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Pertti J. Hakonen

Publications and source records attributed to Pertti J. Hakonen.

29 records · Page 2Linked to original sources

Decoherence, Autler-Townes effect, and dark states in two-tone driving of a three-level superconducting system

We present a detailed theoretical analysis of a multi-level quantum system coupled to two radiation fields and subject to decoherence. We concentrate on an effect known from quantum optics as the Autler-Townes splitting, which has been recently demonstrated experimentally [M. A. Sillanpaa et al., Phys. Rev. Lett. 103, 193601 (2009)] in a superconducting phase qubit. In the three-level approximation, we derive analytical solutions and describe how they can be used to extract the decoherence rates and to account for the measurement data. Better agreement with the experiment can be obtained by extending this model to five levels. Finally, we investigate the stationary states created in the experiment and show that their structure is close to that of dark states.

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Energy relaxation in graphene and its measurement with supercurrent

We study inelastic energy relaxation in graphene for low energies to find out how electrons scatter with acoustic phonons and other electrons. By coupling the graphene to superconductors, we create a strong dependence of the measured signal, i.e.,\ critical Josephson current, on the electron population on different energy states. Since the relative population of high- and low-energy states is determined by the inelastic scattering processes, the critical current becomes an effective probe for their strength. We argue that the electron-electron interaction is the dominant relaxation method and, in our model of two-dimensional electron-electron scattering, we find a scattering time $τ_{e-e}=5... 13$ ps at T=500 mK, 1-2 orders of magnitude smaller than predicted by theory.

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Autler-Townes effect in a superconducting three-level system

When a three-level quantum system is irradiated by an intense coupling field resonant with one of the three possible transitions, the absorption peak of an additional probe field involving the remaining level is split. This process is known in quantum optics as the Autler-Townes effect. We observe these phenomena in a superconducting Josephson phase qubit, which can be considered an "artificial atom" with a multilevel quantum structure. The spectroscopy peaks can be explained reasonably well by a simple three-level Hamiltonian model. Simulation of a more complete model (including dissipation, higher levels, and cross-coupling) provides excellent agreement with all the experimental data.

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Strong gate coupling of high-Q nanomechanical resonators

The detection of mechanical vibrations near the quantum limit is a formidable challenge since the displacement becomes vanishingly small when the number of phonon quanta tends towards zero. An interesting setup for on-chip nanomechanical resonators is that of coupling them to electrical microwave cavities for detection and manipulation. Here we show how to achieve a large cavity coupling energy of up to (2 π) 1 MHz/nm for metallic beam resonators at tens of MHz. We used focused ion beam (FIB) cutting to produce uniform slits down to 10 nm, separating patterned resonators from their gate electrodes, in suspended aluminum films. We measured the thermomechanical vibrations down to a temperature of 25 mK, and we obtained a low number of about twenty phonons at the equilibrium bath temperature. The mechanical properties of Al were excellent after FIB cutting and we recorded a quality factor of Q ~ 3 x 10^5 for a 67 MHz resonator at a temperature of 25 mK. Between 0.2K and 2K we find that the dissipation is linearly proportional to the temperature.

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Current-Phase Relation and Josephson Inductance of Superconducting Cooper Pair Transistor

We have investigated the Josephson inductance $L_J$ of a Superconducting Cooper Pair Transistor (SCPT). We traced the inductance using microwave reflection measurements on a tuned resonance circuit in which a SCPT was mounted in parallel to a $ \sim 200$ pH strip line inductance. When the inverse of the Josephson inductance, determined on the charge-phase bias plane for a SCPT with a Josephson to Coulomb energy ratio of $E_J/E_C =1.75$, is integrated over the phase, we obtain a current-phase relation, which is strongly non-sinusoidal near the charge degeneracy point.

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Accessing nanomechanical resonators via a fast microwave circuit

The measurement of micron-sized mechanical resonators by electrical techniques is difficult, because of the combination of a high frequency and a small mechanical displacement which together suppress the electromechanical coupling. The only electromagnetic technique proven up to the range of several hundred MHz requires the usage of heavy magnetic fields and cryogenic conditions. Here we show how, without the need of either of them, to fully electrically detect the vibrations of conductive nanomechanical resonators up to the microwave regime. We use the electrically actuated vibrations to modulate an LC tank circuit which blocks the stray capacitance, and detect the created sideband voltage by a microwave analyzer. We show the novel technique up to mechanical frequencies of 200 MHz. Finally, we estimate how one could approach the quantum limit of mechanical systems.

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Charge sensitivity of the Inductive Single-Electron Transistor

We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than $10^{-6}$e$/\sqrt{\mathrm{Hz}}$ is possible with a high $Q$-value $\sim 10^3$, or using a SQUID amplifier. The model is compared to experiment, where charge sensitivity $3 \times 10^{-5}$e$/\sqrt{\mathrm{Hz}}$ and bandwidth 100 MHz are achieved.

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Direct measurements of tunable Josephson plasma resonance in the L-SET

Phase dynamics has been measured in a driven mesoscopic Josephson oscillator where the resonance is tuned either by magnetic flux or by gate charge modulation of the Josephson inductance. Phenomena are analyzed in terms of a "phase particle picture", and by numerical circuit simulations. An analogy to switching of a DC-biased junction into voltage state is discussed. Operation principle of the recently demonstrated Inductive Single-Electron transistor (L-SET) based on the driven oscillator is reviewed. The obtained charge sensitivity implies that a performance comparable to the best rf-SETs has already been reached with the novel device.

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Dynamics of the Inductive Single-Electron Transistor

Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a regime of nonlinear dynamics, a shift of the oscillator resonant frequency is discovered which has a direct analogy to the switching of a dc-biased Josephson junction into voltage state. Results are reviewed for the predicted charge sensitivity, and it is shown that a performance challenging the best rf-SETs is foreseeable with the new device.

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The Inductive Single-Electron Transistor (L-SET)

We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity $1.4 \times 10^{-4}e/\sqrt{Hz}$, limited by preamplifier, is achieved in an operation mode which takes advantage of the nonlinearity of the Josephson potential. Owing to reactive readout, our setup has more than two orders of magnitude lower dissipation than the existing method of radio-frequency electrometry. With an optimized sample, we expect uncoupled energy sensitivity below $\hbar$ in the same experimental scheme.

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Titanium single electron transistor fabricated by electron-beam lithography

A new method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single electron transistor which operated at $T < 0.4$ K and had a moderate charge noise of $2.5 \times 10^{-3}$ e/$\sqrt{\mathrm{Hz}}$ at 10 Hz. Based on nonlinearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV.

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