arXiv subjects

Paweł Wyborski

Publications and source records attributed to Paweł Wyborski.

15 recordsLinked to original sources

arXiv2026

Toward triggered generation of indistinguishable single-photons from MoTe$_2$ quantum emitters

Single-photon sources operating at telecom wavelengths are fundamental components for long-distance optical quantum communication and information processing. Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer a promising platform for such sources, but their development has been hindered by limited spectral range and poor single-photon indistinguishability. Here, we demonstrate a reproducible and systematic approach for generating near-infrared (1090-1200 nm) quantum emitters in bilayer MoTe$_2$ using deterministic strain and defect engineering. These emitters exhibit strong linear polarization (DOLP $>70%$), sub-nanosecond lifetimes ($τ\sim$ 130-450 ps), high single-photon purity with triggered $g^{(2)}(0)$ values as low as $\sim$0.01 ($\sim$0.16) under p-shell (quasi-resonant) excitation, and resolution-limited emission ($\sim$150 $μ$eV). Electrostatic biasing enables tuning over a $\sim$3 meV range, suppresses photon bunching, and significantly shortens radiative lifetimes, yielding narrow emission with ratios of experimental to transform-limited linewidths as low as $R\sim55$. Most notably, two-photon interference measurements reveal a Hong-Ou-Mandel visibility of $V_{HOM}\sim$ 7.1$%$ (3.6$%$), and up to $V_{HOM}\sim$ 60$%$ ($\sim$40$%$) with post-selection by temporal filtering under p-shell (quasi-resonant) excitation. To our knowledge, this presents the highest reported indistinguishability for TMD quantum emitters and the first such demonstration for MoTe$_2$ platform. These results establish MoTe$_2$ as a viable platform for tunable, low-noise, high-purity single-photon sources with state-of-the-art indistinguishability for TMD quantum emitters, paving the way for their integration into telecom-compatible quantum photonic technologies.

physics.optics↗

arXiv2026

Integrated on-chip quantum light sources on a van der Waals platform

Scalable photonic quantum information technologies require a platform combining quantum light sources, waveguides, and detectors on a single chip. Here, we introduce a van der Waals platform comprising strain-engineered bilayer WSe$_2$ quantum emitters, integrated on multimode WS$_2$ waveguides with grating couplers, enabling efficient on-chip quantum light sources. The emitters exhibit bright, highly polarised emission that couples efficiently into WS$_2$ waveguides. Under discrete-state excitation, we observe high-purity, waveguide-coupled single-photon emission, measured using both single-port and cross-correlated, multi-port photon streams, yielding $g^{(2)}(0) = 0.003^{+0.030}_{-0.003}$ and $g^{(2)}(0) = 0.076\pm0.023$, respectively. For a single output, the out-coupled single-photon count rate at the first lens reaches approximately 357 kHz under continuous-wave discrete-state excitation, corresponding to an estimated minimum waveguide-coupled rate of 1.68 MHz. These results demonstrate an efficient, integrated single-photon source and establish a pathway toward scalable photonic quantum information processing centred around nanoengineered van der Waals materials.

physics.optics↗

arXiv2026

Telecom-band site-controlled quantum dots with engineered low fine-structure splitting

Deterministic quantum light sources emitting at telecom wavelengths with vanishing fine-structure splitting (FSS) are essential components for scalable quantum communication. While self-assembled Stranski-Krastanov (SK) quantum dots (QDs) are high-quality emitters, their random positioning and shape-induced anisotropy typically limit their use in entangled-photon applications. In this work, we demonstrate site-controlled SK growth where InAs/InP QDs nucleate at the symmetric apexes of truncated InP nanopyramids. Confining adatom diffusion to a small, symmetric nucleation area suppresses anisotropic growth, promoting the nucleation of highly symmetric QDs with FSS reduced to values below our statistically validated resolution limit of $9.2~μ$eV. At the same time, lithographically defined nucleation sites enable deterministic control of the QD position, overcoming the limitations of conventional SK growth. The high structural quality of single symmetric QDs is evidenced by the single-photon character of the emission ($g^{(2)}(0)=0.07^{+0.27}_{-0.07}$) spanning the S, C, and L telecom bands, with no evidence of lithography-induced defects affecting emission dynamics. These results demonstrate that tailoring QD symmetry through nanopyramid growth engineering provides a route toward site-controlled emitters suitable for entangled photon generation and integrated quantum photonics devices.

