arXiv subjects

Peter J. M. van der Slot

Publications and source records attributed to Peter J. M. van der Slot.

At least 19 recordsLinked to original sources

arXiv2024

Physical mode analysis of multimode cascaded nonlinear processes in strongly-coupled waveguides

We experimentally investigate on-chip control and analysis of spatially multimode nonlinear interactions in silicon nitride waveguide circuits. Using widely different dispersion of transverse supermodes in a strongly-coupled dual-core waveguide section, and using integrated pairs of input and output single-mode waveguides, we enable controlled excitation of nonlinear processes in multiple supermodes, while a basic physical mode decomposition aids the identification of parallel and cascaded processes. Pumping with ultrashort pulses at 1.5-$μ$m wavelength (around 195-THz light frequency), we observe simultaneous dual-supermode, near-infrared supercontinuum generation having different spectral widths, in parallel with third-harmonic generation at around 515 nm (582 THz). Cascaded four-wave mixing with supercontinuum components upconverts the third-harmonic radiation toward a set of four shorter blue wavelengths emitted in the range between 485 and 450 nm (617 to 661 THz). The approach taken here, i.e., using chip-integrated spatial multiplexing and demultiplexing for excitation and analysis of broadband transverse nonlinear conversion, can be an advanced tool for better understanding and control in multimode nonlinear optics, such as for extending frequency conversion to wider spectral ranges via extra phase matching paths.

physics.optics↗

arXiv2024

Surface acoustic waves Brillouin photonics on a silicon nitride chip

Seamlessly integrating stimulated Brillouin scattering (SBS) in a low-loss and mature photonic integration platform remains a complicated task. Virtually all current approaches fall short in simultaneously achieving strong SBS, low losses, and technological scalability. In this work we incorporate stong SBS into a standard silicon nitride platform by a simple deposition of a tellurium oxide layer, a commonly used material for acousto-optic modulators. In these heterogeneously integrated waveguides, we harness novel SBS interactions actuated by surface acoustic waves (SAWs) leading to more than two orders of magnitude gain enhancement. Three novel applications are demonstrated in this platform: (i) a silicon nitride Brillouin amplifier with 5 dB net optical gain, (ii) a compact intermodal stimulated Brillouin laser (SBL) capable of high purity radio frequency (RF) signal generation with 7 Hz intrinsic linewidth, and (iii) a widely tunable microwave photonic notch filter with ultra-narrow linewidth of 2.2 MHz enabled by Brillouin induced opacity. These advancements can unlock an array of new RF and optical technologies to be directly integrated in silicon nitride.

physics.optics↗

arXiv2024

Chip-integrated extended-cavity mode-locked laser in the visible

Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However additional challenges, such as a higher propagation loss and smaller alignment tolerances have prevented the realization of such lasers in the visible range. Here, we demonstrate the first chip-integrated mode-locked diode laser in the visible using an integrated photonic circuit for cavity extension. Based on a gallium arsenide gain chip and a low-loss silicon nitride feedback circuit, the laser is passively mode-locked using a saturable absorber implemented by focused ion beam milling. At a center wavelength of 642 nm, the laser shows an average output power of 3.4 mW, with a spectral bandwidth of 1.5 nm at a repetition rate of 7.84 GHz.

physics.optics↗

arXiv2024

Widely-tunable and narrow-linewidth hybrid-integrated diode laser at 637 nm

We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of HeNe lasers (633 nm). The lasers provide wide mode-hop free tuning up to 97 GHz and a narrow intrinsic linewidth down to 10 kHz. The maximum output power is 2.5 mW in a single-mode fiber, corresponding to an on-chip power of 4.0 mW. Full integration and packaging in a standard housing with fiber pigtails provide high intrinsic stability and will enable integration into complex optical systems.

physics.optics↗

arXiv2023

Wakefields In Superconducting RF Cavities and The Impact on VUV Free-electron Laser Oscillator Performance

