arXiv subjects

Pavlo Makushko

Publications and source records attributed to Pavlo Makushko.

7 recordsLinked to original sources

arXiv2026

Quantum metric quadrupoles in elemental bismuth thin films

The nonlinear transport properties of solids are deeply rooted in the quantum geometry of their electronic wavefunctions, which is encoded in the quantum geometric tensor. Its real part, known as the quantum metric, has been recently identified as a primary origin of nonlinear transport in quantum materials where time-reversal and inversion symmetries are not simultaneously present. Consequently, the influence of the quantum metric on the largest class of materials -- non-magnetic and centrosymmetric systems -- has remained entirely elusive. Here, we demonstrate that third-order transport in centrosymmetric materials hosting relativistic fermions is governed by quantum metric quadrupoles (QMQs). We show that these QMQs can originate from both the non-Abelian quantum geometry of bulk three-dimensional Dirac fermions and the Abelian quantum geometry of spin-orbit-coupled surface states. In stark contrast to all zero-field nonlinear transport signatures known to date, the current driven by these QMQs persists as a robust, non-vanishing observable even in highly scalable polycrystalline thin films. We experimentally validate this quantum metric footprint by measuring nonlinear transport in thin films of elemental bismuth, observing a robust, surface-dominated, and broadband third-harmonic generation that persists up to room temperature. Our findings uncover a hidden role of the quantum metric in polycrystalline systems, establishing third-order nonlinear transport as a high-precision diagnostic tool of wavefunction geometry under ambient conditions.

cond-mat.mes-hall↗

arXiv2026

Local multiferroic ordering at room temperature in collinear magnetoelectric antiferromagnets induced by flexo-Zeeman coupling

Spin-driven multiferroicity attracts significant interest due to its tunability and inherently strong magnetoelectric coupling. While this mechanism induces sizeable electric polarization, it typically occurs at low temperatures and in complex materials. In the simple oxide, the magnetoelectric antiferromagnet Cr$_2$O$_3$, we experimentally demonstrate the existence of specific domain walls that act as room-temperature multiferroic regions. This behavior stems from an anisotropic crystal-symmetry-dependent mechanism of exchange origin, which is applicable to a broad class of bipartite antiferromagnets. The key signature is the magnetization occurring at antiferromagnetic textures, driven by the flexo-Zeeman interaction. These findings establish a foundation for exploring high-temperature spin-driven multiferroicity for magnetoelectric spin-orbit memory and logic applications.

cond-mat.mtrl-sci↗

arXiv2026

Piezomagnetic Switching of Nonvolatile Antiferromagnetic States

Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of antiferromagnetic states remains a key challenge [2, 3]. Here, we propose a piezomagnetic writing scheme in triangular Mn3Ir-based memory cells, with readout achieved via the exchange bias effect. Our approach enables deterministic and nonvolatile switching of the antiferromagnetic states, which exhibit exceptional robustness against external perturbations. The switching mechanism is ascribed to piezomagnetic effect of Mn3Ir combined with the interfacial Dzyaloshinskii-Moriya interaction at the antiferromagnet-ferromagnet interface. This scheme overcomes the speed limitations imposed by conventional isothermal methods based on isothermal crystallization mechanism [4]. Our findings highlight the potential of piezomagnetic effects in designing advanced spintronic devices, providing an efficient pathway for manipulating antiferromagnetic states and developing energy-efficient memory technology.

cond-mat.mtrl-sci↗

arXiv2024

Antiferromagnetic nanoscale bit arrays of magnetoelectric Cr$_2$O$_3$ thin films

Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100-nm-thick magnetoelectric Cr$_2$O$_3$ films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the domain structure evolves from a multidomain state for larger bits to a single domain state for the smallest bits. Based on spin-lattice simulations, we show that the physics of the domain pattern formation in granular AFM bits is primarily determined by the energy dissipation upon cooling, which results in motion and expelling of AFM domain walls of the bit. Our results provide a way towards the fabrication of single domain AFM-bit-patterned memory devices and the exploration of the interplay between AFM nanostructures and their geometric shape.

cond-mat.mtrl-sci↗

arXiv2023

Spin-orbit interaction driven terahertz nonlinear dynamics in transition metals

The interplay of electric charge, spin, and orbital polarizations, coherently driven by picosecond long oscillations of light fields in spin-orbit coupled systems, is the foundation of emerging terahertz spintronics and orbitronics. The essential rules for how terahertz light interacts with these systems in a nonlinear way are still not understood. In this work, we demonstrate a universally applicable electronic nonlinearity originating from spin-orbit interactions in conducting materials, wherein the interplay of light-induced spin and orbital textures manifests. We utilized terahertz harmonic generation spectroscopy to investigate the nonlinear dynamics over picosecond timescales in various transition metal films. We found that the terahertz harmonic generation efficiency scales with the spin Hall conductivity in the studied films, while the phase takes two possible values (shifted by π), depending on the d-shell filling. These findings elucidate the fundamental mechanisms governing non-equilibrium spin and orbital polarization dynamics at terahertz frequencies, which is relevant for potential applications of terahertz spin- and orbital-based devices.

physics.app-ph↗

arXiv2023

Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films

The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling and occurs in non-centrosymmetric crystals with large Berry curvature -- an emergent magnetic field encoding the geometric properties of electronic wavefunctions. The design of (opto)electronic devices based on the NLHE is however hindered by the fact that this nonlinear effect typically appears at low temperatures and in complex compounds characterized by Dirac or Weyl electrons. Here, we show a strong room temperature NLHE in the centrosymmetric elemental material bismuth synthesized in the form of technologically relevant polycrystalline thin films. The ($1\,1\,1$) surface electrons of this material are equipped with a Berry curvature triple that activates side jumps and skew scatterings generating nonlinear transverse currents. We also report a boost of the zero field nonlinear transverse voltage in arc-shaped bismuth stripes due to an extrinsic geometric classical counterpart of the NLHE. This electrical frequency doubling in curved geometries is then extended to optical second harmonic generation in the terahertz (THz) spectral range. The strong nonlinear electrodynamical responses of the surface states are further demonstrated by a concomitant highly efficient THz third harmonic generation which we achieve in a broad range of frequencies in Bi and Bi-based heterostructures. Combined with the possibility of growth on CMOS-compatible and mechanically flexible substrates, these results highlight the potential of Bi thin films for THz (opto)electronic applications.

cond-mat.mes-hall↗

arXiv2023

Surface-symmetry-driven Dzyaloshinskii--Moriya interaction and canted ferrimagnetism in collinear magnetoelectric antiferromagnet Cr$_2$O$_3$

Antiferromagnets are normally thought of as materials with compensated magnetic sublattices. This adds to their technological advantages but complicates readout of the antiferromagnetic state. We demonstrate theoretically the existence of a Dzyaloshinskii-Moriya interaction (DMI) which is determined by the magnetic symmetry classes of Cr$_2$O$_3$ surfaces with an in-plane magnetic easy axis. The DMI explains a previously predicted out-of-plane magnetization at the nominally compensated surfaces of chromia, leading to a surface-localized canted ferrimagnetism. This is in agreement with magnetotransport measurements and with density functional theory predictions which further allow us to quantify the strength of DMI. The temperature dependence of the transversal resistance for these planes shows distinct behavior in comparison with that of the Cr$_2$O$_3$ $c$ plane, which we attribute to the influence of DMI. Our work provides a framework to analyze surface-driven phenomena in antiferromagnets, and motivates the use of nominally compensated chromia surfaces for antiferomagnetic spintronics and magnonics.

cond-mat.str-el↗