Pawan Kumar Srivastava

arXiv2026

Contrasting anisotropic electron-phonon-spin coupling in Fe$_{3}$GeTe$_{2}$ and Fe$_{5}$GeTe$_{2}$: A helicity-resolved Raman study

Two-dimensional van der Waals ferromagnets Fe$_3$GeTe$ _2$ (F3GT) and Fe$_5$GeTe$_2$ (F5GT) exhibit pronounced magneto-optical responses, which open promising platforms for investigating the interplay among lattice, electronic, and magnetic degrees of freedom. Here, we present a comparative study of optical resonance-induced anisotropic electron-phonon coupling and its association with magnetic ordering in these systems using wavelength- and temperature-dependent helicity-resolved Raman spectroscopy. By resolving the doubly degenerate E modes under left- and right-circularly polarized excitations, we demonstrate that the temperature evolution of the chiral mode splitting ($Δf$) does not track the magnetization behavior, indicating that the helicity-dependent Raman response arises not solely from time-reversal symmetry breaking due to magnetic order, but also from spin-orbit-coupled electronic interactions. Notably, in F3GT, the out-of-plane magnetization indirectly governs the in-plane anisotropic electron-phonon coupling under optical resonance, whereas F5GT exhibits static anisotropic interactions. The Fano asymmetry parameter $1/q$ reveals mode- and temperature-dependent coupling strengths between phonons and the electronic continuum, with pronounced angular anisotropy in F3GT but isotropic behavior in F5GT--- a consequence of its multiple Fe sites and enhanced interlayer hybridization in the latter. Our results demonstrate the role of crystal structure and magnetic anisotropy in shaping the anisotropically coupled electron-phonon-spin dynamics in these layered metallic ferromagnets, and highlight Fe$_x$GeTe$_2$ as a versatile platform for microscopic insight into chiral light-matter interactions in layered metallic ferromagnets.

cond-mat.str-el↗

arXiv2025

Graphene Straintronics by Molecular Trapping

Here, we report on controlling strain in graphene by trapping molecules at the graphene-substrate interface, leveraging molecular dipole moments. Spectroscopic and transport measurements show that strain correlates with the dipole moments of trapped molecules, with a dipole range of 1.5 D to 4.9 D resulting in a 50-fold increase in strain and a substantial rise in the residual carrier density. This has been possible by charge transfer between graphene and trapped molecules, altering the C=C bond length, and causing biaxial strain. First-principles density functional theory calculations confirm a consistent dependence of bending height on molecular dipole moments.

cond-mat.mes-hall↗

arXiv2017

Relativistic nature of carriers: Origin of electron-hole conduction asymmetry in m o n o l a ye r gr a p h e n e

We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic contacts have negligible impact on asymmetric conduction and may be either sample or device-dependent phenomena. Electrical measurements show that monolayer graphene based devices exhibit suppressed electron conduction compared to hole conduction due to the presence of donor impurities which scatter electrons more efficiently. This can be explained by the relativistic nature of charge carriers in a graphene monolayer and can be reconciled with the fact that in a relativistic quantum system transport cross section does depend on the sign of scattering potential in contrast to a nonrelativistic quantum system.

cond-mat.mes-hall↗