arXiv subjects

Peng Xiong

Publications and source records attributed to Peng Xiong.

23 records · Page 2Linked to original sources

arXiv2010

Band-tail shape and transport near the metal-insulator transition in Si-doped Al(0.3)Ga(0.7)As

In the present work, an infrared LED is used to photodope MBE-grown Si:Al(0.3)Ga(0.7)As, a well known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si (1x10^19 cm^-3 for sample 1 (S1) and 9x10^17 cm^-3 for sample 2 (S2)) and vary the effective electron density between 10^14 and 10^18 cm^-3. The metal-insulator transition (MIT) for S1 is found to occur at a critical carrier concentration of 5.7x10^16 cm^-3 at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band-tail of the density of states (DOS) in Al(0.3)Ga(0.7)As is found electrically through transport measurements. It is determined to be exponential in character, with an exponent of -1.25 for S1 and -1.38 for S2.

cond-mat.mtrl-sci↗

arXiv2009

Dynamic micro-Hall detection of superparamagnetic beads in a microfluidic channel

We report integration of an InAs quantum well micro-Hall sensor with microfluidics and real-time detection of moving superparamagnetic beads for biological applications. The detected positive and negative signals correspond to beads moving within and around the Hall cross area respectively. Relative magnitudes and polarities of the signals measured for a random distribution of immobilized beads over the sensor are in good agreement with calculated values and explain consistently the dynamic signal shape. The fast sensor response and its high sensitivity to off-cross area beads demonstrate its capability for dynamic detection of biomolecules and long-range monitoring of non-specific binding events.

cond-mat.other↗

arXiv2009

Nonlinear Hall effect as a signature of electronic phase separation in the semimetallic ferromagnet EuB6

This work reports a study of the nonlinear Hall Effect (HE) in the semimetallic ferromagnet EuB6. A distinct switch in its Hall resistivity slope is observed in the paramagnetic phase, which occurs at a single critical magnetization over a wide temperature range. The observation is interpreted as the point of percolation for entities of a more conducting and magnetically ordered phase in a less ordered background. With an increasing applied magnetic field, the conducting regions either increase in number or expand beyond the percolation limit, hence increasing the global conductivity and effective carrier density. An empirical two-component model expression provides excellent scaling and a quantitative fit to the HE data and may be applicable to other correlated electron systems.

cond-mat.str-el↗

arXiv2005

Magnetization Reversal in Elongated Fe Nanoparticles

Magnetization reversal of individual, isolated high-aspect-ratio Fe nanoparticles with diameters comparable to the magnetic exchange length is studied by high-sensitivity submicron Hall magnetometry. For a Fe nanoparticle with diameter of 5 nm, the magnetization reversal is found to be an incoherent process with localized nucleation assisted by thermal activation, even though the particle has a single-domain static state. For a larger elongated Fe nanoparticle with a diameter greater than 10 nm, the inhomogeneous magnetic structure of the particle plays important role in the reversal process.

cond-mat.mtrl-sci↗

arXiv2004

Modulation of Noise in Submicron GaAs/AlGaAs Hall Devices by Gating

We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to Lorentzian, are obtained by gating the Hall devices. The noise level can be reduced by up to several orders of magnitude with a moderate gate voltage of 0.2 V, whereas the carrier density increases less than 60% in the same range. The significant dependence of the Hall noise spectra on temperature and gate voltage is explained in terms of the switching processes related to impurities in n-AlGaAs.

cond-mat.mes-hall↗