Pedro Luis Grande | Searcharxiv

arXiv2025

A Vlasov-Bohm approach to Quantum Mechanics for statistical systems

Quantum mechanics is the most successful theory to describe microscopic phenomena. It was derived in different ways over the past 100 years by Heisenberg, Schrödinger, and Feynman. At the same time, other interpretations have been suggested, including the Bohm-De Broglie interpretation and the so-called Bohmian mechanics. Here, we show that Bohmian mechanics, which utilizes the concept of the Bohm quantum potential, can also serve as a starting point for quantizing classical non-relativistic systems. By incorporating the Bohm quantum potential into the Vlasov framework, we obtain a mean-field theory that captures the corpuscular nature of matter, in agreement with quantum mechanics within the Random Phase Approximation (RPA).

quant-ph↗

arXiv2021

Ion implantation in \b{eta}-Ga2O3: physics and technology

Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed. The main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defects parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of such Ga2O3-based devices as metal oxide field effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.

cond-mat.mtrl-sci↗