arXiv subjects

Peter Stano

Publications and source records attributed to Peter Stano.

At least 19 recordsLinked to original sources

arXiv2026

Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles

Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley splitting is small, of order 100 $\mu$eV in Si/SiGe quantum wells. Substantial efforts were invested both in theory and experiments to overcome the valley issue. Unfortunately, the existing recipes either rely on atomistic details of the interface that are beyond experimental control, or demand heterostructure profiles beyond current state-of-the-art heterostructure epitaxy. We revisit the valley splitting induced by non-trivial Ge profiles and advocate a novel view of the intervalley coupling as a backscattering on point-like impurities realized by crystal planes containing Ge atoms. This perspective reveals that enhancing the backscattering amplitude, which sets the valley splitting, requires constructive interference of multiple scatterers. % We arrive at a remarkable prediction, that the Ge content along the heterostructure growth direction does not have to have any specific periodicity, including the practically unreachable $2\pi/(2k_0)$ period, to significantly increase the valley splitting. This statement is corroborated with numerical evidence from tight-binding simulations and intuitive physical interpretations. We devise profiles that seem within the capabilities of current MBE growth techniques and boost the valley splitting beyond the 1\,meV scale.

cond-mat.mes-hall↗

arXiv2026

Scaling of silicon spin qubits under correlated noise

The path to fault-tolerant quantum computing hinges on hardware that scales while remaining compatible with quantum error correction (QEC). Silicon spin qubits are a leading hardware candidate because they combine industrial fabrication compatibility with a nanoscale footprint that could accommodate millions of qubits on a chip. However, their suitability for QEC remains uncertain since spatially correlated noise naturally emerges from the resulting close proximity of qubits. These correlations increase the likelihood of simultaneous errors and erode the redundancy that QEC depends on. Here we quantify the spatial extent of noise correlations in a five-qubit silicon array and assess their impact on QEC. We identify two distinct sources of correlated noise: global magnetic field drifts that generate perfectly correlated fluctuations, and charge noise from two-level fluctuators that produces short-range correlations decaying within neighboring qubits. While magnetic drifts represent a critical correlated noise source that can compromise QEC, they can be mitigated. In contrast, the measured charge noise correlations are moderate, electrically tunable, and compatible with fault-tolerant operation with minimal qubit overhead. Our results establish quantitative benchmarks for correlated noise and clarify how such correlations impact the viability of quantum error correction in scalable qubit arrays.

cond-mat.mes-hall↗

arXiv2025

In-situ control of hole-spin driving mechanisms

Hole-spin qubits enable fast, all-electrical spin manipulation through electric-dipole spin resonance (EDSR), arising from two microscopic mechanisms rooted in their intrinsically strong spin-orbit interaction. Depending on how the electric field acts on the quantum dot, the spin can be driven either by a modulation of its g-factor or by a displacement of the wavefunction. Here, we demonstrate in-situ control over the dominant EDSR driving mechanism of a hole-spin qubit in a silicon fin field-effect transistor by applying microwave signals to two different gate electrodes, thereby tuning the orientation of the local electric field. We measure the effective g-factor, its electrical tunability, and the Rabi frequency as functions of magnetic-field orientation. Their distinct angular dependencies, analyzed using a g-matrix formalism, allow us to identify the underlying driving processes and track their relative contributions for different drive configurations. By selecting the drive electrode, we can switch from a regime dominated by g-factor modulation to one with a strong contribution from wavefunction displacement. This in-situ tunability provides direct experimental access to both spin-driving mechanisms and offers a route toward optimized spin-qubit performance.

cond-mat.mes-hall↗

arXiv2025

Noise cross-correlations from single-shot measurements

We introduce a novel method that we call Single-Shot Cross-Spectroscopy (SSCS), for extracting the auto- and cross-power spectral densities of dephasing noise of a qubit pair. The method uses straightforward input, namely single-shot readouts from single-qubit Ramsey-type experiments, and is resilient against errors in state preparation and measurement. We apply it to experimental data from a semiconductor spin-qubit device and obtain noise spectra over five orders of magnitude in frequency (5 mHz--500 Hz). Compared to other techniques, SSCS enables access to noise correlations in the previously inaccessible intermediate-frequency range (1--500 Hz) for spin qubits, and can be further extended with faster readout. More broadly, the frequency range accessible with SSCS is limited only by the experiment repetition rate, and scales accordingly on other platforms.