The Fermilab Accelerator Science and Technology (FAST) facility is currently in operation with its linac based on TESLA-type superconducting rf cavities. Using a 3-MHz micropulse repetition rate with a long macropulse composed of up to 3000 micropulses, and with beam energies demonstrated at 300 MeV and projected to reach 800 MeV with two additional cryomodules, the feasibilities for a vacuum ultraviolet (VUV) and an extreme ultraviolet (EUV) free-electron laser oscillator (FELO) with the two energies are evaluated. We have used both the GINGER code with an oscillator module and the MINERVA/OPC code to assess FELO saturation prospects at 120 nm with a 5.0-cm-period undulator of 4.5-m length and the MINERVA/OPC code to assess the FELO at 13.4 nm with adjusted parameters. The simulation results support saturation at both of these wavelengths which are much shorter than the demonstrated shortest wavelength record of 168.6 nm from a storage-ring-based FELO. This indicates superconducting rf linac-driven FELOs can be extended into this VUV-EUV wavelength regime previously only reached with single-pass FEL configurations. In addition, emittance-dilution effects due to wakefields in the cavities and the resulting sub-macropulse centroid slew effects on FELO performance are addressed using MINERVA/OPC simulations for the first time.

physics.acc-ph↗

arXiv2023

On-Chip Phase-Shift Induced Control of Supercontinuum Generation in a Dual-Core Si$\mathbf{_{3}}$N$\mathbf{_{4}}$ Waveguide

We investigate on-chip spectral control of supercontinuum generation, taking advantage of the additional spatial degree of freedom in strongly-coupled dual-core waveguides. Using numerical integration of the multi-mode generalized nonlinear Schrödinger equation, we show that, with proper waveguide cross-section design, selective excitation of supermodes can vary the dispersion to its extremes, i.e., all-normal or anomalous dispersion can be selected via phase shifting in a Mach-Zehnder input circuit. The resulting control allows to provide vastly different supercontinuum spectra with the same waveguide circuit.

physics.optics↗

arXiv2023

Long-term absolute frequency stabilization of a hybrid-integrated InP-Si3N4 diode laser

Hybrid integrated diode lasers based on combining semiconductor optical amplifiers with low-loss Si3N4-based feedback circuits enable great laser performance for advanced photonic circuits. In particular, using high-Q Si3N4 ring resonators for frequency-selective feedback provides wide spectral coverage, mode-hop free tuning, and high frequency stability on short timescales, showing as ultra-narrow intrinsic linewidths. However, many applications also require long-term stability, which can be provided by locking the laser frequency to a suitable reference. We present the stabilization of a hybrid-integrated laser, which is widely tunable around the central wavelength of 1550 nm, to a fiber-based optical frequency discriminator (OFD) and to an acetylene absorption line. By locking the laser to the OFD, the laser's fractional frequency stability is improved down to 2.1$\cdot$10$^{-12}$ over an averaging time of 0.5 ms. For absolute stability over longer times of several days, we successfully lock the laser frequency to an acetylene absorption line. This limits the frequency deviations of the laser to a range of less than 12 MHz over 5 days.

physics.optics↗

arXiv2021

A hybrid-integrated diode laser in the visible spectral range

Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration of a hybrid-integrated diode laser in the visible spectral range. Using an AlGaInP optical amplifier coupled to a low-loss Si3N4 feedback circuit based on microring resonators, we obtain a spectral coverage of 10.8 nm around 684.4 nm wavelength with up to 4.8 mW output power. The measured intrinsic linewidth is 2.3$\pm$0.2 kHz.

physics.optics↗

arXiv2021

Three-dimensional, time-dependent analysis of high- and low-Q free-electron laser oscillators

