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Pavol Šutta

Publications and source records attributed to Pavol Šutta.

2 recordsLinked to original sources

Artical Functionalization of structural and electronic properties of multiferroic SrTiO3 thin films

This study examines the application of transition metal-doped SrTiO3 in photovoltaic technologies, such as photocatalysis. The core objective is to evaluate how different dopants influence the structural and electronic characteristics of the well-known perovskite, SrTiO3 (STO). By incorporating dopants, particularly transition metals, the material's physical properties can be enhanced by addressing limitations such as the large gap in the valence band. This study aims to determine the impact of these metals on factors like crystallite size, internal stress levels, electron-hole pair distribution in the valence band, and the shift in the electromagnetic spectrum toward the visible range. The primary focus is on assessing nickel's (Ni) influence on these properties, with additional investigation into the effects of yttrium (Y) and iron (Fe). Several experimental methods were employed to analyze the structural and electronic properties of SrTiO3. The same procedures were applied consistently across all samples, with the sole exception being the high-temperature XRD experiments, as described in the text. The techniques used include magnetron pulse deposition for sample preparation, followed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). After conducting the experiments, the collected data were evaluated and used to guide subsequent steps. Finally, all data were consolidated and analyzed comprehensively.

cond-mat.mtrl-sci↗

A topological material in the III-V family: heteroepitaxial InBi on InAs

InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hopping terms, and no Bi-In interaction, gives a deeper insight into the spin texture.

cond-mat.str-el↗