arXiv subjects

Paweł Mrowiński

Publications and source records attributed to Paweł Mrowiński.

13 recordsLinked to original sources

arXiv2026

Two-photon interference from as-grown InAsP/InP quantum dots under detuned excitation

In this study, we investigate as-grown InAsP/InP quantum dots emitting in the third telecommunication window under detuned quasi-resonant excitation. A large excitation-emission detuning of 32 meV enables efficient suppression of scattered laser light while retaining several advantages of near-resonant excitation. The single-photon nature of the emission is confirmed by a Hanbury Brown and Twiss experiment, yielding a raw second-order autocorrelation value of $g_{\mathrm{raw}}^{(2)}(0)=0.076(6)$. Hong-Ou-Mandel measurement is used to determine the degree of indistinguishability of single photons and reveal as measured visibilities of $V=0.094(4)$ and $V=0.106(5)$ for excitation pulse separations of 13.1 ns and 5.3 ns, respectively. These results demonstrate the potential of as-grown InAsP/InP quantum dots grown via molecular beam epitaxy under not experimentally demanding detuned excitation for generating indistinguishable telecom single photons. Further improvements are to be achieved through Purcell enhancement in optical cavities.

quant-ph↗

arXiv2025

Efficient passivation of III-As(P) photonic interfaces

Surface effects can significantly impact the performance of nanophotonic and quantum photonic devices, especially as the device dimensions are reduced. In this work, we propose and investigate a novel approach to surface passivation to mitigate these challenges in photonic nanostructures with III-As(P) quantum wells defined by a dry etching process. The nanostructures are annealed under the phosphine (PH$_3$) ambient inside a metal-organic vapor phase epitaxy chamber to eliminate surface and subsurface defects induced during the dry etching and subsequent oxidation of the etched sidewalls. Moreover, encapsulation of the active material with a wider bandgap material allows for maintaining the band structure of the device, mitigating band bending effects. Our findings reveal an almost order of magnitude reduction in the surface recombination velocity from $2 \times 10^3 \, \mathrm{cm/s}$ for the PH$_3$ annealing compared to $1.5 \times 10^4 \, \mathrm{cm/s}$ for the non-passivated structures and $5 \times 10^3 \, \mathrm{cm/s}$ for the standard method based on (NH$_4$)$_2$S wet treatment followed by Al$_2$O$_3$ encapsulation. A further reduction to $5 \times 10^2 \, \mathrm{cm/s}$ is achieved for the InP-regrown samples. Additionally, we develop a model accounting for the impact of surface charges in the analysis of time-resolved photoluminescence curves and demonstrate that the proposed passivation method effectively reduces the surface charge density on the sidewalls of the studied quantum well-based photonic nanostructures.

physics.optics↗

arXiv2024

InAs/InP quantum dot based C-Band all-fiber plug-and-play triggered single-photon source integrated using micro-transfer printing

Fiber-based long-haul quantum communication would greatly benefit from a robust and deterministically integrated source of quantum state. Here, we report the design, fabrication, and optical characterization of InAs/InP quantum dots in the InP H1 point defect 2D photonic crystal cavity, integrated with the standard single-mode fiber using a micro-transfer printing technique. The device was placed in a compact cryocooler maintaining a cryogenic temperature of 15 K with single-photon emission characterized by $g^{(2)}(0)=0.14(14)$ and reliable and stable emission (intensity fluctuations given by a standard deviation $σ= 0.13$), so that an all-fiber based connection between two laboratory nodes through an open area was established and utilized for testing the quantum channel. In this way, we demonstrate a plug-and-play all-fiber single-photon source operating in the third telecom window, where standard telecommunication fiber networks can be used as a low-loss medium.

physics.optics↗

arXiv2024

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon leakage while directing photons into the collecting lens aperture. Here, we present an alternative approach to employ Xenon plasma-focused ion beam (Xe-PFIB) technology as a reliable method for the 3D shaping of photonic nanostructures containing low-density self-assembled InAs/InP quantum dots emitting in the C-band range of the 3rd telecommunication window. We explore both deterministic and non-deterministic fabrication approaches, resulting in mesas naturally shaped as truncated cones. As a demonstration, we fabricate mesas using a heterogeneously integrated structure with a QDs membrane atop an aluminum mirror and silicon substrate. Finite-difference time-domain (FDTD) simulations show that the angled sidewalls significantly increase photon extraction efficiency, achieving η = 0.89 for NA = 0.65. We demonstrate experimentally a high purity of pulsed single-photon emission (~99%) and a high extraction efficiency of η = 0.24, with the latter surpassing the highest reported values obtained using electron beam lithography in the C-band.

physics.optics↗

arXiv2024

High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band

Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.

quant-ph↗

arXiv2023

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding

Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $μ$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.

