arXiv subjects

Pengliang Leng

Publications and source records attributed to Pengliang Leng.

7 recordsLinked to original sources

arXiv2026

Giant bulk photovoltaic effect driven by interfacial symmetry breaking in MoS2/Ta2NiSe5 heterostructures

Van der Waals (vdW) heterostructures offer a versatile platform for engineering unconventional bulk photovoltaic (BPV) effect through interfacial symmetry breaking. However, the coexistence of multiple photophysical mechanisms, driven by structural complexity, spontaneous charge transfer, and strong interlayer coupling, often obscures the microscopic origin of the BPV response and hinders its rational optimization. Here, we demonstrate a pronounced BPV effect localized at the overlap region of a cross-bar MoS2/Ta2NiSe5 vdW heterostructure, where symmetry breaking induced by vertical stacking lifts the inversion center of MoS2. The orthogonal device geometry enables the independent probing of intralayer and interfacial photoresponse pathways, facilitating clear separation of competing mechanisms. Spontaneous interfacial charge transfer between MoS2 and Ta2NiSe5 further establishes a strong interlayer electronic coupling. By modulating the interlayer potential landscape through gate voltage and vertical electric fields, we achieve an optimized zero-bias photocurrent density of 247 A/cm2 and a BPV coefficient of 0.99 V-1. Supported by theoretical modelling, our results illustrate how minimalist device geometry can transform complex heterostructures into experimentally tractable platforms. This strategy paves the way for analyzing and optimizing interface-driven BPV effect, with implications for self-powered optoelectronics, broadband photodetection, and energy-harvesting nanodevices.

cond-mat.mes-hall↗

arXiv2026

Giant-exchange-driven Vectorial Control of a Minimal Topological Magnet in Eu3In2As4

The interplay between magnetism and band topology provides a route to controlling quantum states of matter, yet its realization in materials is often constrained by weak exchange coupling and complex electronic structures. Here, a giant exchange coupling is identified in the newly predicted topological magnet Eu3In2As4, giving rise to magnetization-dependent band shifts of up to 300 meV. Together with its intrinsically soft magnetic response, this strong cou-pling enables systematic tuning of topological phases by both the magnitude and orientation of applied magnetic fields. The magneto-topological phase diagram is mapped out in which an antiferromagnetic topological insulator ground state evolves, under modest fields, into a pro-posed intermediate 2/3-ferrimagnetic phase, and further into fully polarized ferromagnetic states predicted to host either Weyl or nodal-ring semimetals. Notably, the Weyl phase corresponds to a minimal model hosting a single pair of Weyl nodes. Quantum oscillations, anomalous Hall transport and magneto-infrared spectroscopy consistently reveal exchange-driven band recon-struction across these transitions. Rotation of the magnetization theoretically provides an effi-cient means to tune the momentum-space positions and separations of the Weyl nodes. These results establish Eu3In2As4 as a model system for exploring how strong exchange coupling can be used to control topological band structures with minimal complexity.

cond-mat.mtrl-sci↗

arXiv2025

Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4

MnBi2Te4 is a versatile platform for exploring diverse topological quantum states, yet its potential is hampered by intrinsic antisite defects. While Sb substitution has been employed to tune the Fermi level towards the charge neutral point, it exacerbates the formation of Mn-Sb antisite defects. Here, we address this challenge by combining first-principles calculations with strategic synthesis to systematically investigate and control antisite defects in Mn(Bi1-xSbx)2Te4. Our calculations reveal that increasing antisite defect density progressively destroys the field-forced magnetic Weyl state, eventually driving the system into a trivial magnetic insulator. Motivated by these findings, we develop an optimized chemical vapor transport method, yielding high-quality Mn(Bi1-xSbx)2Te4 crystals with significantly reduced antisite defect density. The emergence of strong Shubnikov-de Haas oscillations in the forced ferromagnetic state and a pronounced anomalous Hall effect near charge neutrality, with opposite signs for n- and p-type samples, confirms the type-II Weyl semimetal nature. These findings underscore the critical role of antisite defects in determining the magnetic and topological properties of Mn(Bi1-xSbx)2Te4 and establish defect engineering via optimized synthesis as a crucial strategy for realizing its exotic magnetic topological states.