Free-electron lasers (FELs) have been designed to operate over virtually the entire electromagnetic spectrum from microwaves through x-rays and in a variety of configurations including amplifiers and oscillators. Oscillators can operate in both the low and high gain regime and are typically used to improve the spatial and temporal coherence of the light generated. We will discuss various FEL oscillators ranging from systems with high-quality resonators combined with low-gain undulators to systems with a low-quality resonator combined with a high-gain undulator line. The FEL gain code MINERVA and wavefront propagation code OPC are used to model the FEL interaction within the undulator and the propagation in the remainder of the oscillator, respectively. We will not only include experimental data for the various systems for comparison when available, but also present for selected cases how the two codes can be used to study the effect of mirror aberrations and thermal mirror deformation on FEL performance.

physics.acc-ph↗

arXiv2020

High-purity microwave generation using a dual-frequency hybrid integrated semiconductor-dielectric waveguide laser

We present an integrated semiconductor-dielectric hybrid dual-frequency laser operating in the 1.5 $μ$m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a record-narrow intrinsic linewidth as low as about 2 kHz. This is realized by hybrid integration of a single diode amplifier based on indium phosphide (InP) with a long, low-loss silicon nitride (Si$_3$N$_4$) feedback circuit to extend the cavity photon lifetime, resulting in a cavity optical roundtrip length of about 30 cm on a chip. Simultaneous lasing at two frequencies is enabled by introducing an external control parameter for balancing the feedback from two tunable, frequency-selective Vernier mirrors on the Si$_3$N$_4$ chip. Each frequency can be tuned with a wavelength coverage of about 80 nm, potentially allowing for the generation of a broad range of frequencies in the microwave range up to the THz range.

physics.app-ph↗

arXiv2020

Ultra-narrow linewidth hybrid integrated semiconductor laser

We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limitations through nonlinear loss. We achieve single-frequency oscillation with up to 23 mW fiber coupled output power, 70-nm wide spectral coverage in the 1.55 $μ$m wavelength range with 3 mW output, and obtain more than 60 dB side mode suppression. Such properties and options for further linewidth narrowing render the approach of high interest for direct integration in photonic circuits serving microwave photonics, coherent communications, sensing and metrology with highest resolution.

physics.optics↗

arXiv2019

Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser

Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. We present a method that increases the range of continuous tuning to that of a short equivalent laser cavity, while maintaining the ultra-narrow linewidth of a long cavity. Using a single-frequency hybrid integrated InP-Si3N4 diode laser with 120 nm coverage around 1540 nm, with a maximum output of 24 mW and lowest intrinsic linewidth of 2.2 kHz, we demonstrate a six-fold increased continuous and mode-hop-free tuning range of 0.22 nm (28 GHz) as compared to the free-spectral range of the laser cavity.

physics.optics↗

arXiv2019

Hybrid integrated semiconductor lasers with silicon nitride feedback circuits

Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.

physics.optics↗

arXiv2019

Surface acoustic waves for acousto-optic modulation in buried silicon nitride waveguides

We theoretically investigate the use of Rayleigh surface acoustic waves (SAWs) for refractive index modulation in optical waveguides consisting of amorphous dielectrics. Considering low-loss Si$_3$N$_4$ waveguides with a standard core cross section of 4.4$\times$0.03 $μ$m$^2$ size, buried 8 $μ$m deep in a SiO$_2$ cladding we compare surface acoustic wave generation in various different geometries via a piezo-active, lead zirconate titanate film placed on top of the surface and driven via an interdigitized transducer (IDT). Using numerical solutions of the acoustic and optical wave equations, we determine the strain distribution of the SAW under resonant excitation. From the overlap of the acoustic strain field with the optical mode field we calculate and maximize the attainable amplitude of index modulation in the waveguide. For the example of a near-infrared wavelength of 840 nm, a maximum shift in relative effective refractive index of 0.7x10$^{-3}$ was obtained for TE polarized light, using an IDT period of 30 - 35 $μ$m, a film thickness of 2.5 - 3.5 $μ$m, and an IDT voltage of 10 V. For these parameters, the resonant frequency is in the range 70 - 85 MHz. The maximum shift increases to 1.2x10$^{-3}$, with a corresponding resonant frequency of 87 MHz, when the height of the cladding above the core is reduced to 3 $μ$m. The relative index change is about 300-times higher than in previous work based on non-resonant proximity piezo-actuation, and the modulation frequency is about 200-times higher. Exploiting the maximum relative index change of 1.2$\times$10$^{-3}$ in a low-loss balanced Mach-Zehnder modulator should allow full-contrast modulation in devices as short as 120 $μ$m (half-wave voltage length product = 0.24 Vcm).

