arXiv subjects

Peng-Fei Ji

Publications and source records attributed to Peng-Fei Ji.

3 recordsLinked to original sources

arXiv2024

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. In this work, we achieve dual-gate tuning of MnBi2Te4 thin films grown with molecular beam epitaxy on SrTiO3(111) substrates by applying the substrate and an AlOx layer as the gate dielectrics of bottom and top gates, respectively. Under magnetic field of 9T and temperature of 20 mK, the Hall and longitudinal resistivities of the films show inversed gate-voltage dependence, for both top- and bottom-gates, signifying the existence of the dissipationless edge state contributed by Chern insulator phase in the ferromagnetic configuration. The maximum of the Hall resistivity only reaches 0.8 h/e2, even with dual-gate tuning, probably due to the high density of bulk carriers introduced by secondary phases. In the antiferromagnetic state under zero magnetic field, the films show normal insulator behavior. The dual-gated MnBi2Te4 thin films lay the foundation for developing devices based on electrically tunable topological quantum states.

cond-mat.mtrl-sci↗

arXiv2023

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in-situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.

cond-mat.mes-hall↗

arXiv2011

The newly observed open-charm states in quark model

Comparing the measured properties of the newly observed open-charm states D(2550), D(2600), D(2750), D(2760), D_{s1}(2710), D_{sJ}(2860), and D_{sJ}(3040) with our predicted spectroscopy and strong decays in a constituent quark model, we find that: (1) the $D(2\,^1S_0)$ assignment to D(2550) remains open for its too broad width determined by experiment; (2) the D(2600) and $D_{s1}(2710)$ can be identified as the $2\,^3S_1$-$1\,^3D_1$ mixtures; (3) if the D(2760) and D(2750) are indeed the same resonance, they would be the $D(1\,^3D_3)$; otherwise, they could be assigned as the $D(1\,^3D_3)$ and $D^\prime_2(1D)$, respectively; (4) the $D_{sJ}(2860)$ could be either the $D_{s1}(2710)$'s partner or the $D_s(1\,^3D_3)$; and (5) both the $D_{s1}(2P)$ and $D^\prime_{s1}(2P)$ interpretations for the $D_{sJ}(3040)$ seem likely. The $E1$ and $M1$ radiative decays of these sates are also studied. Further experimental efforts are needed to test the present quarkonium assignments for these new open-charm states.

hep-ph↗