physics.optics↗

arXiv2023

Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy

Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled inter-dot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modelling on different levels of complexity we give an instructive explanation of the underlying coupling mechanism and dynamical processes.

cond-mat.mes-hall↗

arXiv2021

Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si

Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting photons in the telecom bands ($1460-1625$ nm) allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of $\sim10\%$. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of a single-photon generation with purity $\mathcal{P}>98\%$ at the liquid helium temperature and $\mathcal{P}=75\%$ at $80$ K.

cond-mat.mes-hall↗

arXiv2020

Directional single-photon emission from deterministic quantum dot waveguide structures

Chiral light-matter interaction can lead to directional emission of two-level light emitters in waveguides. This interesting physics effect has raised considerable attention in recent years especially in terms of on-chip quantum systems. In this context, our work focuses on tailoring single semiconductor quantum dot-waveguide (QD-WG) systems to emit single photons with high directionality. We use low-temperature in-situ electron-beam lithography enabled by cathodoluminescence mapping to select suitable QDs and to integrate them deterministically into linear waveguide structures at specific chiral points determined by numerical calculations. We observe excitonic and biexcitonic emission from the fabricated QD-WG structure in a confocal microPL setup enabling the optical characterization in terms of directional emission of circularly polarized photons emitted by integrated QDs. Our results show a high degree of anisotropy on the level of 54% for directional QD emission and antibunching in autocorrelation experiment confirming the fabricated QD-WG system, which is a prerequisite for using this effect in advanced applications in integrated quantum circuits.

cond-mat.mes-hall↗

arXiv2019

Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths

Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the configuration interaction method. The origin of excitonic complexes has been exemplarily confirmed based on magnetooptical and correlation spectroscopy study. Understanding the influence of structural parameters and compositions (of QDs themselves as well as in the neighbouring strain reducing layer) allows to distinguish which of them are crucial to control the emission wavelength to achieve the telecommunication spectral range or to affect binding energies of the fundamental excitonic complexes. The obtained results provide deeper knowledge on control and on limitations of the investigated structures in terms of good spectral isolation of individual optical transitions and the spatial confinement that are crucial in view of QD applications in single-photon sources of high purity at telecom wavelengths.

cond-mat.mes-hall↗

arXiv2019

Modelling the enhancement of spectrally broadband extraction efficiency of emission from single InAs/InP quantum dots at telecommunication wavelengths

Hereby, we present results of finite-difference time-domain simulations of technologically undemanding photonic structures offering a significant improvement in the spectrally broad extraction efficiency of emission from a quantum emitter at the third telecommunication window. The modelling is performed for cylindrical and cuboidal mesa structures containing an exciton confined in a single InAs/InP quantum dot. We investigate the emission pattern from such mesas made of InP (which can be exchanged with AlGaInAs lattice-matched to InP) for two cases: monolithic InP material or InP/AlGaInAs distributed Bragg reflector (DBR) underneath the mesa. The calculations are performed as a function of geometrical parameters, i.e. mesa shape and dimensions, and the emitter position. For the case with the DBR, we obtain extraction efficiencies above 25% (for a numerical aperture of 0.4 of a common optical detection system), which also exhibits weak spectral dependence - values above 20% can be obtained in the range of 60 nm around 1550 nm. When the numerical aperture is increased to 0.9, extraction efficiencies about 45% are reachable within the proposed solution. The extraction efficiency is rather weakly sensitive to the in-plane dipole alignment (in the range of 100-200 nm), however, it is more susceptible to even slight changes in its vertical position or to mesa sizes. Eventually, we also comment on the Purcell effect in such weak photonic confinement structures, influence of which on the source brightness is not negligible in some cases.

cond-mat.mes-hall↗

arXiv2019

Directional emission of a deterministically fabricated quantum dot - Bragg reflection multi-mode waveguide system

We report on the experimental study and numerical analysis of chiral light-matter coupling in deterministically fabricated quantum dot (QD) waveguide structures. We apply in-situ electron beam lithography to deterministically integrate single InGaAs/GaAs QDs into GaAs-DBR waveguides to systematically explore the dependence of chiral coupling on the position of the QD inside the waveguide. By a series of micro-photoluminescence measurements, we determine the directionality contrast of emission into left and right traveling waveguide modes revealing a maximum of 0.93 for highly off-center QDs and an oscillatory dependence of this contrast on the QD position. In numerical simulations we obtain insight into chiral light-matter coupling by computing the light field emitted by a circularly polarized source and its overlap with multiple guided modes of the structure, which enables us to calculate directional $β$-factors for the quantum emitters. The calculated dependence of the directionality on the off-center QD position is in good agreement with the experimental data. It confirms the control of chiral effects in deterministically fabricated QD-waveguide systems with high potential for future non-reciprocal on-chip systems required for quantum information processing.

cond-mat.mes-hall↗

arXiv2018

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10${\pm}$2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations.

cond-mat.mes-hall↗