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Peter P. Murmu

Publications and source records attributed to Peter P. Murmu.

3 recordsLinked to original sources

Strain-induced suppression of thermochromism in divalent cobalt molybdate thin films

Thermochromic oxides provide a platform for coupling lattice, electronic, and magnetic degrees of freedom, with divalent cobalt molybdate $CoMoO_4$ as a prototypical example. Despite extensive studies on powders, its thin-film behaviour - critical for device applications - remains largely unexplored. Here, we present a combined experimental and theoretical investigation of $CoMoO_4$ thin films, including the first THz-VIS-UV spectra of $β- CoMoO_4$ in thin-film form. In contrast to bulk powders, which undergo a first order $β\rightarrow α$ structural transition near 230K, the thin films retain the high-temperature $β-$phase across the entire temperature range. We show that microstrain fundamentally reshapes the phase landscape, suppressing thermochromism and stabilizing the $β-$phase. The optical spectra reveal pronounced phonon and electronic anomalies, including a softening of a low-energy, cation-dominated phonon (42cm$^{-1}$) upon cooling, in contrast to conventional mode-hardening. This behaviour indicates incipient atomic displacements analogous to those driving the bulk $β\rightarrow α$ transition, despite the absence of a structural phase change, and saturates between 200 and 150K. Temperature-dependent X-ray diffraction confirms persistent β-phase symmetry with increasing microstrain, consistent with strain-induced frustration of the first-order transition. At higher energies (0.12-3.7eV), the optical response exhibits a blue-shift of Co$^{2+}$crystal-field transitions and charge-transfer excitations, indicating a strain-enhanced ligand field. Supported by structural refinements and theoretical calculations, we identify crystal field strengthening as the key mechanism stabilizing the $β$-phase. These results establish strain as a thermodynamic lever to control phase stability and functional properties in thermochromic oxides.

cond-mat.mtrl-sci

Fast spin precession and strong perpendicular magnetic anisotropy in ferrimagnetic Mn4N thin films improved by Pd buffer layer

Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline structure and magnetic properties affected by the Pd buffer layer. We demonstrated that both crystalline quality and perpendicular magnetic anisotropy (PMA) of Mn4N thin films are enhanced significantly due to the relaxation of tensile stress induced by the Pd buffer layer. We also demonstrated a fast spin precession at room temperature, almost 100 GHz, in Mn4N thin films. With the characteristics of high thermal stability, enhanced PMA by buffer layer and fast spin precession, Mn4N thin film is a promising material for spintronic applications.

cond-mat.mtrl-sci

Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation

Copper(I) iodide, CuI, is the leading $p$-type non-toxic and earth-abundant semiconducting material for transparent electronics and thermoelectric generators. Defects play a crucial role in determining the carrier concentration, scattering process, and therefore thermoelectric performance of a material. A result of defect engineering, the power factor of thin film CuI was increased from $332\pm32$ μWm$^{-1}$K$^{-2}$ to $578\pm58$ μWm$^{-1}$K$^{-2}$ after implantation with noble gas ions (Ne, Ar, Xe). The increased power factor is due to a decoupling of the Seebeck coefficient and electrical conductivity identified through a changing scattering mechanism. Ion implantation causes the abundant production of Frenkel pairs, which were found to suppress compensating donors in CuI, and which scenario was also supported by density functional theory calculations. The compensating donor suppression led to a significantly improved Hall carrier concentration, increasing from $6.5\times10^{19}\pm0.1\times10^{19}$ cm$^{-3}$ to $11.5\times10^{19}\pm0.4\times10^{19}$ cm$^{-3}$. This work provides an important step forward in the development of CuI as a transparent conducting material for electronics and thermoelectric generators by introducing beneficial point defects with ion implantation.

cond-mat.mtrl-sci