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Peter Grünberg

Publications and source records attributed to Peter Grünberg.

2 recordsLinked to original sources

Prediction of Novel Stable 2D-Silicon with Fivefold Coordination

Silicene, an analogue of graphene, was so far predicted to be the only two-dimensional silicon (2D-Si) with massless Dirac fermions. Here we predict a brand new 2D-Si Dirac semimetal, which we name siliconeet [silik'ni:t]. Unexpectedly, it has a much lower energy than silicene and robust direction-dependent Dirac cones with Fermi velocities comparable to those in graphene. Remarkably, its peculiar structure based on pentagonal rings and fivefold coordination plays a critical role in the novel electronic properties. Taking spin-orbit coupling into account, siliconeet can also be recognized as a 2D-topological insulator with a larger nontrivial band gap than silicene.

cond-mat.mtrl-sci

Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

cond-mat.mes-hall