arXiv subjects

Pedram Roushan

Publications and source records attributed to Pedram Roushan.

33 records · Page 2Linked to original sources

arXiv2019

Supplementary information for "Quantum supremacy using a programmable superconducting processor"

This is an updated version of supplementary information to accompany "Quantum supremacy using a programmable superconducting processor", an article published in the October 24, 2019 issue of Nature. The main article is freely available at https://www.nature.com/articles/s41586-019-1666-5. Summary of changes since arXiv:1910.11333v1 (submitted 23 Oct 2019): added URL for qFlex source code; added Erratum section; added Figure S41 comparing statistical and total uncertainty for log and linear XEB; new References [1,65]; miscellaneous updates for clarity and style consistency; miscellaneous typographical and formatting corrections.

quant-ph↗

arXiv2019

Quantum Simulators: Architectures and Opportunities

Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operation worldwide using a wide variety of experimental platforms. Recent advances in several physical architectures promise a golden age of quantum simulators ranging from highly optimized special purpose simulators to flexible programmable devices. These developments have enabled a convergence of ideas drawn from fundamental physics, computer science, and device engineering. They have strong potential to address problems of societal importance, ranging from understanding vital chemical processes, to enabling the design of new materials with enhanced performance, to solving complex computational problems. It is the position of the community, as represented by participants of the NSF workshop on "Programmable Quantum Simulators," that investment in a national quantum simulator program is a high priority in order to accelerate the progress in this field and to result in the first practical applications of quantum machines. Such a program should address two areas of emphasis: (1) support for creating quantum simulator prototypes usable by the broader scientific community, complementary to the present universal quantum computer effort in industry; and (2) support for fundamental research carried out by a blend of multi-investigator, multi-disciplinary collaborations with resources for quantum simulator software, hardware, and education.

quant-ph↗

arXiv2019

Learning Non-Markovian Quantum Noise from Moiré-Enhanced Swap Spectroscopy with Deep Evolutionary Algorithm

Two-level-system (TLS) defects in amorphous dielectrics are a major source of noise and decoherence in solid-state qubits. Gate-dependent non-Markovian errors caused by TLS-qubit coupling are detrimental to fault-tolerant quantum computation and have not been rigorously treated in the existing literature. In this work, we derive the non-Markovian dynamics between TLS and qubits during a SWAP-like two-qubit gate and the associated average gate fidelity for frequency-tunable Transmon qubits. This gate dependent error model facilitates using qubits as sensors to simultaneously learn practical imperfections in both the qubit's environment and control waveforms. We combine the-state-of-art machine learning algorithm with Moiré-enhanced swap spectroscopy to achieve robust learning using noisy experimental data. Deep neural networks are used to represent the functional map from experimental data to TLS parameters and are trained through an evolutionary algorithm. Our method achieves the highest learning efficiency and robustness against experimental imperfections to-date, representing an important step towards in-situ quantum control optimization over environmental and control defects.

quant-ph↗

arXiv2019

Entanglement and complexity of interacting qubits subject to asymmetric noise

The simulation complexity of predicting the time evolution of delocalized many-body quantum systems has attracted much recent interest, and simulations of such systems in real quantum hardware are promising routes to demonstrating a quantum advantage over classical machines. In these proposals, random noise is an obstacle that must be overcome for a faithful simulation, and a single error event can be enough to drive the system to a classically trivial state. We argue that this need not always be the case, and consider a modification to a leading quantum sampling problem-- time evolution in an interacting Bose-Hubbard chain of transmon qubits [Neill et al, Science 2018] -- where each site in the chain has a driven coupling to a lossy resonator and particle number is no longer conserved. The resulting quantum dynamics are complex and highly nontrivial. We argue that this problem is harder to simulate than the isolated chain, and that it can achieve volume-law entanglement even in the strong noise limit, likely persisting up to system sizes beyond the scope of classical simulation. Further, we show that the metrics which suggest classical intractability for the isolated chain point to similar conclusions in the noisy case. These results suggest that quantum sampling problems including nontrivial noise could be good candidates for demonstrating a quantum advantage in near-term hardware.

quant-ph↗

arXiv2019

A 28nm Bulk-CMOS 4-to-8GHz <2mW Cryogenic Pulse Modulator for Scalable Quantum Computing

Future quantum computing systems will require cryogenic integrated circuits to control and measure millions of qubits. In this paper, we report the design and characterization of a prototype cryogenic CMOS integrated circuit that has been optimized for the control of transmon qubits. The circuit has been integrated into a quantum measurement setup and its performance has been validated through multiple quantum control experiments.