quant-ph↗

arXiv2025

Spin-qubit readout analysis based on a hidden Markov model

Across most qubit platforms, the readout fidelities do not keep up with the gate fidelities, and new ways to increase the readout fidelities are searched for. For semiconductor spin qubits, a typical qubit-readout signal consists of a finite stretch of a digitized charge-sensor output. Such a signal trace is usually analyzed by compressing it into a single value, either maximum or sum. The binary measurement result follows by comparing the single value to a decision threshold fixed in advance. This threshold method, while simple and fast, omits information that could potentially improve the readout fidelity. Here, we analyze what can be achieved by more sophisticated signal-trace processing using the hidden Markov model (HMM). The HMM is a natural choice, being the optimal statistical processing if the noise is white. It also has a computationally efficient implementation, known as the forward-backward algorithm, making HMM processing practical. However, unlike in many computer-simulation studies, in real experiments the noise is correlated. How this change affects the HMM implementation and reliability is our subject. We find that the HMM using white noise as the system statistical model is surprisingly sensitive to correlations; it only tolerates very small correlation times. We suggest alleviating this deficiency by a signal prefiltering. The correlations have a similar strongly negative impact on the HMM model calibration (the Baum-Welch algorithm). Besides studying the effects of noise correlations, as a specific application of the HMM we calculate the readout fidelity at elevated temperatures, relevant to recent experimental pursuits of hot spin qubits.

quant-ph↗

arXiv2025

Inferring charge-noise source locations from correlations in spin qubits

We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra are not well described by a power law; instead, they reveal the presence of a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.

cond-mat.mes-hall↗

arXiv2024

The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices

We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit noise power spectrum over a frequency range of nine orders of magnitude without any gaps. We find that the low-frequency noise spectrum is similar across three different devices suggesting that it is dominated by the hyperfine coupling to nuclei. The effects of charge noise are smaller, but not negligible, and are device dependent as confirmed from the noise cross-correlations. We also observe differences to spectra reported in GaAs {[Phys. Rev. Lett. 118, 177702 (2017), Phys. Rev. Lett. 101, 236803 (2008)]}, which we attribute to the presence of the valley degree of freedom in silicon. Finally, we observe $T_2^*$ to increase upon increasing the external magnetic field, which we speculate is due to the increasing field-gradient of the micromagnet suppressing nuclear spin diffusion.

cond-mat.mes-hall↗

arXiv2024

Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases

We theoretically investigate heavy-hole--light-hole mixing in two-dimensional hole gases (2DHG). We restrict our analysis to the zone center, appropriate for the low-density regime, which leads to a simple description, analytical results, and physical insights. We identify two different types of hole-Hamiltonian terms concerning mixing. The first type changes the direction of the pure spinors, without admixing light-hole components. It is efficient for Rabi driving the heavy-hole spin. The second type induces mixing and changes the eigenvalues of the $g$-tensor. We analyze several measures that characterize the mixing quantitatively in Ge, Si, and GaAs, namely the $g$-factor, the light-hole weight in the wave function, the off-diagonal matrix elements in the Hamiltonian, and the strength of the induced spin-orbit interaction. We identify the canonical coordinate frame associated with a generic spin-3/2 Hamiltonian with time-reversal symmetry (TRS). In this coordinate frame, the mixing is quantified by a single parameter, the mixing angle $\vartheta$. We interpret it as the canonical (coordinate-frame and Hamiltonian-basis independent) measure of the heavy-hole--light-hole mixing. All the investigated mixing measures are simple functions of $\vartheta$. As an illustration, we use our model to analyze heavy-hole spin qubit $g$-tensor, dephasing, relaxation, and Rabi frequencies, interpreting the arising effects as due to rotations of the canonical frame and changes of the mixing angle $\vartheta$.

cond-mat.mes-hall↗

arXiv2024

Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits

On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine interactions between electron and nuclear spins impose a major challenge. Silicon is a promising host material because one can enhance the spin coherence time by removing spinful $^{29}$Si isotopes. As more experiments rely on isotopic purification of Si, the role of other spinful atoms in the device should be clarified. This is not a straightforward task, as the hyperfine interactions with atoms in the barrier layers are poorly understood. We utilize density functional theory to determine the hyperfine tensors of both Si and Ge in a crystalline epitaxial Si/SiGe quantum well as well as Si and O atoms in an amorphous Si/SiO$_2$ (MOS) interface structure. Based on these results, we estimate the dephasing time $T_2^*$ due to magnetic noise from the spin bath and show that the coherence is limited by interactions with non-Si barrier atoms to a few \textmu s in Si/SiGe (for non-purified Ge) and about 100\,\textmu s in Si-MOS. Expressing these numbers alternatively, in Si/SiGe the interactions with Ge dominate below 1000\,ppm of $^{29}$Si content, and, due to low natural concentration of the spinful oxygen isotopes, the interactions with oxygen in Si-MOS become significant only below 1\,ppm of $^{29}$Si content.

cond-mat.mes-hall↗

arXiv2023

Dynamical nuclear spin polarization in a quantum dot with an electron spin driven by electric dipole spin resonance

