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Pengfei Suo

Publications and source records attributed to Pengfei Suo.

2 recordsLinked to original sources

Trillion-atom molecular dynamics simulations with ab initio accuracy

Material properties are fundamentally dictated by multiscale phenomena, which often reach mesoscale in size. The {\mu}m mesoscale is also the size which can be observed directly under an optical microscope, bridging the atomistic microscopic description with the continuous model macroscopic world. In this work, we report an unprecedented molecular dynamics (MD) simulation comprising 1.62 trillion atoms. Utilizing the neuroevolution potential (NEP) framework, we attained ab initio accuracy on China's New-generation Intelligent Supercomputer. Our implementation achieves a time-to-solution (s/step/atom) 100 times faster than previous state-of-the-art machine learning force field simulations, and 1,000 times faster than the Gordon Bell Prize-winning application from six years ago. Furthermore, we demonstrate an 86.9% weak scaling efficiency from a single GPGPU to 45,000 GPGPUs. These results redefine atomistic simulation boundaries, enabling direct mesoscopic modeling with quantum-level precision.

cond-mat.mtrl-sci

Demonstration and operation of quantum harmonic oscillators in an AlGaAs-GaAs heterostructure

The quantum harmonic oscillator (QHO), one of the most important and ubiquitous model systems in quantum mechanics, features equally spaced energy levels or eigenstates. Here we present a new class of nearly ideal QHOs formed by hydrogenic substitutional dopants in an AlGaAs/GaAs heterostructure. On the basis of model calculations, we demonstrate that, when a deta-doping Si donor substitutes the Ga/Al lattice site close to AlGaAs/GaAs heterointerface, a hydrogenic Si QHO, characterized by a restoring Coulomb force producing square law harmonic potential, is formed. This gives rise to QHO states with energy spacing of about ~8-9 meV. We experimentally confirm this proposal by utilizing gate tuning and measuring QHO states using an aluminum single-electron transistor (SET). A sharp and fast oscillation with period of ~7-8 mV appears in addition to the regular Coulomb blockade (CB) oscillation with much larger period, for positive gate biases above 0.5 V. The observation of fast oscillation and its behavior is quantitatively consistent with our theoretical result, manifesting the harmonic motion of electrons from the QHO. Our results might establish a general principle to design, construct and manipulate QHOs in semiconductor heterostructures, opening future possibilities for their quantum applications.

quant-ph