the electrical triggering of the phase transition. Utilizing Dark Field X-ray Microscopy (DFXM), a novel full-field x-ray imaging technique, we study this complex filament formation process in-operando in VO2 devices from a structural perspective. We show that prior to filament formation, there is a significant gain of the metallic rutile phase beneath the metal electrodes that define the device. We observed that the filament formation follows a preferential path determined by the nucleation sites within the device. These nucleation sites are predisposed to the phase transition and can persistently maintain the high-temperature rutile phase even after returning to room temperature, which can enable a novel training/learning mechanism. Filament formation also appears to follow a preferential path determined by a nucleation site within the device which is predisposed to the rutile transition even after returning to room temperature. Finally, we found that small isolated low-temperature phase clusters can be present inside the high-temperature filaments indicating that the filament structure is not uniform. Our results provide a unique perspective on the electrically induced filament formation in metal-insulator transition materials, which further the basic understanding of this resistive switching.

physics.app-ph

Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition

Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing local switching, which provides an opportunity to tune the electronic and magnetic state of the device by applying voltage. Here we explore the magnetotransport properties in the ferromagnetic oxide (La,Sr)MnO3 (LSMO) during the electrical triggering of an intrinsic metal-insulator transition (MIT) that produces volatile resistive switching. This switching occurs in a characteristic spatial pattern, i.e., the formation of an insulating barrier perpendicular to the current flow, enabling an electrically actuated ferromagnetic-paramagnetic-ferromagnetic phase separation. At the threshold voltage of the MIT triggering, both anisotropic and colossal magnetoresistances exhibit anomalies including a large increase in magnitude and a sign flip. Computational analysis revealed that these anomalies originate from the coupling between the switching-induced phase separation state and the intrinsic magnetoresistance of LSMO. This work demonstrates that driving the MIT material into an out-of-equilibrium resistive switching state provides the means to electrically control of the magnetotransport phenomena.

cond-mat.mtrl-sci

Correlative mapping of local hysteresis properties in VO$_2$

We have developed a new optical microscopy technique able to track micron-sized surface clusters as temperature is varied. Potential candidates for study include phase separated metal-insulator materials, ferroelectrics, and porous structures. Several key techniques (including autofocus, step motor/cross correlation alignments, single-pixel thresholding, pair connectivity correlation length and image convolution) were implemented in order to obtain a time series of thresholded images. Here, we apply this new method to probe the archetypal phase separated insulator-metal transition in VO$_2$. A precise time and temperature series of the insulator-metal transition was achieved, allowing us to construct for the first time in this material spatial maps of the transition temperature T$_c$. These maps reveal multiple interesting features such as fractal electronic patterns on micron scales, regions of the sample with an extremely large or nearly absent local hysteresis, a positive correlation between the T$_c$ value and the hysteresis width $Δ$T$_c$, and high cycle-to-cycle reproducibility of the transition. These maps also allow for the identification of individual pixels with unique transition characteristics. This unprecedented knowledge of the local properties of each spot along with the behavior of the entire network paves the way to novel electronics applications enabled by, {\em e.g.}, addressing specific regions with desired memory and/or switching characteristics, as well as detailed explorations of open questions in the theory of hysteresis.

cond-mat.str-el

Tuning spin-orbit torques across the phase transition in VO$_2$/NiFe heterostructure

The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques in VO$_2$/NiFe heterostructures were investigated using spin-torque ferromagnetic resonance, where the VO$_2$ layer undergoes a prominent insulator-metal transition. A roughly two-fold increase in the Gilbert damping parameter, $α$, with temperature was attributed to the change in the VO$_2$/NiFe interface spin absorption across the VO$_2$ phase transition. More remarkably, a large modulation ($\pm$100%) and a sign change of the current-induced spin-orbit torque across the VO$_2$ phase transition suggest two competing spin-orbit torque generating mechanisms. The bulk spin Hall effect in metallic VO$_2$, corroborated by our first-principles calculation of spin Hall conductivity, $σ_{SH} \approx 10^4 \frac{\hbar}{e} Ω^{-1} m^{-1}$, is verified as the main source of the spin-orbit torque in the metallic phase. The self-induced/anomalous torque in NiFe, of the opposite sign and a similar magnitude to the bulk spin Hall effect in metallic VO$_2$, could be the other competing mechanism that dominates as temperature decreases. For applications, the strong tunability of the torque strength and direction opens a new route to tailor spin-orbit torques of materials which undergo phase transitions for new device functionalities.