cond-mat.mes-hall↗

arXiv2026

Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band

Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In$_{0.7}$Ga$_{0.3}$As/In$_{0.7}$Al$_{0.3}$As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In$_{0.7}$Al$_{0.3}$As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C$_{3v}$ symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of $\approx$ 1.3--1.9 ns and linewidths as low as $\approx$ 300 $μ$eV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a $g^{(2)}(0)$ value of $0.141 \pm 0.027$

quant-ph↗

arXiv2026

Local droplet etching-assisted quantum dot epitaxy for telecom C-band quantum light emitters

Significant progress in quantum light sources for quantum communication applications requires reproducible and symmetric quantum emitters acting as single-photon sources capable of generating entangled photons on demand at specific telecom wavelengths. Here, we propose telecom-emitting epitaxial quantum dots (QDs) fabricated using the local droplet etching (LDE) approach. The resulting well-defined, low-density ($10^9$/cm$^2$) QDs based on In$_{x}$Ga$_{1-x}$As are formed in symmetric LDE nanoholes (in-plane aspect ratio of 1.14) in In$_{0.52}$Al$_{0.48}$As. Detailed transmission electron microscopy provides comprehensive insight into the structural integrity, interface quality, and compositional profiles of the QDs, which underpin their promising optical properties. Photoluminescence spectroscopy reveals narrow emission lines (0.2 meV) and high optical quality, while second-order autocorrelation measurements confirm clear single-photon emission, with $g^{(2)}(0)=0.07\pm0.02$ under above-band continuous-wave excitation and $g^{(2)}(0)=0.16 \pm 0.18$ under pulsed excitation. Precise numerical modeling, combining multiband $\boldsymbol{k} \cdot \boldsymbol{p}$ and configuration-interaction methods, supports the optical characterization and identifies thermal excitation pathways that explain the persistence of emission up to liquid-nitrogen temperatures. These results highlight the versatility of the LDE approach for integrating new material systems and pave the way toward scalable fabrication of quantum light sources with tailored emission properties.

physics.optics↗

arXiv2026

A Fiber-pigtailed Quantum Dot Device Generating Indistinguishable Photons at GHz Clock-rates

Solid-state quantum light sources based on semiconductor quantum dots (QDs) are increasingly employed in photonic quantum information applications. Especially when moving towards real-world scenarios outside shielded lab environments, the efficient and robust coupling of nanophotonic devices to single-mode optical fibers offers substantial advantage by enabling "plug-and-play" operation. In this work we present a fiber-pigtailed cavity-enhanced source of flying qubits emitting single indistinguishable photons at clock-rates exceeding $1\,$GHz. This is achieved by employing a fully deterministic technique for fiber-pigtailing optimized QD-devices based on hybrid circular Bragg grating (hCBG) micro-cavities. The fabricated fiber-pigtailed hCBGs feature radiative emission lifetimes of $<80\,$ps, corresponding to a Purcell factor of $\sim$9, a suppression of multi-photon emission events with $g^{(2)}(0)<1\%$, a photon-indistinguishability $>80\%$ and a measured single-photon coupling efficiency of 53$\%$ in a high numerical aperture single-mode fiber, corresponding to 1.2 Megaclicks per second at the single-photon detectors under $80\,$MHz excitation clock-rates. Furthermore, we show that high multi-photon suppression and indistinguishability prevail for excitation clock-rates exceeding $1\,$GHz. Our results show that Purcell-enhanced fiber-pigtailed quantum light sources based on hCBG cavities are a prime candidate for applications of quantum information science.

quant-ph↗

arXiv2025

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Hereby, we study the generation of pairs of polarization-entangled photons at telecom C-band by biexciton-exciton cascade from non-resonantly excited epitaxial InAs/InP quantum dots (QDs). It is realized without external tuning of the fine structure splitting (FSS), which does not exceed 10 $μ$eV in as-grown nanostructures, due to their high in-plane symmetry. Excitonic complexes are identified by means of excitation power-dependent and polarization-resolved magneto)microphotoluminescence. Their origin from different carrier configurations confined in the same QD is confirmed by time correlations of emitted photons. Experimental results are supported by 8-band kp calculations, followed by the configuration interaction method to include excitonic effects. This comparison reveals the structure of higher energy states, allowing for the reconstruction of the QD structural parameters. To verify and quantify the entanglement, we perform quantum state tomography and reconstruct the two-photon density matrix. Its diagonalization allows a detailed analysis of the entangled state and reveals an unfavourable interplay between phase accumulation and decoherence, pointing to a clear route for boosting entanglement by using a XX resonant, pulsed excitation scheme and shortening the radiative lifetimes.