cond-mat.mtrl-sci↗

arXiv2024

Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3

The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of quasiparticle scattering rate such as linear-in-temperature resistivity, while the quasiparticle coherence phenomena in this regime are much less explored due to the short mean free path at the diffusive bound. Here we report the observation of quantum oscillations from Landau quantization near the Mott-Ioffe-Regel limit in CaAs3. Despite the insulator-like temperature dependence of resistivity, CaAs3 presents giant magnetoresistance and prominent Shubnikov-de Haas oscillations from Fermi surfaces, indicating highly coherent band transport. In contrast, the quantum oscillation is absent in the magnetic torque. The quasiparticle effective mass increases systematically with magnetic fields, manifesting a much larger value than the expectation given by magneto-infrared spectroscopy. It suggests a strong many-body renormalization effect near Fermi surface. We find that these unconventional behaviors may be explained by the interplay between the mobility edge and the van Hove singularity, which results in the formation of coherent cyclotron orbits emerging at the diffusive bound. Our results call for further study on the electron correlation effect of the van Hove singularity.

cond-mat.str-el↗

arXiv2021

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator that exhibits quantum AHE in exfoliated nanoflakes. However, its complicated AHE behaviors may offer an opportunity for the unexplored correlation between magnetism and band structure. Here, we show the Berry curvature dominated intrinsic AHE in wafer-scale MnBi2Te4 thin films. By utilizing a high-dielectric SrTiO3 as the back-gate, we unveil an ambipolar conduction and electron-hole carrier (n-p) transition in ~7 septuple layer MnBi2Te4. A quadratic relation between the saturated AHE resistance and longitudinal resistance suggests its intrinsic AHE mechanism. For ~3 septuple layer MnBi2Te4, however, the AHE reverses its sign from pristine negative to positive under the electric-gating. The first-principles calculations demonstrate that such behavior is due to the competing Berry curvature between polarized spin-minority-dominated surface states and spin-majority-dominated inner-bands. Our results shed light on the physical mechanism of the gate-tunable intrinsic AHE in MnBi2Te4 thin films and provide a feasible approach to engineering its AHE.

cond-mat.mtrl-sci↗

arXiv2021

Giant nonlinear anomalous Hall effect induced by spin-dependent band structure evolution

Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and electron orders. Nonlinear AHE includes the topological Hall effect (THE) that has been widely used to identify the presence of spin chirality in real space. But it can in principle be induced by band structure evolution via Berry curvatures in the reciprocal space. This effect has been largely overlooked due to the intertwined mechanisms in both real and reciprocal spaces. Here, we observed a giant nonlinear AHE with the resistivity up to 383.5 uohm cm, contributing unprecedentedly 97% of the total Hall response in EuCd2As2. Moreover, it can be further enhanced by tilting the magnetic field 30° away from [001] direction, reaching a large anomalous Hall angle up to 21%. Although it shows exactly the same double-peak feature as THE, our scaling analysis and first-principles calculations reveal that the Berry phase is extremely sensitive to the spin canting, and nonlinear AHE is a consequence of band structure evolution under the external magnetic fields. When the spins gradually tilt from the in-plane antiferromagnetic ground state to out-of-plane direction, band crossing and band inversion occur, introducing a bandgap at Γ point at a canting angle of 45°. That contributes to the enhancement of Berry curvature and consequently a large intrinsic Hall conductivity. Our results unequivocally reveal the sensitive dependence of band structures on spin tilting process under external magnetic fields and its pronounced influence on the transport properties, which also need to be taken into consideration in other magnetic materials.

cond-mat.mtrl-sci↗

arXiv2021

Van der Waals Ferromagnetic Josephson Junctions

Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making an atomically-sharp interface from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. Owing to the remanent magnetic moment of the barrier, the critical current and the corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Through the control of this hysteresis, we can effectively trace the magnetic properties of atomic Cr2Ge2Te6 in response to the external magnetic field. Also, we observe a central minimum of critical current in some thick JJ devices, evidencing the coexistence of 0 and π phase coupling in the junction region. Our study paves the way to exploring the sensitive probes of weak magnetism and multifunctional building blocks for phase-related superconducting circuits with the use of vdW heterostructures.

cond-mat.mes-hall↗