quant-ph↗

arXiv2016

Topological pumping of photons in nonlinear resonator arrays

We show how to implement topological or Thouless pumping of interacting photons in one dimensional nonlinear resonator arrays, by simply modulating the frequency of the resonators periodically in space and time. The interplay between interactions and the adiabatic modulations enables robust transport of Fock states with few photons per site. We analyze the transport mechanism via an effective analytic model and study its topological properties and its protection to noise. We conclude by a detailed study of an implementation with existing circuit QED architectures.

quant-ph↗

arXiv2014

Tunable coupler for superconducting Xmon qubits: Perturbative nonlinear model

We study a recently demonstrated design for a high-performance tunable coupler suitable for superconducting Xmon and planar transmon qubits [Y. Chen et al., arXiv:1402.7367]. The coupler circuit uses a single flux-biased Josephson junction and acts as a tunable current divider. We calculate the effective qubit-qubit interaction Hamiltonian by treating the nonlinearity of the qubit and coupler junctions perturbatively. We find that the qubit nonlinearity has two principal effects: The first is to suppress the magnitude of the transverse XX coupling from that obtained in the harmonic approximation by about 15%. The second is to induce a small diagonal ZZ coupling. The effects of the coupler junction nonlinearity are negligible in the parameter regime considered.

quant-ph↗

arXiv2014

Strong environmental coupling in a Josephson parametric amplifier

We present a lumped-element Josephson parametric amplifier designed to operate with strong coupling to the environment. In this regime, we observe broadband frequency dependent amplification with multi-peaked gain profiles. We account for this behaviour using the "pumpistor" model which allows for frequency dependent variation of the external impedance. Using this understanding, we demonstrate control over gain profiles through changes in the environment impedance at a given frequency. With strong coupling to a suitable external impedance we observe a significant increase in dynamic range, and large amplification bandwidth up to 700 MHz giving near quantum-limited performance.

cond-mat.supr-con↗

arXiv2013

Fabrication and Characterization of Aluminum Airbridges for Superconducting Microwave Circuits

Superconducting microwave circuits based on coplanar waveguides (CPW) are susceptible to parasitic slotline modes which can lead to loss and decoherence. We motivate the use of superconducting airbridges as a reliable method for preventing the propagation of these modes. We describe the fabrication of these airbridges on superconducting resonators, which we use to measure the loss due to placing airbridges over CPW lines. We find that the additional loss at single photon levels is small, and decreases at higher drive powers.

cond-mat.mes-hall↗

arXiv2013

Design and characterization of a lumped element single-ended superconducting microwave parametric amplifier with on-chip flux bias line

We demonstrate a lumped-element Josephson parametric amplifier, using a single-ended design that includes an on-chip, high-bandwidth flux bias line. The amplifier can be pumped into its region of parametric gain through either the input port or through the flux bias line. Broadband amplification is achieved at a tunable frequency $ω/2 π$ between 5 to 7 GHz with quantum-limited noise performance, a gain-bandwidth product greater than 500 MHz, and an input saturation power in excess of -120 dBm. The bias line allows fast frequency tuning of the amplifier, with variations of hundreds of MHz over time scales shorter than 10 ns.

cond-mat.supr-con↗

arXiv2013

Sputtered TiN films for superconducting coplanar waveguide resonators

We present a systematic study of the properties of TiN films by varying the deposition conditions in an ultra-high-vacuum reactive magnetron sputtering chamber. By increasing the deposition pressure from 2 to 9 mTorr while keeping a nearly stoichiometric composition of Ti(1-x)N(x) (x=0.5), the film resistivity increases, the dominant crystal orientation changes from (100) to (111), grain boundaries become clearer, and the strong compressive strain changes to weak tensile strain. The TiN films absorb a high concentration of contaminants including hydrogen, carbon, and oxygen when they are exposed to air after deposition. With the target-substrate distance set to 88 mm the contaminant levels increase from ~0.1% to ~10% as the pressure is increased from 2 to 9 mTorr. The contaminant concentrations also correlate with in-plane distance from the center of the substrate and increase by roughly two orders of magnitude as the target-substrate distance is increased from 88 mm to 266 mm. These contaminants are found to strongly influence the properties of TiN films. For instance, the resistivity of stoichiometric films increases by around a factor of 5 as the oxygen content increases from 0.1% to 11%. These results suggest that the sputtered TiN particle energy is critical in determining the TiN film properties, and that it is important to control this energy to obtain high-quality TiN films. Superconducting coplanar waveguide resonators made from a series of nearly stoichiometric films grown at pressures from 2 mTorr to 7 mTorr show an increase in intrinsic quality factor from ~10^4 to ~10^6 as the magnitude of the compressive strain decreases from nearly 3800 MPa to approximately 150 MPa and the oxygen content increases from 0.1% to 8%. The films with a higher oxygen content exhibit lower loss, but the nonuniformity of the oxygen incorporation hinders the use of sputtered TiN in larger circuits.