cond-mat.mtrl-sci

Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers

We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromagnetic resonance measurements show that this change in magnetic anisotropy is reversible with temperature. We identify two structural properties of the V$_2$O$_3$/Ni bilayers affecting the in-plane magnetic anisotropy: (1) a growth-induced uniaxial magnetic anisotropy associated with step-like terraces in the bilayer microstructure and (2) a low-temperature strain-induced biaxial anisotropy associated with the V$_2$O$_3$ structural phase transition. Magnetoresistance measurements corroborate the change in magnetic anisotropy across the structural transition and suggest that the negative magnetostriction of Ni leads to the emergence of a strain-induced easy-axis. This shows that a temperature-dependent structural transition in V$_2$O$_3$ may be used to tune the magnetic anisotropy in an adjacent ferromagnetic thin film.

cond-mat.mtrl-sci

Voltage-controlled magnetism enabled by resistive switching

The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase transition producing a volatile resistive switching. This switching occurs in a characteristic spatial pattern: the formation of a transverse insulating barrier inside a metallic matrix resulting in an unusual ferromagnetic/paramagnetic/ferromagnetic configuration. We found that the formation of this voltage-driven paramagnetic insulating barrier is accompanied by the emergence of a strong uniaxial magnetic anisotropy that overpowers the intrinsic material anisotropy. Our results demonstrate that resistive switching is an effective tool for manipulating magnetic properties. Because resistive switching can be induced in a very broad range of materials, our findings could enable a new class of voltage-controlled magnetism systems.

cond-mat.mtrl-sci

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 devices at room temperature (120 K below the phase transition temperature) by applying an electric field. We use operando optical imaging to track a reflectivity change during the RS and find that a percolating high temperature metallic phase filament is formed. This demonstrates that the electrically induced RS triggers the phase transition. Furthermore, we optically capture the spiking oscillations that we link to the negative differential resistance regime and find the filament forms and dissolves via a periodic spatio-temporal instability that we describe by numerical simulations.

cond-mat.mtrl-sci

Resistive switching in reverse: voltage driven formation of a transverse insulating barrier

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting filaments parallel to the current flow, has been an active research topic. Here we present the discovery of an opposite, metal-to-insulator switching that proceeds via nucleation and growth of an insulating barrier perpendicular to the driving current. The barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. Electrically inducing a transverse barrier enables a novel approach to voltage-controlled magnetism. By triggering a metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism can be achieved by a global voltage bias applied to the whole device.

cond-mat.mtrl-sci

Non-Thermal Resistive Switching in Mott Insulators

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. We resolve this issue by studying nanowires of two archetypical Mott insulators - VO2 and V2O3. Our findings show a crossover between two qualitatively different regimes. In one, the IMT is driven by Joule heating to the transition temperature, while in the other, field-assisted carrier generation gives rise to a doping driven IMT which is purely non-thermal. By identifying the key material properties governing these phenomena, we propose a universal mechanism for resistive switching in Mott insulators. This understanding enabled us to control the switching mechanism using focused ion-beam irradiation, thereby facilitating an electrically driven non-thermal IMT. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state of the art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

cond-mat.str-el

A caloritronics-based Mott neuristor

Machine learning imitates the basic features of biological neural networks to efficiently perform tasks such as pattern recognition. This has been mostly achieved at a software level, and a strong effort is currently being made to mimic neurons and synapses with hardware components, an approach known as neuromorphic computing. CMOS-based circuits have been used for this purpose, but they are non-scalable, limiting the device density and motivating the search for neuromorphic materials. While recent advances in resistive switching have provided a path to emulate synapses at the 10 nm scale, a scalable neuron analogue is yet to be found. Here, we show how heat transfer can be utilized to mimic neuron functionalities in Mott nanodevices. We use the Joule heating created by current spikes to trigger the insulator-to-metal transition in a biased VO2 nanogap. We show that thermal dynamics allow the implementation of the basic neuron functionalities: activity, leaky integrate-and-fire, volatility and rate coding. By using local temperature as the internal variable, we avoid the need of external capacitors, which reduces neuristor size by several orders of magnitude. This approach could enable neuromorphic hardware to take full advantage of the rapid advances in memristive synapses, allowing for much denser and complex neural networks. More generally, we show that heat dissipation is not always an undesirable effect: it can perform computing tasks if properly engineered.

cs.ET