physics.optics↗

arXiv2019

Integrated frequency comb laser with narrow intrinsic optical linewidth based on a dielectric waveguide feedback circuit

We present an integrated hybrid semiconductor-dielectric (InP-Si$_3$N$_4$) waveguide laser that generates frequency combs at a wavelength around 1.5 $μ$m with a record-low intrinsic optical linewidth of 34 kHz. This is achieved by extending the cavity photon lifetime using a low-loss dielectric waveguide circuit. In our experimental demonstration, the on-chip, effective optical path length of the laser cavity is extended to 6 cm. The resulting linewidth narrowing shows the high potential of on-chip, highly coherent frequency combs with direct electrical pumping, based on hybrid and heterogeneous integrated circuits making use of low-loss dielectric waveguides.

physics.optics↗

arXiv2017

Photo-induced second-order nonlinearity in stoichiometric silicon nitride waveguides

We report the observation of second-harmonic generation in stoichiometric silicon nitride waveguides grown via low-pressure chemical vapour deposition. Quasi-rectangular waveguides with a large cross section were used, with a height of 1 μm and various different widths, from 0.6 to 1.2 μm, and with various lengths from 22 to 74 mm. Using a mode-locked laser delivering 6-ps pulses at 1064 nm wavelength with a repetition rate of 20 MHz, 15% of the incoming power was coupled through the waveguide, making maximum average powers of up to 15 mW available in the waveguide. Second-harmonic output was observed with a delay of minutes to several hours after the initial turn-on of pump radiation, showing a fast growth rate between 10$^{-4}$ to 10$^{-2}$ s$^{-1}$, with the shortest delay and highest growth rate at the highest input power. After this first, initial build-up, the second-harmonic became generated instantly with each new turn-on of the pump laser power. Phase matching was found to be present independent of the used waveguide width, although the latter changes the fundamental and second-harmonic phase velocities. We address the presence of a second-order nonlinearity and phase matching, involving an initial, power-dependent build-up, to the coherent photogalvanic effect. The effect, via the third-order nonlinearity and multiphoton absorption leads to a spatially patterned charge separation, which generates a spatially periodic, semi-permanent, DC-field-induced second-order susceptibility with a period that is appropriate for quasi-phase matching. The maximum measured second-harmonic conversion efficiency amounts to 0.4% in a waveguide with 0.9 x 1 μm$^2$ cross section and 36 mm length, corresponding to 53 μW at 532 nm with 13 mW of IR input coupled into the waveguide. The according $χ^{(2)}$ amounts to 3.7 pm/V, as retrieved from the measured conversion efficiency.

physics.optics↗

arXiv2015

High confinement, high yield Si3N4 waveguides for nonlinear optical application

In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

physics.optics↗

arXiv2013

Integrated CARS Source based on Seeded Four-wave Mixing in Silicon Nitride

We present a theoretical investigation of an integrated nonlinear light source for coherent anti-Stokes Raman scattering (CARS) based on silicon nitride waveguides. Wavelength tunable and temporally synchronized signal and idler pulses are obtained by using seeded four-wave mixing. We find that the calculated input pump power needed for nonlinear wavelength generation is more than one order of magnitude lower than in previously reported approaches based on optical fibers. The tuning range of the wavelength conversion was calculated to be 1418 nm to 1518 nm (idler) and 788 nm to 857 nm (signal), which corresponds to a coverage of vibrational transitions from 2350 cm$^{-1}$ to 2810 cm$^{-1}$. A maximum conversion efficiency of 19.1% at a peak pump power of 300 W was obtained.

physics.optics↗