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Pei Ouyang

Publications and source records attributed to Pei Ouyang.

2 recordsLinked to original sources

Dual Enhancement of Superconductivity in FeSe/SrTiO3 via Orbital and Correlation Synergy

In iron-based superconductors, the dz2 orbital band typically resides far below the Fermi level and has not been considered to participate in Cooper pairing. Here, using monolayer FeSe/SrTiO3 as a model system, we demonstrate that tip-induced tensile strain controllably shifts the dz2 band toward the Fermi level, driving a two-stage enhancement of superconductivity. In-plane lattice expansion first enhances electronic correlation, amplifying superconductivity in the initial stage. As strain further increases, the upward-shifted dz2 band hybridizes with the dxy band, reconstructing the pairing-active d-orbital bands and inducing a secondary, stronger gap enhancement. Collectively, these two stages enlarge the superconducting gap from 17.8 to 23.6 meV. Throughout this process, invariant Fermi wave vectors confirm that the enhancement originates from band renormalization and reconstruction rather than carrier doping. Our work establishes a route to tailor superconducting states via strain-activated electronic correlations and band engineering, and reveals a previously unrecognized orbital-selective pairing mechanism with broad implications for correlated multiband superconductors.

cond-mat.supr-con

Structural and electronic signatures of strain-tunable marginally twisted bilayer graphene

Marginally twisted bilayer graphene having small twist angles is predicted to exhibit unique structural and electronic properties, though experimental characterization remains limited. Using scanning tunneling microscopy, we investigate such systems with twist angles of 0.06^{\circ}-0.35^{\circ}. AA-stacked regions reveal a pronounced tunneling spectral peak signifying highly localized electronic states. Conversely, AB domains display uniform multiple spectral peaks, indicative of strong lattice reconstruction and enhanced electronic homogeneity. We identify two distinct strain-induced domain walls: one exhibits a sharp -120 meV spectral peak (shear type), while the other shows distinct spectral characteristics (mixed shear-tensile type). Tight-binding calculations verify strain-driven transformations of both domain wall types and confirm direct observation of strain-mediated domain wall transitions. These results elucidate the electronic structure of marginally twisted bilayer graphene and establish strain as a control parameter for domain wall states.

cond-mat.mes-hall