cond-mat.supr-con↗

arXiv2011

Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators

Surfaces of topological insulators host a new class of states with Dirac dispersion and helical spin texture. Potential quantum computing and spintronic applications using these states require manipulation of their electronic properties at the Dirac energy of their band structure by inducing magnetism or superconductivity through doping and proximity effect. Yet, the response of these states near the Dirac energy in their band structure to various perturbations has remained unexplored. Here we use spectroscopic mapping with the scanning tunneling microscope to study their response to magnetic and non-magnetic bulk dopants in Bi2Te3 and Bi2Se3. Far from the Dirac energy helicity provides remarkable resilience to backscattering even in the presence of ferromagnetism. However, approaching the Dirac point, where the surface states' wavelength diverges bulk doping results in pronounced nanoscale spatial fluctuations of energy, momentum, and helicity. Our results and their connection with similar studies of Dirac electrons in graphene demonstrate that while backscattering and localization are absent for Dirac topological surface states, reducing charge defects is required for both tuning the chemical potential to Dirac energy and achieving high electrical mobility for these novel states.

cond-mat.mes-hall↗

arXiv2010

Transmission of topological surface states through surface barriers

Topological surface states are a class of novel electronic states that are of potential interest in quantum computing or spintronic applications. Unlike conventional two-dimensional electron states, these surface states are expected to be immune to localization and to overcome barriers caused by material imperfection. Previous experiments have demonstrated that topological surface states do not backscatter between equal and opposite momentum states, owing to their chiral spin texture. However, so far there is no evidence that these states in fact transmit through naturally occurring surface defects. Here we use a scanning tunnelling microscope to measure the transmission and reflection probabilities of topological surface states of antimony through naturally occurring crystalline steps separating atomic terraces. In contrast to nontopological surface states of common metals (copper, silver and gold), which are either reflected or absorbed by atomic steps, we show that topological surface states of antimony penetrate such barriers with high probability. This demonstration of the extended nature of antimony's topological surface states suggests that such states may be useful for high current transmission even in the presence of atomic scale irregularities-an electronic feature sought to efficiently interconnect nanoscale devices.

cond-mat.mes-hall↗

arXiv2010

Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1-xMnxAs

Electronic states in disordered conductors on the verge of localization are predicted to exhibit critical spatial characteristics indicative of the proximity to a metal- insulator phase transition. We have used scanning tunneling microscopy to visualize electronic states in Ga1-xMnxAs samples close to this transition. Our measurements show that doping-induced disorder produces strong spatial variations in the local tunneling conductance across a wide range of energies. Near the Fermi energy, where spectroscopic signatures of electron-electron interaction are the most prominent, the electronic states exhibit a diverging spatial correlation length. Power-law decay of the spatial correlations is accompanied by log-normal distributions of the local density of states and multifractal spatial characteristics. Our method can be used to explore critical correlations in other materials close to a quantum critical point.

cond-mat.str-el↗

arXiv2009

Topological Surface States Protected From Backscattering by Chiral Spin Texture

Topological insulators are a new class of insulators in which a bulk gap for electronic excitations is generated by strong spin orbit coupling. These novel materials are distinguished from ordinary insulators by the presence of gapless metallic boundary states, akin to the chiral edge modes in quantum Hall systems, but with unconventional spin textures. Recently, experiments and theoretical efforts have provided strong evidence for both two- and three-dimensional topological insulators and their novel edge and surface states in semiconductor quantum well structures and several Bi-based compounds. A key characteristic of these spin-textured boundary states is their insensitivity to spin-independent scattering, which protects them from backscattering and localization. These chiral states are potentially useful for spin-based electronics, in which long spin coherence is critical, and also for quantum computing applications, where topological protection can enable fault-tolerant information processing. Here we use a scanning tunneling microscope (STM) to visualize the gapless surface states of the three-dimensional topological insulator BiSb and to examine their scattering behavior from disorder caused by random alloying in this compound. Combining STM and angle-resolved photoemission spectroscopy, we show that despite strong atomic scale disorder, backscattering between states of opposite momentum and opposite spin is absent. Our observation of spin-selective scattering demonstrates that the chiral nature of these states protects the spin of the carriers; they therefore have the potential to be used for coherent spin transport in spintronic devices.

cond-mat.mtrl-sci↗