quant-ph↗

arXiv2025

Monolithic Integration of Sub-50 nm III-V Nano-Heterostructures on Si (001) for Telecom Photonics

The demand for advanced photonics technology is increasing rapidly, fueled by the necessity for high-performance and cost-effective optical information processing systems extending into the quantum domain. Silicon, benefiting from its mature fabrication processes, stands as an ideal platform. However, its inherent indirect bandgap leads to inefficient light emission. The integration of III-V materials has been proven essential to overcome this drawback. These materials are recognized for their efficient light emission and superior bandgap engineering capabilities, making them indispensable in photonics and beyond. Here, we present the monolithic integration of small-volume III-V nanoheterostructures with silicon via selective area epitaxy in the pyramidal openings etched in (100)-oriented silicon substrate. The precise positioning of the nano-heterostructures is achieved using electron beam lithography. Our atomic resolution imaging and chemical analysis confirms the epitaxial nature of InP growth, revealing well-defined heterointerfaces. Each structure incorporates an InAsP quantum dot-like active medium, and the correlation of the growth parameters with the nanoscale structure was analyzed using advanced electron microscopy. The eight-band k.p calculations demonstrate energy level quantization in three spatial dimensions. Optical characterization shows that heterostructure emission can be engineered to cover the entire telecom wavelength range. Consequently, these InAsP/InP nano-heterostructures could serve as a gain medium for silicon-based hybrid nano-lasers and nano-LEDs and quantum light sources in the telecom wavelength range.

physics.optics↗

arXiv2025

Toward single-photon detection with superconducting niobium diselenide nanowires

We present superconducting nanowire single-photon detectors (SNSPDs) based on few-layer NbSe$_2$ fully encapsulated with hexagonal boron nitride (hBN), demonstrating single-photon sensitivity. Our fabrication process preserves the superconducting properties of NbSe$_2$ in nanowires, as confirmed by low-temperature transport measurements that show a critical temperature of $T_c \approx 6.5$ K, comparable to the reported values for unpatterned sheets, and it maintains a contact resistance of $\sim 50 \, Ω$ at $T = 4$ K. Meandered NbSe$_2$ nanowires exhibit a responsivity of up to $4.9 \times 10^4$ V/W over a spectral range of 650-1550 nm in a closed-cycle cryostat at 4 K, outperforming planar and short-wire devices. The devices achieve a $1/e$ recovery time of $τ= (135 \pm 36)$ ns, system timing jitter of $j_\text{sys} = (1103 \pm 7)$ ps, and detection efficiency of $\sim 0.01\%$ at $0.95I_c$, with a linear increase in detection probability confirming the single-photon operation. Furthermore, measurements under attenuated pulsed laser (1 MHz) indicate a success rate of up to $33\%$ in detecting individual optical pulses, establishing the platform as a promising candidate for developing efficient single-photon detectors.

physics.optics↗

arXiv2025

High-purity and stable single-photon emission in bilayer WSe$_2$ via phonon-assisted excitation

The excitation scheme is essential for single-photon sources, as it governs exciton preparation, decay dynamics, and the spectral diffusion of emitted photons. While phonon-assisted excitation has shown promise in other quantum emitter platforms, its proper implementation and systematic comparison with alternative excitation schemes have not yet been demonstrated in transition metal dichalcogenide (TMD) quantum emitters. Here, we investigate the impact of various optical excitation strategies on the single-photon emission properties of bilayer WSe$_2$ quantum emitters. Based on our theoretical predictions for the exciton preparation fidelity, we compare excitation via the longitudinal acoustic and breathing phonon modes to conventional above-band and near-resonance excitations. Under acoustic phonon-assisted excitation, we achieve narrow single-photon emission with a reduced spectral diffusion of 0.0129 nm, a 1.8-fold improvement over above-band excitation. Additionally, excitation through breathing-phonon mode yields a high purity of $ 0.947\pm 0.079\,$ and reduces the decay time by over an order of magnitude, reaching $(1.33 \pm 0.04)\,$ns. Our comprehensive study demonstrates the crucial role of phonon-assisted excitation in optimizing the performance of WSe$_2$-based quantum emitters, providing valuable insights for the development of single-photon sources for quantum photonics applications.

