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Paweł J. Kowalczyk

Publications and source records attributed to Paweł J. Kowalczyk.

6 recordsLinked to original sources

Thickness-dependent degradation and optical access in epitaxial 2H-MoTe2 protected by metallic capping layers

We investigate degradation and surface protection of epitaxial 2H-MoTe2 films grown by molecular beam epitaxy on GaAs(111)B substrates. Using X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy, atomic force microscopy (AFM), Kelvin probe microscopy (KPM), Raman spectroscopy, and density functional theory (DFT), we examine the structural, chemical, and electronic evolution of MoTe2 protected by Co and Ni capping layers. XPS shows that the metallic caps effectively suppress oxidation during short-term air transfer, while revealing a pronounced Te-rich near-surface composition. With time, the caps become increasingly difficult to remove, suggesting gradual interfacial bonding promoted by excess tellurium and defect-rich MoTe2 interfaces. AFM and KPM reveal pronounced thickness-dependent ageing, with ultrathin regions showing markedly different contact-potential evolution from thicker films. DFT calculations support the sensitivity of work function and density of states to thickness and surface chemistry. Raman measurements through approximately 20 nm thick metallic caps demonstrate partial optical access to the protected material. Additional AFM and Raman observations suggest local formation of Te-rich nanostructures under laser illumination or near mechanically damaged regions. These results provide practical guidelines for protecting, transferring, delaminating, and optically characterizing air-sensitive MoTe2 and related van der Waals materials.

cond-mat.mtrl-sci↗

Moiré plane wave expansion model for scanning tunneling microscopy simulations of incommensurate two-dimensional materials

Incommensurate heterostructures of two-dimensional (2D) materials, despite their attractive electronic behaviour, are challenging to simulate because of the absence of translation symmetry. Experimental investigations of these structures often employ scanning tunneling microscopy (STM), however there is to date no comprehensive theory to simulate an STM image in such systems. In this paper, we present a geometry-based method to generate STM images in incommensurate van der Waals (vdW) heterostructures, which we call the moiré plane wave expansion model (MPWEM). We generate the STM images using a weighted sum of three image terms: the non-interacting STM images of (1) the substrate layer, (2) the adsorbate layer, and (3) a semi-empirical Fourier expansion of the moiré wavevectors obtained analytically which results from the interaction of (1) and (2). We illustrate and benchmark the model using selected vdW 2D systems composed of structurally and electronically distinct crystals, and show that the method reproduces experimental STM images down to angstrom-scale details. The MPWEM, thanks to its simplicity, can serve as an initial prediction tool prior to more computationally expensive calculations which are often limited by the number of atoms and the requirement of periodic supercells, and thus offers a promising class of computationally-friendly STM simulations, of high relevance in the growing field of twistronics.

cond-mat.mes-hall↗

Evidence of directional structural superlubricity and Lévy flights in a van der Waals heterostructure

Structural superlubricity is a special frictionless contact in which two crystals are in incommensurate arrangement such that relative in-plane translation is associated with vanishing energy barrier crossing. So far, it has been realized in multilayer graphene and other van der Waals two-dimensional crystals with hexagonal or triangular crystalline symmetries, leading to isotropic frictionless contacts. Directional structural superlubricity, to date unrealized in two-dimensional systems, is possible when the reciprocal lattices of the two crystals coincide in one direction only. Here, we evidence directional structural superlubricity a $α$-bismuthene/graphite van der Waals system, manifested by spontaneous hopping of the islands over hundreds of nanometres at room temperature, resolved by low-energy electron microscopy and supported by registry simulations. Statistical analysis of individual and collective $α$-bismuthene islands populations reveal a heavy-tailed distribution of the hopping lengths and sticking times indicative of L{é}vy flight dynamics, largely unobserved in condensed-matter systems.

cond-mat.mes-hall↗

Robust Zeeman-type band splitting in sliding ferroelectrics

Transition metal dichalcogenides exhibit giant spin-orbit coupling, and intriguing spin-valley effects, which can be harnessed through proximity in van der Waals (vdW) heterostructures. Remarkably, due to the prismatic crystal field, the Zeeman-type band splitting of valence bands reach values of several hundreds of meV. While this effect is suppressed in the commonly studied hexagonal (H)-stacked bilayers due to the presence of inversion symmetry, the recent discovery of sliding ferroelectricity in rhombohedral (R-)stacked MX$_2$ bilayers (M=Mo, W; X=S, Se) suggests that the Zeeman effect could be present in these non-centrosymmetric configurations, making it even more intriguing to investigate how the spin-resolved bands would evolve during the phase transition. Here, we perform density functional theory calculations complemented by symmetry analysis to unveil the evolution of ferroelectricity during sliding and the behavior of Zeeman splitting along the transition path. While the evolution of the out-of-plane component of the electric polarization vector resembles the conventional ferroelectric transition, we observe significant in-plane components parallel to the sliding direction, reaching their maximum at the intermediate state. Moreover, we demonstrate that the R-stacked bilayers exhibit persistent Zeeman-type band splitting throughout the transition path, allowed by the lack of inversion symmetry. Further analysis of different stacking configurations generated by sliding along various directions confirms that the Zeeman effect in MX$_2$, primarily arising from the polarity of prismatic ligand coordination of the metal atom, is remarkably robust and completely governs the spin polarization of bands, independently of the sliding direction. This resilience promises robust spin transport in vdW based MX$_2$ bilayers, opening new opportunities for ferroelectric spintronics.

cond-mat.mtrl-sci↗

Graphene on quartz modified with rhenium oxide as a semitransparent electrode for organic electronic

Our research shows that commercially available graphene on quartz modified with rhenium oxide meets the requirements for its use as a conductive and transparent anode in optoelectronic devices. The cluster growth of rhenium oxide enables an increase in the work function of graphene by 1.3 eV up to 5.2 eV, which guarantees an appropriate adjustment to the energy levels of the organic semiconductors used in OLED devices.

physics.app-ph↗

Pseudomagnetic fields and strain engineering: graphene on GaN nanowires

Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A detailed analysis of the strain distribution shows positive correlation between strain gradient and distances between borders of supporting regions. These results are confirmed by Raman spectroscopy by analysis the D' band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by a modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters.

cond-mat.mes-hall↗