We analyze the polarization of nuclear spins in a quantum dot induced by a single-electron spin that is electrically driven to perform coherent Rabi oscillations. We derive the associated nuclear-spin polarization rate and analyze its dependence on the accessible control parameters, especially the detuning of the driving frequency from the electron Larmor frequency. The arising nuclear-spin polarization is related to the Hartmann-Hahn effect known from the NMR literature with two important differences. First, in quantum dots one typically uses a micro magnet, leading to a small deflection of the quantization axes of the electron and nuclear spins. Second, the electric driving wiggles the electron with respect to the atomic lattice. The two effects, absent in the traditional Hartmann-Hahn scenario, give rise to two mechanisms of nuclear-spin polarization in gated quantum dots. The arising nuclear-spin polarization is a resonance phenomenon, achieving maximal efficiency at the resonance of the electron Rabi and nuclear Larmor frequency (typically a few or a few tens of MHz). As a function of the driving frequency, the polarization rate can develop sharp peaks and reach large values at them. Since the nuclear polarization is experimentally detected as changes of the electron Larmor frequency, we often convert the former to the latter in our formulas and figures. In these units, the polarization can reach hundreds of MHz/s in GaAs quantum dots and at least tens of kHz/s in Si quantum dots. We analyze possibilities to exploit the resonant polarization effects for achieving large nuclear polarization and for stabilizing the Overhauser field through feedback.

cond-mat.mes-hall↗

arXiv2023

Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits

We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in isotopically purified Si/SiGe quantum dots. At low frequencies (where the noise is strongest), the correlation coefficient reaches 10% for a next-nearest-neighbor qubit-pair separated by 200 nm. Assigning the observed noise to be of electrical origin, a simple theoretical model quantitatively reproduces the measurements and predicts a polynomial decay of correlations with interqubit distance. Our results quantify long-range correlations of noise dephasing quantum-dot spin qubits arranged in arrays, essential for scalability and fault-tolerance of such systems.

cond-mat.mes-hall↗

arXiv2022

Bayesian estimation of correlation functions

We apply Bayesian statistics to the estimation of correlation functions. We give the probability distributions of auto- and cross-correlations as functions of the data. Our procedure uses the measured data optimally and informs about the certainty level of the estimation. Our results apply to general stationary processes and their essence is a non-parametric estimation of spectra. It allows one to better understand the statistical noise fluctuations, assess the correlations between two variables, and postulate parametric models of spectra that can be further tested. We also propose a method to numerically generate correlated noise with a given spectrum.

physics.data-an↗

arXiv2022

Charge-noise induced dephasing in silicon hole-spin qubits

We investigate theoretically charge-noise induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet-spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet-spots is boosted by several orders of magnitude, up to order of milliseconds.

cond-mat.mes-hall↗

arXiv2021

Helical Liquids in Semiconductors

One-dimensional helical liquids can appear at boundaries of certain condensed matter systems. Two prime examples are the edge of a quantum spin Hall insulator and the hinge of a three-dimensional second-order topological insulator. For these materials, the presence of a helical state at the boundary serves as a signature of their nontrivial electronic bulk topology. Additionally, these boundary states are of interest themselves, as a novel class of strongly correlated low-dimensional systems with interesting potential applications. Here, we review existing results on such helical liquids in semiconductors. Our focus is on the theory, though we confront it with existing experiments. We discuss various aspects of the helical liquids, such as their realization, topological protection and stability, or possible experimental characterization. We lay emphasis on the hallmark of these states, being the prediction of a quantized electrical conductance. Since so far reaching a well-quantized conductance has remained challenging experimentally, a large part of the review is a discussion of various backscattering mechanisms which have been invoked to explain this discrepancy. Finally, we include topics related to proximity-induced topological superconductivity in helical states, as an exciting application towards topological quantum computation with the resulting Majorana bound states.

cond-mat.mes-hall↗

arXiv2021

Review of performance metrics of spin qubits in gated semiconducting nanostructures

This Technical Review collects values of selected performance characteristics of semiconductor spin qubits defined in electrically controlled nanostructures. The characteristics are envisioned to serve as a community source for the values of figures of merit with agreed-on definitions allowing the comparison of different spin qubit platforms. We include characteristics on the qubit coherence, speed, fidelity, and the qubit-size of multiqubit devices. The focus is on collecting and curating the values of these characteristics as reported in the literature, rather than on their motivation or significance.

cond-mat.mes-hall↗

arXiv2020

Isotropic and Anisotropic g-factor Corrections in GaAs Quantum Dots

We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength which allows us to extract the g-factor. The measured g-factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g-factor. Because this implies a dependence of the spin splitting on the magnetic field direction, these findings are of significance for spin qubits in GaAs quantum dots.

cond-mat.mes-hall↗

arXiv2020

Optimal frequency estimation and its application to quantum dots

We address the interaction-time optimization for frequency estimation in a two-level system. The goal is to estimate with maximum precision a stochastic perturbation. Our approach is valid for any figure of merit used to define optimality, and is illustrated for the variance and entropy. For the entropy, we clarify the connection to maximum-likelihood estimation. We devise novel estimation protocols with and without feedback. They outperform common protocols given in the literature. We design a probabilistic self-consistent protocol as an optimal estimation without feedback. It can improve current experimental techniques and boost coherence times in quantum computing.

cond-mat.mes-hall↗

arXiv2020

Spin orbit field in a physically defined p type MOS silicon double quantum dot

We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components.

cond-mat.mes-hall↗