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Per Sandström

Publications and source records attributed to Per Sandström.

2 recordsLinked to original sources

Local coordination, structural softening, and polarization-switching energetics in Sc-alloyed GaN

Sc-alloyed wurtzite nitrides exhibit strongly tunable electromechanical and ferroelectric properties, yet the relationship between their lattice evolution and local bonding environment remains insufficiently established, particularly in Sc$_x$Ga$_{1-x}$N. Here, we investigate the structural and local bonding evolution of Sc$_x$Ga$_{1-x}$N across the dilute-to-intermediate composition range by combining X-ray diffraction, Sc K-edge X-ray absorption near edge structure (XANES), extended X-ray absorption fine structure (EXAFS) and first-principles calculations. Sc incorporation produces an anisotropic lattice expansion and a progressive reduction in the c/a ratio. XANES and EXAFS reveal a concurrent modification of the local environment around Sc, with the effective Sc-N coordination number increasing from 4.1(4) to 4.5(2) and the average Sc-N bond length increasing from 2.045(7) to 2.081(8){\AA} over x=0.06-0.26. The local response is accompanied by a reduction in the Sc K-edge pre-edge intensity, consistent with a gradual reduction of the local tetrahedral asymmetry. First-principles calculations show that these structural changes are associated with site-selective distortions around Sc and progressive flattening of the structural energy landscape. The calculated intrinsic polarization-switching barrier decreases from 24.2 to 19.0 meV/{\AA}$^3$ with increasing Sc content, while the calculated piezoelectric stress coefficient (e$_{33}$) increases from 0.82 to 1.66~C/m$^2$ and elastic constant (C$_{33}$) decreases from 380 to 227~GPa, resulting in an increase of piezoelectric strain coefficient (d$_{33}$) from 2.99 to 12.46~pC/N. These results show that Sc incorporation progressively modifies the local coordination environment and structural energetics of ScGaN while the long-range wurtzite structure remains preserved over the investigated composition range.

cond-mat.mtrl-sci

A single platform with van der Pauw geometry for measurement of Seebeck coefficient, resistivity, and Hall effect of thin films

A modular thermoelectric properties measurement setup in van der Pauw configuration was developed for a straightforward and simultaneous measurement of electrical resistivity and Seebeck coefficient in an extensive temperature range of 25°C - 600°C and can also perform Hall measurements at room temperature. The setup is optimized for accurate measurement of voltages and temperatures gradients by minimizing possible errors from offset voltages, wire contributions and thermal contact resistances which helps getting reliable data. The setup is user friendly, and the measurements are fully automated and controlled using a LabVIEW program. The detachable modules make this setup quite versatile and provide an all-in-one (except thermal conductivity) solution for thermoelectric measurements.

physics.ins-det