quant-ph↗

arXiv2025

Deterministic fabrication of GaAs-quantum-dot micropillar single-photon sources

This study investigates the performance of droplet-etched GaAs quantum dots (QDs) integrated into micropillar structures using a deterministic fabrication technique. We demonstrate a unity QD positioning yield across 74 devices and consistent device performance. Under p-shell excitation, the QD decay dynamics within the micropillars exhibit biexponential behavior, accompanied by intensity fluctuations limiting the source efficiency to < 4.5%. Charge stabilization via low-power above-band LED excitation effectively reduces these fluctuations, doubling the source efficiency to $\sim$ 9%. Moreover, we introduce suppression of radiation modes by introducing cylindrical rings theoretically predicted to boost the collection efficiency by a factor of 4. Experimentally, only a modest improvement is obtained, underscoring the influence of even minor fabrication imperfections for this advanced design. Our findings demonstrate the reliability of our deterministic fabrication approach in producing high-yield, uniform devices, while offering detailed insights into the influence of charge noise and complex relaxation dynamics on the performance.

physics.optics↗

arXiv2023

Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modification of other quantum dot properties. Knowledge of these effects is crucial for actual implementations of QD-based non-classical light sources for quantum communication schemes. Here, we thoroughly study single GaAs-based quantum dots grown by molecular-beam epitaxy on specially designed, digital-alloy InGaAs metamorphic buffers. With a set of structures varying in the buffer indium content and providing quantum dot emission through the telecom spectral range up to 1.6 $μ$m, we analyze the impact of the buffer and its composition on QD structural and optical properties. We identify the mechanisms of quantum dot emission shift with varying buffer composition. We also look into the charge trapping processes and compare excitonic properties for different growth conditions with single-dot emission successfully shifted to both, the second and the third telecom windows.

cond-mat.mes-hall↗

arXiv2023

Observation of room temperature excitons in an atomically thin topological insulator

Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly reflected by the rich physics of excitons in atomically thin crystals which uniquely arises from the interplay of strong Coulomb correlation, spin-orbit coupling (SOC), and lattice geometry. Here we extend the field by reporting the observation of room temperature excitons in a material of non-trivial global topology. We study the fundamental optical excitation spectrum of a single layer of bismuth atoms epitaxially grown on a SiC substrate (hereafter bismuthene or Bi/SiC) which has been established as a large-gap, two-dimensional (2D) quantum spin Hall (QSH) insulator. Strongly developed optical resonances are observed to emerge around the direct gap at the K and K' points of the Brillouin zone, indicating the formation of bound excitons with considerable oscillator strength. These experimental findings are corroborated, concerning both the character of the excitonic resonances as well as their energy scale, by ab-initio \emph{GW} and Bethe-Salpeter equation calculations, confirming strong Coulomb interaction effects in these optical excitations. Our observations provide the first evidence of excitons in a 2D QSH insulator at room temperature, with excitonic and topological physics deriving from the very same electronic structure.

cond-mat.mtrl-sci↗

arXiv2020

Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters

We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emission in the range of $1.4-2.0$ $μ$m, essential for many near-infrared photonic applications. We find that, in contrast to the InAs/InP system, the multimodal distribution results here from a two-monolayer difference in QD height between consecutive families of dots. This may stem from the long-range ordering in the quaternary barrier alloy that stabilizes QD nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally broad emission, we find a nearly dispersionless value of $1.3\pm0.3$ ns. Finally, we examine the temperature dependence of emission characteristics. We underline the impact of localized states in the wetting layer playing the role of carrier reservoir during thermal carrier redistribution. We determine the hole escape to the InAlGaAs barrier to be a primary PL quenching mechanism in these QDs.

cond-mat.mes-hall↗

arXiv2019

Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range

Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled pair of photons. However, application of single dot photoluminescence excitation spectroscopy is limited mainly to dots emitting below 1 $μ$m, while nanostructures optically active in the telecommunication windows of 1.3 and 1.55 $μ$m are of particular interest, as they correspond to the desirable wavelengths in nanophotonic applications. This report presents an approach to photoluminescence excitation spectroscopy covering this application-relevant spectral range on single dot level. Experimental details are discussed, including issues related to the tunable excitation source and its spectral filtering, and illustrated with examples of photoluminescence excitation spectroscopy results from single quantum dots emitting in both the 1.3 and 1.55 $μ$m spectral ranges.

physics.ins-det↗